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The Global ETD Search service is a free service for researchers
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Showing 31 to 40 of 902 (0.052 seconds)Spelling suggestions: "subject:"amorphous"" "subject:"morphous""
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Sub-Gap absorption spectroscopy and its applications to amorphous semiconductor materials/Akdaş, Deniz. Güneş, Mehmet January 2002 (has links) (PDF)
Thesis (Master)--İzmir Institute of Technology, İzmir, 2002. / Includes bibliographical references (leaves. 98-102).
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| 32 |
Reversible structural relaxation in iron based metallic glassesBrüning, Ralf January 1986 (has links)
No description available.
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| 33 |
Metal Ion Diusion in Thin Film ChalcogenidesZella, Leo W. 30 September 2016 (has links)
No description available.
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| 34 |
Picosecond dynamics of charged carriers in amorphous semiconductors /D'Souza, Arvind Inacib January 1985 (has links)
No description available.
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| 35 |
The effects of extractable aluminum, iron and silicon on strength and bonding of fragipans of Trumbull County, Ohio /Hallmark, Charles Thomas January 1977 (has links)
No description available.
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| 36 |
Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized FilmsPritchett, Merry 05 1900 (has links)
Semiconductor circuitry feature miniaturization continues in response to Moore 's Law pushing the limits of aluminum and forcing the transition to Cu due to its lower resistivity and electromigration. Copper diffuses into silicon dioxide under thermal and electrical stresses, requiring the use of barriers to inhibit diffusion, adding to the insulator thickness and delay time, or replacement of SiO2 with new insulator materials that can inhibit diffusion while enabling Cu wetting. This study proposes modified amorphous silicon carbon hydrogen (a-Si:C:H) films as possible diffusion barriers and replacements for SiO2 between metal levels, interlevel dielectric (ILD), or between metal lines (IMD), based upon the diffusion inhibition of previous a-Si:C:H species expected lower dielectric constants, acceptable thermal conductivity. Vinyltrimethylsilane (VTMS) precursor was condensed on a titanium substrate at 90 K and bombarded with electron beams to induce crosslinking and form polymerized a-Si:C:H films. Modifications of the films with hydroxyl and nitrogen was accomplished by dosing the condensed VTMS with water or ammonia before electron bombardment producing a-Si:C:H/OH and a-Si:C:H/N and a-Si:C:H/OH/N polymerized films in expectation of developing films that would inhibit copper diffusion and promote Cu adherence, wetting, on the film surface. X-ray Photoelectron Spectroscopy was used to characterize Cu metallization of these a-Si:C:H films. XPS revealed substantial Cu wetting of a-Si:C:H/OH and a-Si:C:H/OH/N films and some wetting of a-Si:C:H/N films, and similar Cu diffusion inhibition to 800 K by all of the a-:S:C:H films. These findings suggest the possible use of a-Si:C:H films as ILD and IMD materials, with the possibility of further tailoring a-Si:C:H films to meet future device requirements.
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| 37 |
Charge transport and injection in amorphous organic electronic materialsTse, Shing Chi 01 January 2007 (has links)
No description available.
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| 38 |
The electronic properties of pure and transition metal doped amorphous silicon-dioxide filmsDeLima, Joaquin Joao January 1987 (has links)
No description available.
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| 39 |
A study of simple glassforming aqueous electrolyte solutionsAnsell, Stuart January 1995 (has links)
No description available.
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| 40 |
Spectroscopic investigations of amorphous complex dielectric materialsAnwar, M. January 1989 (has links)
No description available.
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