The development of metal-oxide-semiconductor field effect transistor (MOSFET) technology relies on new channel materials with higher carrier mobilities that allow faster switching but at lower voltages. III-V semiconductors are suitable for channel materials in n-type MOSFETs due to their higher electron mobility. However, the interface between the gate dielectric and the III-V surface shows defects that detriment the electrical performance of the transistor. These defects are attributed to interfacial oxides that create energy states in the band gap. Therefore, III-V oxides must be removed and the surface must be protected from reoxidation for the deposition of other functional layers. In this work, oxide etching and passivation of III-V semiconductors were studied to understand the oxide etching mechanism and to develop passivation techniques that allow the integration of these materials in device manufacturing. The etching of GaAs(100) was studied using aqueous HCl and H₂O₂ mixtures with and without the addition of alpha-hydroxy acids. Oxide etching depends on the strength of the acid. Without the addition H₂O₂, acetic, glycolic, tartaric and hydrochloric acids (pKₐ lower than 5) are able to remove oxides. Upon the addition of H₂O₂, only the stronger acids (glycolic, tartaric and hydrochloric) with a pKₐ lower than 4 are able to compete with H₂O₂ and etch the oxides. Oxide removal leaves an As-rich surface, and in the case of HCl, etching leaves a surface terminated with As-Cl species. As-As dimers are formed when oxides are etched with HCl and organic acids. After oxide removal with HF or HCl, the fresh GaAs and InP surfaces were passivated with a series of alkanethiols (C(n)H(2n+1)SH) to assess their effectiveness in protecting the substrate from reoxidation. Longer C chains provided increased protectiong due to their increased chain-chain interactions that allow them to form a denser and well-ordered monolayer. The surface is chemically passivated through S-X (where X = As, Ga for GaAs, and In for InP) bonding between the alkanethiolate layer and the surface. A layer formed by 1-eicosanethiol protected GaAs for 30 min, but prevented reoxidation of InP for at least 5 hours. Since the thickness of the alkanethiol layer is the same, the difference in protection is a result of the density of the layer and S bonding with the substrate.

published_or_final_version / Physics / Doctoral / Doctor of Philosophy

published_or_final_version / abstract / toc / Physics / Master / Master of Philosophy

The concentration of tin and palladium in catalysts used in electroless copper plating have been determined by Rutherford backscattering spectrometry with high energy (2-5) MeV ⁴He⁺. The tin:palladium ratio in the catalyst decreases when exposed to an alkaline solution. X-ray photoelectron spectroscopy has confirmed this result and has shown the palladium in the catalyst is present as palladium metal and the tin is present, probably as an oxidized species, to a depth of about 30 Å. Catalysts for the electroless plating of copper are obtained by the reaction of Pd(II) and Sn(II). The extent of the reaction and the concentrations of the reaction products depend on the solution conditions. Conflicting results obtained in previous investigations of tin-palladium catalysts can be explained on this basis. Single crystals of gallium arsenide (GaAs(100)) were found to dissolve in synthetic lung fluid (Gamble solution). The concentrations of arsenic and gallium in the Gamble solution as well as the arsenic:gallium ratio on the GaAs surface increased continuously as the time of exposure to the Gamble solution increased. X-ray photoelectron spectroscopic studies of the gallium arsenide surface showed that arsenic migrated to the surface and it was oxidized to a species resembling As₂O₃ and finally solubilized by the Gamble solution. The solubility of gallium was governed primarily by the formation of stable complexes with the citrate and phosphate ions in the Gamble solution. Zinc that was present in the single crystals of gallium arsenide also migrated to the surface.

The high balance-of-system costs of photovoltaic installations indicate that reductions in absorber cost alone are likely insufficient for photovoltaic electricity to reach grid parity unless energy conversion efficiency is also increased. Technologies which both yield high-efficiency cells (>25%) and maintain low costs are needed. GaAs and related III-V semiconductors are used in the highest-efficiency single- and multi-junction photovoltaics, but the technology is too expensive for non-concentrated terrestrial applications. This is due in part to the limited scalability of traditional syntheses, which rely on expensive reactors and employ toxic and pyrophoric gas-phase precursors such as arsine and trimethyl gallium. This work describes GaAs films made by close-spaced vapor transport, a potentially scalable technique which is carried out at atmospheric pressure and requires only bulk GaAs, water vapor, and a temperature gradient to deposit crystalline films with similar electronic properties to GaAs prepared using traditional syntheses. Although close-spaced vapor transport of GaAs was first developed in 1963, there were few examples of GaAs photovoltaic devices made using this method in the literature at the onset of this project. Furthermore, it was unclear whether close-spaced vapor transport could produce GaAs films appropriate for use in photovoltaics. The goal of this project was to create and study GaAs devices made using close-spaced vapor transport and determine whether the technique could be used for production of grid-connected GaAs photovoltaics. In Chapter I the design of the vapor transport reactor, the chemistry of crystal growth, and optoelectronic characterization techniques are discussed. Chapter II focuses on compositional measurements, doping, and improved electronic quality in CSVT GaAs. Chapter III describes several aspects of the interplay between structure and electronic properties of photoelectrochemical devices. Chapter IV addresses heteroepitaxial growth of GaAs on "virtual" Ge-on-Si substrates. This is a topic of importance for the broader III-V community as well as the photovoltaic community, as Si is the substrate of choice in many areas of industry. This dissertation includes unpublished and previously published co-authored material.

Thesis (Ph.D.)--Chinese University of Hong Kong ,2001. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

Hui Yat Wai. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1993. / Includes bibliographical references (leaves 106-108). / Acknowledgments / Abstract / Chapter 1. --- Introduction --- p.1 / Chapter 2. --- Theory / Chapter 2.1 --- Optical Waveguide --- p.4 / Chapter 2.1.1 --- Optical Waveguide Classification / Chapter 2.1.2 --- Theoretical Analysis of 2-dimensional Step Index Waveguides / Chapter 2.2 --- Optical Waveguides Measurement --- p.18 / Chapter 2.2.1 --- Refractive Index Measurement / Chapter 2.2.2 --- Loss Measurement / Chapter 2.3 --- Ion Implantation and Annealing --- p.36 / Chapter 2.4 --- Refractive Index Change --- p.40 / Chapter 3. --- Equipments and Their Experimental Setup / Chapter 3.1 --- Light Source-Laser Diode --- p.42 / Chapter 3.2 --- Ellipsometry Measurement System --- p.45 / Chapter 3.2.1 --- Ellipsometry Measurement System and its Existing Problems / Chapter 3.2.2 --- Improvement of the Original System / Chapter 3.2.3 --- System Calibration / Chapter 3.3 --- Reflectance Measurement System --- p.51 / Chapter 3.3.1 --- System Design and Setup / Chapter 3.3.2 --- System Calibration / Chapter 3.4 --- End-Coupling Measurement System --- p.56 / Chapter 3.4.1 --- System Setup / Chapter 3.4.2 --- System Calibration / Chapter 4. --- Experiment / Chapter 4.1 --- Samples Preparation --- p.77 / Chapter 4.2 --- Refractive Index Measurement by Ellipsometer --- p.80 / Chapter 4.3 --- Refractive Index Measurement by Reflectance --- p.84 / Chapter 4.4 --- Waveguide Measurement --- p.88 / Chapter 4.4.1 --- Fiber-Waveguide Coupling / Chapter 4.4.2 --- Lens-Waveguide Coupling / Chapter 5. --- Results and Discussion / Chapter 5.1 --- Refractive Index Change and Waveguide Formation --- p.94 / Chapter 5.2 --- Mechanism of Refractive Index Change --- p.100 / Chapter 6. --- Conclusion --- p.103 / Chapter 7. --- Improvement and Extension --- p.105 / Reference --- p.106 / Appendices / Chapter A. --- Thick.m --- p.VI / Chapter B. --- Distrib.m --- p.IX

by Mok Wing Keung. / Parallel title in Chinese characters. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1992. / Includes bibliographical references (leaves 149-154). / Acknowledgement --- p.i / Abstract --- p.ii / Table Of Contents --- p.iii / List Of Figures --- p.v / List Of Tables --- p.ix / List Of Plates --- p.x / Chapter Chapter One --- Introduction / Chapter 1.1 --- General introduction --- p.1 / Chapter 1.2 --- Gallium arsenide --- p.4 / Chapter 1.2.1 --- Basic facts --- p.4 / Chapter 1.2.2 --- Band structure --- p.6 / Chapter 1.2.3 --- Production of GaAs --- p.9 / Chapter 1.3 --- Ion implantation --- p.11 / Chapter 1.3.1 --- Principle of ion implantation --- p.11 / Chapter 1.3.2 --- Basic facts --- p.17 / Chapter 1.3.3 --- Radiation damage and annealing --- p.21 / Chapter 1.4 --- Optical measurements --- p.27 / Chapter 1.4.1 --- Basic facts --- p.27 / Chapter 1.4.2 --- Optical reflectance --- p.29 / Chapter 1.4.3 --- Oxide overlayer --- p.39 / Chapter Chapter Two --- Experimental / Chapter 2.1 --- Sample preparation --- p.42 / Chapter 2.2 --- Ion implantation --- p.46 / Chapter 2.2.1 --- Implantation parameters --- p.46 / Chapter 2.2.2 --- Computer modeling of implantation profiles --- p.48 / Chapter 2.3 --- Annealing --- p.57 / Chapter 2.3.1 --- Conventional annealing --- p.57 / Chapter 2.3.2 --- Rapid thermal annealing --- p.61 / Chapter 2.4 --- Optical reflectance measurement --- p.69 / Chapter 2.4.1 --- Principle of measurement --- p.69 / Chapter 2.4.1.1 --- Relative reflectance measurement --- p.71 / Chapter 2.4.1.2 --- Absolute reflectance measurement --- p.79 / Chapter 2.4.2 --- Error estimation and data reduction --- p.82 / Chapter 2.4.2.1 --- Error estimation --- p.84 / Chapter 2.4.2.2 --- Data reduction --- p.86 / Chapter 2.5 --- Optical microscopy and photoluminescence --- p.90 / Chapter Chapter Three --- Results And Discussion / Chapter 3.1 --- Surface morphology --- p.93 / Chapter 3.2 --- Optical reflectance measurement --- p.101 / Chapter 3.2.1 --- Reflectance spectrum --- p.101 / Chapter 3.2.1.1 --- Reference mirror --- p.101 / Chapter 3.2.1.2 --- Crystalline GaAs --- p.104 / Chapter 3.2.1.3 --- Implanted GaAs before annealing --- p.108 / Chapter 3.2.1.4 --- Conventional annealed GaAs --- p.115 / Chapter 3.2.1.5 --- Rapid thermal annealed GaAs (proximity) --- p.120 / Chapter 3.2.2 --- Extraction of optical constants --- p.128 / Chapter 3.2.2.1 --- Oxide overlayer --- p.128 / Chapter 3.2.2.2 --- Dielectric function --- p.132 / Chapter 3.3 --- Photoluminescence results --- p.143 / Chapter Chapter Four --- Conclusions And Suggestions For Further Work --- p.147 / References --- p.149

by Choi Kup Sze. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1994. / Includes bibliographical references. / Acknowledgement / Abstract / Chapter 1. --- Introduction --- p.1-1 / Chapter 1.1 --- Introduction --- p.1-1 / Chapter 1.2 --- References --- p.1-6 / Chapter 2. --- Theory of Optical Waveguides --- p.2-1 / Chapter 2.1 --- Theory of Planar Slab Waveguides --- p.2-2 / Chapter 2.2 --- Theory of Channel Dielectric Waveguides --- p.2-13 / Chapter 2.2.1 --- Marcatili's Method --- p.2-13 / Chapter 2.2.2 --- Effective Index Method --- p.2-20 / Chapter 2.3 --- References --- p.2-24 / Chapter 3. --- A Numerical Method for Optical Waveguides --- p.3-1 / Chapter 3.1 --- Introduction --- p.3-1 / Chapter 3.2 --- two-dimensional Fourier Series Expansion Method --- p.3-2 / Chapter 3.3 --- References --- p.3-13 / Chapter 4. --- Theory of Directional Couplers --- p.4-1 / Chapter 4.1 --- Dual-Channel Coupler --- p.4-1 / Chapter 4.2 --- Multi-channel Directional Coupler --- p.4-8 / Chapter 4.3 --- References --- p.4-9 / Chapter 5. --- Waveguide Formation by Ion Implantation --- p.5-1 / Chapter 5.1 --- Introduction --- p.5-1 / Chapter 5.2 --- Physics of Ion Implantation --- p.5-3 / Chapter 5.3 --- Lattice Damage and Annealing --- p.5-5 / Chapter 5.3.1 --- Lattice Damage --- p.5-5 / Chapter 5.3.2 --- Annealing --- p.5-6 / Chapter 5.4 --- Index Change due to Implantation --- p.5-8 / Chapter 5.5 --- Waveguide Processing Techniques --- p.5-10 / Chapter 5.5.1 --- Photolithography --- p.5-10 / Chapter 5.5.2 --- Processing Techniques --- p.5-11 / Chapter 5.6 --- References --- p.5-13 / Chapter 6. --- Optical Loss in Waveguides --- p.6-1 / Chapter 6.1 --- Loss Mechanisms in Optical Waveguides --- p.6-1 / Chapter 6.2 --- Principle of Propagation Loss Measurement --- p.6-4 / Chapter 6.2.1 --- Cut-back Method --- p.6-5 / Chapter 6.2.2 --- Scattering Light Method --- p.6-7 / Chapter 6.2.3 --- Fabry-Perot Interference Technique --- p.6-9 / Chapter 6.3 --- References --- p.6-16 / Chapter 7. --- Fabrication and Measurement of Optical Waveguides --- p.7-1 / Chapter 7.1 --- Fabrication of Optical Waveguides --- p.7-1 / Chapter 7.1.1 --- Fabrication of waveguides in GaAs by MeV oxygen ion implantation --- p.7-1 / Chapter 7.1.2 --- Waveguide End Facet Preparation --- p.7-4 / Chapter 7.2 --- Measurement of Optical Waveguides --- p.7-7 / Chapter 7.2.1 --- Laser Sources --- p.7-7 / Chapter 7.2.2 --- Guided Wave Excitation --- p.7-10 / Chapter 7.2.3 --- Intensity Profile Measurement --- p.7-17 / Chapter 7.2.4 --- Coupling Coefficient Measurement --- p.7-20 / Chapter 7.2.5 --- Propagation Loss Measurement --- p.7-25 / Chapter 7.3 --- References --- p.7-34 / Chapter 8. --- Results and Discussions --- p.8-1 / Chapter 8.1 --- Near Field Pattern Measurement --- p.8-1 / Chapter 8.2 --- Discussion on the Index Change of the Implanted GaAs --- p.8-5 / Chapter 8.3 --- Propagation Loss Measurement --- p.8-8 / Chapter 8.4 --- Observation of Optical Coupling in Directional Coupler --- p.8-14 / Chapter 8.5 --- References --- p.8-19 / Chapter 9. --- Conclusion --- p.9-1 / Chapter 10. --- Improvement and Extension --- p.10-1 / Appendix 1 Evaluation of the product〈n2 φuvφu'v'〉 --- p.A1-1 / Appendix 2 Transmission of Lossy Fabry-Perot Cavity --- p.A2-1 / Appendix 3 Effective Index versus Index Difference --- p.A3-1 / Appendix 4 Effect of Temperature on the Transmission of a Fabry-Perot Cavity --- p.A4-1 / Appendix 5 Evaluation of An from the Near Field Pattern --- p.A5-1

by Clive Hau Ming Shiu. / On t.p., "x" and "1-x" are subscript. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1994. / Includes bibliographical references (leaves [126]-[130]). / ACKNOWLEDGEMENT --- p.i / ABSTRACT --- p.ii / TABLE OF CONTENTS --- p.iii / Chapter Chapter 1 --- INTRODUCTION --- p.1 / Chapter Chapter 2 --- THEORY --- p.3 / Chapter 2.1 --- Fundamentals of GaAs and AlGaAs --- p.3 / Chapter 2.1.1 --- Crystal structure and properties of GaAs --- p.4 / Chapter 2.1.2 --- General properties of GaAs at 300K --- p.5 / Chapter 2.1.3 --- Temperature dependence of bandgap for GaAs --- p.6 / Chapter 2.1.4 --- Dopants of GaAs --- p.7 / Chapter 2.1.5 --- Properties of AlGaAs --- p.8 / Chapter 2.2 --- Phase Equilibrium of GaAs and AlGaAs --- p.10 / Chapter 2.2.1 --- Phase diagram of Ga-As binary system --- p.11 / Chapter 2.2.2 --- Phase diagram of Al-Ga-As ternary system --- p.13 / Chapter 2.3 --- Principle of LPE growth --- p.17 / Chapter 2.3.1 --- General concept of liquid phase epitaxy --- p.17 / Chapter 2.3.2 --- Fundamental methods of LPE growth --- p.19 / Chapter 2.4 --- Dopants in GaAs and AlGaAs system --- p.21 / Chapter 2.4.1 --- Common dopants in GaAs --- p.22 / Chapter 2.4.2 --- Tellurium in GaAs --- p.23 / Chapter 2.4.3 --- Silicon in GaAs --- p.24 / Chapter 2.4.4 --- Tellurium and Tin in AlGaAs --- p.26 / Chapter Chapter 3 --- LPE SYSTEM FOR GaAs AND AlGaAs --- p.28 / Chapter 3.1 --- Basic requirements for horizontal sliding LPE system --- p.30 / Chapter 3.2 --- Cleaning process of the LPE system --- p.37 / Chapter 3.2.1 --- Cleaning procedures of the quartz parts --- p.37 / Chapter 3.2.2 --- Cleaning procedures of the stainless steel tubing --- p.38 / Chapter 3.2.3 --- Cleaning procedures of the graphite boat --- p.39 / Chapter 3.3 --- Final examination for LPE growth --- p.41 / Chapter 3.3.1 --- Examining the sealing of the system --- p.41 / Chapter 3.3.2 --- Examining the palladium hydrogen purifier --- p.41 / Chapter 3.3.2.1 --- Measuring the dew point --- p.41 / Chapter 3.3.2.2 --- Measuring the content of oxygen and nitrogen --- p.42 / Chapter 3.3.3 --- Adjusting and measuring the isothermal zone in the fumace --- p.42 / Chapter 3.3.4 --- Measuring of background impurity --- p.43 / Chapter 3.3.5 --- Inspection of the operating chamber --- p.44 / Chapter Chapter 4 --- EXPERIMENTALS --- p.45 / Chapter 4.1 --- Determination of GaAs and AlGaAs content in the source melt --- p.45 / Chapter 4.2 --- Calculation of GaAs and AlGaAs content in the source melt --- p.45 / Chapter 4.3 --- Experimental determination of source melt composition --- p.48 / Chapter 4.4 --- LPE growth method --- p.49 / Chapter 4.5 --- Thickness control of LPE epilayers --- p.49 / Chapter 4.6 --- Experimental procedures --- p.50 / Chapter Chapter 5 --- RESULTS AND DISCUSSIONS --- p.63 / Chapter 5.1 --- Growth condition studies of GaAs --- p.63 / Chapter 5.1.1 --- Experimental --- p.63 / Chapter 5.1.2 --- Phase equilibrium of GaAs in the range of 780 to 840 °C --- p.63 / Chapter 5.1.3 --- Results of undoped GaAs epilayers --- p.67 / Chapter 5.1.4 --- Results of Si doped GaAs epilayers --- p.72 / Chapter 5.2 --- Growth condition studies of AlxGa1-xAs for x=0.1 to 09 --- p.73 / Chapter 5.2.1 --- Phase equilibrium of AlxGa1-xAs for x=0.1 to 09 --- p.73 / Chapter 5.2.2 --- Relation between saturation of solution and he flatness of interface between epilayer and substrate --- p.79 / Chapter 5.2.3 --- Determination of composition x in AlxGa1-xAs --- p.82 / Chapter 5.2.4 --- Relation between epilayer thickness and x in AlxGa1-xAs --- p.84 / Chapter 5.3 --- High AlxGa1-xAs with x ´ 0.9 ° at 780 °C --- p.87 / Chapter 5.3.1 --- Deposition rate of high AlxGa1-xAs epilayer versus cooling rate --- p.87 / Chapter 5.3.2 --- Thickness profiles of epilayers versus cooling rate --- p.89 / Chapter 5.3.3 --- Spectroscopic refractive index of high AlxGa1-xAs in the visible light spectrum --- p.94 / Chapter 5.3.4 --- Rocking curves of high AlxGa1-xAs --- p.96 / Chapter 5.4 --- Tellurium doped AlxGa1-xAs with x ranging from 0.1 to 09 --- p.98 / Chapter 5.4.1 --- Carrier concentration versus composition x in AlxGa1-xAs --- p.98 / Chapter 5.4.2 --- Carrier concentration of Al0.3Ga0.7As versus Te mole fraction --- p.100 / Chapter 5.4.3 --- Donor activation energy of Te Versus x in AlxGa1-xAs --- p.102 / Chapter 5.4.4 --- Refractive index of Te doped AlxGa1-xAs at 300K --- p.105 / Chapter 5.4.5 --- Dependence of solubility upon Te doping level --- p.106 / Chapter 5.5 --- Heavily tellurium doped Al0.3Ga0.7As --- p.107 / Chapter 5.5.1 --- Diffractometry study of heavily Te doped Al0.3Ga0.7As --- p.108 / Chapter 5.5.2 --- Morphological studies and interface studies of heavily Te doped Al0.3Ga0.7As --- p.112 / Chapter Chapter 6 --- CONCLUSION --- p.119 / APPENDIX Photoluminance Analysis at room temperature / REFERENCE