This work investigates the design, system integration, optimization, and evaluation of amorphous silicon (a-Si:H) active matrix flat panel imagers (AMFPI) for bio-medical applications. Here, two hybrid active pixel sensor (H-APS) designs are introduced that improve the dynamic range while maintaining the desirable attributes of high speed and low noise readout. Also presented is a systematic approach for noise analysis of thin film transistors (TFT) and pixel circuits in which circuit analysis techniques and TFT noise models are combined to evaluate circuit noise performance. We also explore different options of system integration and present measurement results of a high fill-factor (HFF) array with segmented photodiode.

Proteins are commonly found molecules in biological systems: our fingernails, hair, skin, blood, muscle, and eyes are all made of protein. Many diseases simply arise because a protein is not folded properly. Therefore, knowledge of protein structure is considered a prerequisite to understanding protein function and, by extension, a cornerstone for drug design and for the development of therapeutic agents. Protein crystallography is a tool that allows structural biologists to discern protein structures to the highest degree of detail possible in three dimensions. The recording of x-ray diffraction data from the protein crystal is a central part of protein crystallography. As such, an important challenge in protein crystallography research is to design x-ray detectors to accurately determine the structures of proteins. This research presents the design and evaluation of a solid-state large area at panel detector for protein crystallography based on an amorphous selenium (a-Se) x-ray sensitive photoconductor operating in avalanche mode integrated with an amorphous silicon (a-Si:H) charge storage and readout pixel. The advantages of the proposed detector over the existing imaging plate (IP) and charge coupled device (CCD) detectors are large area, high dynamic range coupled to single x-ray detection capability, fast readout, high spatial resolution, and inexpensive manufacturing process. The requirement of high dynamic range is crucial for protein crystallography since both weak and strong diffraction spots need to be imaged. The main disadvantage of a-Si:H thin film transistor (TFT) array is its high electronic noise which prohibits quantum noise limited operation for the weak diffraction spots. To overcome the problem, the x-ray to charge conversion gain of a-Se is increased by using its internal avalanche multiplication gain. Since the detector can be made approximately the same size as the diffraction pattern, it eliminates the need for image demagnification. The readout time of the detector is usually within the ms range, so it is appropriate for crystallographic application. The optimal detector parameters (such as, detector size, pixel size, thickness of a-Se layer), and operating parameters (such as, electric field across the a-Se layer) are determined based on the requirements for protein crystallography. A complete model of detective quantum efficiency (DQE) of the detector is developed to predict and optimize the performance of the detector. The performance of the detector is evaluated in terms of readout time (< 1 s), dynamic range (~10^5), and sensitivity (~ 1 x-ray photon), thus validating the detector's efficacy for protein crystallography. The design of an in-house a-Si:H TFT pixel array for integration with an avalanche a-Se layer is detailed. Results obtained using single pixel are promising and highlight the feasibility of a-Si:H pixels coupled with avalanche a-Se layer for protein crystallography application.

The focus of this thesis is on the optimization and fabrication of p-i-n amorphous silicon (a-Si:H) solar cells both on glass and transparent plastic substrates. These solar cells are specifically fabricated on transparent substrates to facilitate the integration of thin film batteries with these solar cells. To comply with plastic substrates, different silicon layers are optimized at the low processing temperature of 135 C. In the first part of the optimization process, the structural, electronic, and optical properties of boron- and phosphorous-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at the substrate temperature of 135 C are elaborated. Additionally, in this part, the deposition of protocrystalline silicon (pc-Si) films on glass substrates are investigated. In the device integration and fabrication part of this thesis, the optimization process is continued by fabricating single junction devices with different hydrogen dilution ratios for the cell absorber layer. The optimum device performance is achieved with an absorber layer right at the transition from amorphous to microcrystalline silicon. To further improve the performance of the fabricated solar cells, amorphous silicon carbide buffer layers are introduced between the nc-Si p-layer and the undoped pc-Si absorber layer. Single junction p-p'-i-n solar cells are fabricated and characterized both on glass and plastic substrates. Our measurements show conversion efficiencies of 7.0% and 6.07% for the cells fabricated on glass and plastic substrates, respectively. In the last part of this research, the light trapping enhancement in amorphous silicon solar cells using Distributed Bragg Reflectors (DBRs) are experimentally demonstrated. Reflectance characteristics of DBR test structures, consisting of amorphous silicon (a-Si) / amorphous silicon nitride (SiN) film stacks are analysed and compared with those of conventional ZnO/Al back reflectors. DBR optical measurements show that the average total reflectance over the wavelength region of 600-800 nm is improved by 28% for DBR back structures. Accordingly, single junction amorphous silicon solar cells with DBR and Al back reflectors are fabricated both on glass and plastic substrates. Our results show that the short-circuit current density and consequently the conversion efficiency is enhanced by 10% for the cells fabricated on textured transparent conductive oxide substrates. In addition, these DBR back structures are designed and employed to improve the efficiency of semi-transparent solar cells. In this application, the optimized DBR structures are designed to be optically transparent for the part of the visible range and highly reflective for the red and infra-red part of the spectrum. Using these DBR structures, the efficiency of the optimum semi-transparent solar cell is enhanced by 5%.

Selectively-transparent and conducting photonic crystals (STCPCs) made of alternating layers of sputtered indium-tin oxide (ITO) and spin-coated silica (SiO2) nanoparticle films have potential applications in micromorph solar cells and building integrated photovoltaics (BIPVs). In this work, theoretical calculations have been performed to show performance enhancement of the micromorph solar cell upon integration of the STCPC an intermediate reflector. Thin semi-transparent hydrogenated amorphous silicon (a-Si:H) solar cells with STCPC rear contacts are demonstrated in proof-of-concept devices. A 10% efficiency increase in a 135nm thick a-Si:H cell on an STCPC reflector with Bragg peak at 620nm was observed, while the transmitted solar irradiance and illuminance are determined to be 295W/m2 and 3480 lux, respectively. The STCPC with proper Bragg peak positioning can boost the a-Si:H cell performance while transmitting photons that can be used as heat and lighting sources in building integrated photovoltaic applications.

Driven by the limitations of solar-optimized roof space and International Energy Association (IEA) Task 35, there is a renewed interest in photovoltaic solar thermal (PVT) hybrid systems. Current PVT systems focus on cooling the solar photovoltaic (PV) cells to improve the electrical performance. This however, causes the thermal component (T) to underperform. An exergetic study was completed comparing a PVT, PV + T and a PV only system in Detroit, Denver and Phoenix. It was found that the PVT system outperformed the PV + T system by 72% for each location and by 8, 8.6 and 9.9% for Detroit, Denver and Phoenix when compared to the PV only system. To further improve the PVT system, using hydrogenated amorphous silicon (a-Si:H) PV as the absorber layer of the solar thermal device was explored. The temperature coefficient and annealing properties of a-Si:H allow the thermal component to run more efficiently, while enabling the a-Si:H i-layers to be thicker resulting in more electricity production. It was found that running i-layer thicker cells (630nm and 840nm) stabilized at higher efficiencies at 90°C (potential PVT operating temperatures) than the thinner cell (420nm) by 2% and 0.5% respectively. In addition, spike annealing, which is a new concept of stagnating a PVT system to allow for the a-Si:H PV to anneal and return it to its original efficiencies was also investigated. It was found that over the lifetime of the system with the spike annealing occurring once a day 10.6% more electricity was produced than a system without stagnation. / Thesis (Master, Mechanical and Materials Engineering) -- Queen's University, 2011-11-14 11:09:16.727

Nanowires are high aspect ratio nanostructures with structural diameters on the order of nanometers to hundreds of nanometers. In this work, the optical properties of highly crystalline silicon nanowires grown by the Vapor-Liquid-Solid (VLS) method surrounded by a thin silicon shell are investigated for thin film solar cell applications. Crystalline core nanowires were surrounded by a conformal amorphous silicon shell and exhibited extremely high absorption of 95% at short wavelengths (??<550nm) and very low absorption of <2% at long wavelengths (??>780nm). Nanowires were disordered with average lengths ranging from 1.3 to 2.3 ??m. The absorption increased at longer wavelengths as a function of amorphous shell radial thickness, significantly higher than the absorption of a reference planar a-Si thin film. In addition, a new method to grow epitaxial silicon at low growth temperatures on glass substrates is demonstrated. Highly crystalline silicon nanowires with an average length of 800 nm were used as the seed crystal to grow an epitaxial silicon shell around, using a low temperature process. The nanowire core was grown at 400??C, and the shell was grown at about 150??C. Such epitaxial grown nanowire shells could be used as a building block for nanotechnology applications in which epitaxial silicon is required over large-area substrates such as glass. Furthermore, the epitaxial silicon shell nanowires exhibited absorption > 90% up to a wavelength of 600 nm, which was significantly higher than that of a planar 1 ??m nanocrystalline silicon film. The high absorption exhibited by nanowires with both amorphous and crystalline silicon shells makes them promising for use in photovoltaic and photodetector applications. Silicon nanowires were incorporated into thin film silicon n-i-p solar cells in two configurations: as a nanostructured back reflector, and in core-shell nanowire solar cells. First, domed-shaped nanostructures were fabricated by coating an array of silicon nanowires with a thick layer of amorphous silicon. After the nanostructures were coated with Ag and ZnO:Al, they were used as the backreflector in an n-i-p amorphous silicon solar cell. The nanostructured backreflector improved light scattering within the solar cell, leading to a short circuit current of 14.8mA/cm2, a 13% improvement over that of the planar device, which had a Jsc=13.1 mA/cm2. The overall conversion efficiency of nanostructured backreflector device was ?? = 8.87%, a strong improvement over that of the planar device (?? = 7.47%). Silicon nanowires were also incorporated into core-shell nanowire solar cells. The first device architecture investigated consisted of nanowires incorporated as the intrinsic absorption layer between a planar n+ layer and conformal p+ layer. However, the fabricated devices exhibited very low collection efficiencies of < 2% due to the presence of impurities incorporated by the catalyst used during nanowire growth. As a result, the device architecture was modified such that the nanowires provided high aspect ratio structure to enhance absorption in a shell material, but the nanowires themselves were not used as an active device component. Nanowire core-amorphous silicon shell solar cells, on average 525 nm long and about 350nm in total diameter, exhibited an impressive low total reflectance of <3% in the wavelength interval of 410 nm < ?? < 640nm and exceeded 10% only for ??>700 nm. As a result, the core-shell nanowire devices exhibited enhancement in quantum efficiency at low wavelengths, ?? < 500nm and high wavelengths, ?? > 600nm as compared to a planar device. The resulting short circuit current was 14.1 mA/cm2 compared to 12.3 mA/cm2 for the planar device, an improvement of ~15%. Nanowire core- nanocrystalline silicon shell solar cells were also fabricated using the same device architecture. Core-shell nanowires with an average length of 800 nm showed significant enhancement in quantum efficiency over all wavelengths as compared to a 1 ??m thick planar solar cell. The core-shell nanowire device had a short-circuit current of 16.2 mA/cm2 , a ~25% improvement over that of the planar thin film solar cell (Jsc=13.0 mA/cm2). Core-shell nanowire devices did, however, have lower open circuit voltage compared to the planar device. Non-conformal coverage was found to be a limiting factor in device performance, but further improvements can be expected with optimization of the n-i-p deposition conditions and nanowire density.

The most promising technology for radiography is active matrix flat panel imaging systems (AMFPI). However, AMFPI systems are relatively expensive in comparison with conventional computed radiography (CR) systems. Therefore for general radiography applications low cost systems are needed, especially in hospitals and healthcare systems of the developing countries. The focus of this research is the fabrication and characterization of a low cost amorphous silicon metal-semiconductor-metal photodetector as a photosensitive element in a AMFPI systems. Metal-Semiconductor-Metal photodetectors (MSM-PD) are attractive as sensors due to their ease of fabrication and compatibility with thin film transistor fabrication process primarily because there is no p+ doped layer in comparison with conventional p-i-n photodiodes. We have reported low dark current lateral a-Si MSM-PD (lower than 20pA/mm2 ) with responsivity of 280mA/W and EQE of 65 percent to green light ( l = 525nm). These improvement are achieved by introduction of a PI blocking layer and operating the device at high electric field (15 V/µm). This new structure eliminates the need of p+ and n+ layers which makes this structure fully compatible with the a-Si:H TFT fabrication process and consequently a low cost flat panel imager. Further, in this study we have investigated the effect of the spacing and width of the comb structure in the proposed lateral a-Si MSM-PD to determine the best configuration. Moreover, a-Si MSM-PD with PI blocking layer shows a linear behaviour to the photon flux in the wide range of 200nW/cm2 - 300µW/cm2 intensity of the incoming light. In comparison to vertical p-i-n structures, the reported MSM lateral device shows gains in terms of dynamic range, ease of fabrication (no p+ layer) without any deterioration in EQE and responsivity. This results are promising and encourage the development of a-Si lateral MSM-PD for indirect conversion large area medical imaging applications and especially low cost flat.

The focus of this thesis is on the optimization and fabrication of p-i-n amorphous silicon (a-Si:H) solar cells both on glass and transparent plastic substrates. These solar cells are specifically fabricated on transparent substrates to facilitate the integration of thin film batteries with these solar cells. To comply with plastic substrates, different silicon layers are optimized at the low processing temperature of 135 C. In the first part of the optimization process, the structural, electronic, and optical properties of boron- and phosphorous-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at the substrate temperature of 135 C are elaborated. Additionally, in this part, the deposition of protocrystalline silicon (pc-Si) films on glass substrates are investigated. In the device integration and fabrication part of this thesis, the optimization process is continued by fabricating single junction devices with different hydrogen dilution ratios for the cell absorber layer. The optimum device performance is achieved with an absorber layer right at the transition from amorphous to microcrystalline silicon. To further improve the performance of the fabricated solar cells, amorphous silicon carbide buffer layers are introduced between the nc-Si p-layer and the undoped pc-Si absorber layer. Single junction p-p'-i-n solar cells are fabricated and characterized both on glass and plastic substrates. Our measurements show conversion efficiencies of 7.0% and 6.07% for the cells fabricated on glass and plastic substrates, respectively. In the last part of this research, the light trapping enhancement in amorphous silicon solar cells using Distributed Bragg Reflectors (DBRs) are experimentally demonstrated. Reflectance characteristics of DBR test structures, consisting of amorphous silicon (a-Si) / amorphous silicon nitride (SiN) film stacks are analysed and compared with those of conventional ZnO/Al back reflectors. DBR optical measurements show that the average total reflectance over the wavelength region of 600-800 nm is improved by 28% for DBR back structures. Accordingly, single junction amorphous silicon solar cells with DBR and Al back reflectors are fabricated both on glass and plastic substrates. Our results show that the short-circuit current density and consequently the conversion efficiency is enhanced by 10% for the cells fabricated on textured transparent conductive oxide substrates. In addition, these DBR back structures are designed and employed to improve the efficiency of semi-transparent solar cells. In this application, the optimized DBR structures are designed to be optically transparent for the part of the visible range and highly reflective for the red and infra-red part of the spectrum. Using these DBR structures, the efficiency of the optimum semi-transparent solar cell is enhanced by 5%.

Silicon based hydrogenated amorphous semiconducting (intrinsic and n/p doped a-Si:H and a-Si1-xCx:H) thin films have been deposited by plasma enhanced chemical vapor deposition (PECVD) system. In order to analyze the optical response of these amorphous films, intrinsic optical absorption mechanisms have resumed and spectral variations of absorption coefficient &amp / #61537 / (E) are derived. The exponential variation of absorption coefficient for energies below the band edge is discussed in the frame of randomly distributed square well like potential fluctuations of localized states. Urbach constant EU and the slope B are deduced as disorder parameters. Both intensity sensitive transmittance and reflectance, and amplitude/phase sensitive ellipsometric techniques for multilayer thin films are theoretically and practically treated. Various methodologies are developed for the determination of thickness, refractive index and absorption coefficient of the films. A reflectance unit is adapted to the spectrometer and all the measuring instruments are computerized and relevant software packets have been developed. IR spectroscopy has been used for determination of mainly hydrogen concentrations and bonding properties. Establishing the production-characterization-improved growth conditions cycle successfully, the following results are obtained: (a) determination of lateral inhomogeneity of films along the radial direction of the plasma reactor, (b) determination of vertical inhomogeneity due to both substrate and air ambient, (c) perfect adjustment of refractive index and band gap of a-Si1-xCx:H films by changing carbon content of the films, (d) effect of plasma power density on both growth and carbon content.

The fundamentals of the ellipsometry are reviewed in order to point out the strengths and weaknesses of the ellipsometric measurements. The effects of the surface conditions (such as degree of cleanliness, contaminated thin layer, roughness etc&hellip / ) on the ellipsometric variables are experimentally studied / the optimum procedures have been determined. Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) thin films are produced by plasma enhanced chemical vapor deposition (PECVD) technique with a circular reactor, in a way that RF power and carbon contents are taken as variables. These samples are analyzed using multiple angle of incidence ellipsometer and uv-vis spectrometer. These measurements have inhomogeneities in optical constants, such as thicknesses, refractive indices and optical energy gaps along the radial direction of the reactor electrode for different power and carbon contents.