In this work, new reconstruction and analysis methods were developed for 3D field ion microscopy (FIM) data, motivated by the goal of atomic scale characterisation of radiation damage for fusion applications. A comparative FIM/ atom probe tomography (APT) study of radiation damage in self-implanted tungsten revealed FIM advantages in atomistic crystallographic characterisation, able to identify dislocations, large vacancy clusters, and single vacancies. While the latter is beyond the detection capabilities of APT, larger damage features were observed indirectly in APT data via trajectory aberrations and solute segregation. An automated 3DFIM reconstruction approach was developed to maintain reliable, atomistic, 3D insights into the atomic arrangements and vacancies distribution in ion-implanted tungsten. The new method was utilized for the automated ‘atom-by-atom' reconstruction of thousands of tungsten atoms yielding highly accurate reconstructions of atomically resolved poles but also applied to larger microstructural features such as carbides and a grain boundary, extending across larger portions of the sample. Additional tools were developed to overcome reconstruction challenges arising from the presence of crystal defects and the intrinsic distortion of FIM data. Those were employed for the automated 3D mapping of vacancies in ion-implanted tungsten, analysing their distribution in a volume extending across 50nm into the depth of the sample. The new FIM reconstruction also opened the door for more advanced analyses on FIM data. It was applied to the preliminary studies of the distortion of the reconstructed planes, found to depend on crystallographic orientation, with an increased variance in atomic positions measured in a radial direction to the centre of the poles. Additional analyses followed the subtle displacements in atomic coordinates on consecutive FIM images, to find them affected by the evaporation of atoms from the same plane. The displacements were found to increase with size as the distance to the evaporated atom decreased, and are likely to be the result of a convolution between image gas effects, surface atoms relaxation, and charge re-distribution. These measurements show potential to probe the dynamic nature of the FIM experiment and possibly resolve contributions from the different processes effecting the final image. Finally, APT characterisation was performed on bulk and pre-sharpened needles to determine the effect of sample's geometry on the resulting implantation profiles, and the extent to which pre-sharpened needles could be employed in radiation damage studies. While the ions depth profiles in needles were not found within a good match to SRIM simulations, the damage profiles exhibited closer agreement. Further, the concentration of implanted ions in bulk samples was found significantly higher than in the respective needle implanted samples, with excessive loss found for the light ion implantation.

High entropy alloys (HEAs) is a concept wherein alloys are constructed with five or more elements mixed in equal proportions; these are also known as multi-principle elements (MPEs) or complex concentrated alloys (CCAs). This PhD thesis dissertation presents research conducted to develop precipitation-hardenable high entropy alloys using a much-studied fcc-based equi-atomic quaternary alloy (CoCrFeNi). Minor additions of aluminium make the alloy amenable for precipitating ordered intermetallic phases in an fcc matrix. Aluminum also affects grain growth kinetics and Hall-Petch hardenability. The use of a combinatorial approach for assessing composition-microstructure-property relationships in high entropy alloys, or more broadly in complex concentrated alloys; using laser deposited compositionally graded AlxCrCuFeNi2 (0 < x < 1.5) complex concentrated alloys as a candidate system. The composition gradient has been achieved from CrCuFeNi2 to Al1.5CrCuFeNi2 over a length of ~25 mm, deposited using the laser engineered net shaping process from a blend of elemental powders. With increasing Al content, there was a gradual change from an fcc-based microstructure (including the ordered L12 phase) to a bcc-based microstructure (including the ordered B2 phase), accompanied with a progressive increase in microhardness. Based on this combinatorial assessment, two promising fcc-based precipitation strengthened systems have been identified; Al0.3CuCrFeNi2 and Al0.3CoCrFeNi, and both compositions were subsequently thermo-mechanically processed via conventional techniques. The phase stability and mechanical properties of these alloys have been investigated and will be presented. Additionally, the activation energy for grain growth as a function of Al content in these complex alloys has also been investigated. Change in fcc grain growth kinetic was studied as a function of aluminum; the apparent activation energy for grain growth increases by about three times going from Al0.1CoCrFeNi (3% Al (at%)) to Al0.3CoCrFeNi. (7% Al (at%)). Furthermore, Al addition leads to the precipitation of highly refined ordered L12 (γ′) and B2 precipitates in Al0.3CoCrFeNi. A detailed investigation of precipitation of the ordered phases in Al0.3CoCrFeNi and their thermal stability is done using atom probe tomography (APT), transmission electron microscopy (TEM) and Synchrotron X-ray in situ and ex situ analyses. The alloy strengthened via grain boundary strengthening following the Hall-Petch relationship offers a large increment of strength with small variation in grain size. Tensile strength of the Al0.3CoFeNi is increased by 50% on precipitation fine-scale γ′ precipitates. Furthermore, precipitation of bcc based ordered phase B2 in Al0.3CoCrFeNi can further strengthen the alloy. Fine-tuning the microstructure by thermo-mechanical treatments achieved a wide range of mechanical properties in the same alloy. The Al0.3CoCrFeNi HEA exhibited ultimate tensile strength (UTS) of ~250 MPa and ductility of ~65%; a UTS of ~1100 MPa and ductility of ~30%; and a UTS of 1850 MPa and a ductility of 5% after various thermo-mechanical treatments. Grain sizes, precipitates type and size scales manipulated in the alloy result in different strength ductility combinations. Henceforth, the alloy presents a fertile ground for development by grain boundary strengthening and precipitation strengthening, and offers very high activation energy of grain growth aptly suitable for high-temperature applications.

This thesis explores nanostructuring in TiSiCN, ZrAlN, and TiAlN thin films deposited by cathodic arc evaporation onto cemented carbide substrates, with intended applications for cutting tools. The three systems were found to exhibit age hardening upon annealing, by different mechanisms, into the superhard regime (≥30 GPa), as determined by a combination of electron microscopy, X-ray diffraction, atom probe tomography, erda, and nanoindentation tech- niques. TiSiCN forms nanocomposite films during growth by virtue of Si segregation to the surface of TiCN nanocrystallites while simultaneously pro- moting renucleation. Thus, the common columnar microstructure of TiCN and low-Si-content (≤5 at. %) TiSiN-films is replaced by a “feather-like” nanos- tructure in high-Si-content (≥10 at. %) TiSiCN films. The presence of C promotes the formation of this structure, and results in an accelerated age hardening beginning at temperatures as low as 700 °C. The thermal stability of the TiSiCN films is, however, decreased compared to the TiSiN system by the loss of Si and interdiffusion of substrate species; C was found to ex- acerbate these processes, which became active at 900 °C. The ZrAlN system forms a two-phase nanostructure during growth consisting of cubic ZrAlN and wurtzite ZrAlN. Upon annealing to 1100 °C, the c-Zr(Al)N portion of the films recovers and semicoherent brick-like w-(Zr)AlN structures are formed. Age hardening by 36 % was obtained before overageing sets in at 1200 °C. As-deposited and annealed solid solution Ti0.33Al0.67N thin films were characterized for the first time by atom probe tomography. The as-deposited film was found to be at the very initial stage of spinodal decomposition, which continued during annealing of the film at 900 °C for 2 h. N preferentially segregates to Al-rich domains in the annealed sample, causing a compositional variation between Ti-rich and Al-rich domains, to maintain the stoichiometry for the developing AlN phase. That effect also compensates for some of the coherency strain formed between cubic domains of TiN and AlN. Finally, a possible Kirkendall effect caused by an imbalance in the metal interdiffusion during the spinodal decomposition was discovered.

High entropy alloys (HEAs), also referred to as complex concentrated alloys (CCAs), are a relatively new class of alloys that have gained significant attention since 2010 due to their unique balance of properties that include high strength, ductility and excellent corrosion resistance. HEAs are usually based on five or more elements alloyed in near equimolar concentrations, and exhibit simple microstructures by the formation of solid solution phases instead of complex compounds. HEAs have great potential in the design of new materials; for instance, for lightweight structural applications and elevated temperature applications. The relation between grain size and yield strength has been a topic of significant interest not only to researchers but also for industrial applications. Though some research papers have been published in this area, consensus among them is lacking, as the studies yielded different results. Al atom being a large atom causes significant lattice distortion. This work attempts to study the Hall-Petch relationship for Al0.3CoFeNi and Al0.3CoCrFeNi and to compare the data of friction stress σ0 and Hall-Petch coefficient K with published data. The base alloys for both these alloys are CoFeNi and CoCrFeNi respectively. It was observed by atom probe tomography (APT) that clustering of Al-Ni atoms in these two base CCAs was responsible for imparting such high values of K. Additionally the high value of K in the CoCrFeNi HEA can also be attributed to the presence of Co-Cr clusters.

The self-assembly of magnesium aluminate spinel as a result of dewetting an overlaid thin film of (chiefly) gold was investigated. Thin films of gold were deposited on single-crystalline spinel substrates and were heat-treated to dewet gold film which led to self-assembly of intricate structures consisting of faceted spherical particles atop of frustums. The current work was conducted in continuation of previous studies which reported formation of such intricate structures. The most recent studies had evidently overruled a pure gold self-assembly scenario as was pointed out in preliminary investigations. It was in fact proven that these structures consist of three distinct parts: (i) a single or polycrystalline gold faceted sphere, (ii) quasi-phase interfacial bilayer, and (iii) a crystalline MgAl2O4 necking structure spontaneously risen from spinel substrate. In the current work, samples were produced through different film deposition methods of sputter, thermal evaporation, and e-beam evaporation coating which underwent thermal annealing to induce dewetting of gold film and subsequent self-assembly of intricate structures. Several characterization methods such as electron microscopy, X-ray energy dispersive spectroscopy, electron energy loss spectroscopy, and atom probe tomography were utilized to survey the different features of the intricate structures with focus on chemical analysis of the gold-spinel interface. The results rejected the previous findings about formation of interface complexion at the boundary of gold-spinel. It was found out that gold-spinel interface is in fact an ordinary metal-oxide boundary with sharp atomic distinction and no inter-diffusion or formation of interfacial complexion. It was further discovered that dewetting pure gold thin films does not result in formation of spinel self-assembly and existence of elemental impurities of copper (Cu) in the initial film is vital in development of such structures. Finally, it was concluded that chemical composition of metallic overlayer and the heat treatment parameters most fundamentally influence formation and physical characteristics of those self-assembled structures. / Thesis / Master of Applied Science (MASc)

Electron beam induced current (EBIC) and atom probe tomography (APT) were used in this study to determine electrical activities and impurity compositions at extended defects in multicrystalline silicon (mc-Si) samples. The results provide, for the first time, information regarding the chemical species present at defects whose electrical activity has previously been measured. A new APT specimen fabrication process was developed with the ability to select a specific defect for APT analysis. Development of the APT specimen fabrication process proceeded by first selecting and optimising the preferential etching for nano-scale defect delineation. Three etchants were evaluated, namely Secco, Sirtl and Dash, from which the Secco etch was selected. Three parameters were optimised to produce etch pits with geometries that meet the requirements imposed by APT specimen fabrication methods. The optimum parameters were 0.05M potassium dichromate concentration, 20°C etch temperature, and 30sec etch time. In the second stage, marking techniques were developed in order for the defects to be located throughout the APT specimen fabrication process. However, it became apparent that the conventional APT specimen fabrication method could not be used to fabricate APT specimens containing selected defects in a mc-Si sample. This led to the development of a novel APT specimen fabrication approach which allowed APT specimens to be fabricated, reproducibly, containing grain boundaries and isolated dislocations. In order to evaluate accurately iron contamination in mc-Si, four atom probe parameters were optimised to maximise detection sensitivity: the evaporation rate, the laser beam energy, the pulse repetition rate and the specimen temperature. The optimisation process can be divided in to two parts. In the first part, a matrix of pre-sharpened single-crystal silicon specimens was subjected to a variety of experimental parameters. The optimised parameters were determined to be 0.3% evaporation rate, 0.5nJ beam energy, 160kHz repetition rate and 55K specimen temperature. The second part was to determine the iron detection efficiency –the percentage of detected Fe ions that can be correctly identified as Fe– and sensitivity using these parameters to analyse a specially prepared iron calibration specimen. The values were determined to be a detection efficiency of about 35% and sensitivity of 54ppm or 2.70x10¹⁸ atom/cm³. The APT specimen fabrication process and the optimised APT analysis parameters were used to analyse four extended defects in mc-Si samples subjected to three different processing conditions, namely gold-contaminated, as-grown and phosphorus diffusion gettering (PDG). The important aspects of the analysis are listed below: • Gold was not detected at the grain boundary and its associated dislocations in the gold-contaminated specimen. The binding enthalpy of gold to such defects is thus less than 0.63eV. • Iron was not detected in any specimen. • Copper was observed at the grain boundary in the as-grown specimen in the form of individual atoms as well as clusters with diameters ranging between 4nm and 9nm. The electrical activity of the grain boundary was about 58%. • Nickel and carbon were detected at the grain boundary in the post-PDG specimen with the former having platelet structures with diameters and thicknesses ranging between 4nm-7nm and 2nm-4nm, respectively. The recombination strength of the defect was about 22%. • Two nickel clusters were found at the isolated dislocation in the post-PDG specimen. The clusters were spherical with an average diameter of 10nm. The distance between the two clusters was 35nm. The recombination strength of the defect was about 4%.

Cette thèse porte sur l'étude des phénomènes qui se produisent lors de la réaction métal-silicium (siliciuration) en couches minces et dans des nanofils. En effet, les phénomènes tels que la germination, la croissance latérale, la croissance normale et la diffusion doivent être compris pour réaliser les contacts des futurs dispositifs de la microélectronique. La comparaison entre la siliciuration en couches minces et dans les nanofils est l'un des principaux aspects de ce travail. La distribution atomique en 3D des éléments chimiques dans les différentes siliciures de Ni a été obtenue par sonde atomique tomographique (SAT). Pour permettre l'analyse par SAT de différents types des nanofils à base de silicium, plusieurs méthodes originales de préparation des échantillons par faisceau d'ions focalisés ont été développées et testées. D'autre part, des mesures in situ et en temps réel de diffusion réactive par diffraction de rayons X ont permis de mettre en évidence l'importance de la germination dans la formation des phases et de déterminer les cinétiques de formation des siliciures de Ni allié en Pt, notamment des régimes de réaction aux interfaces et de croissance latérale. La forme caractéristique associée à la croissance latérale a été déterminée par des analyses ex situ de microscopie électronique en transmission et comparée aux modèles existants. La détermination par SAT de l'espèce qui diffuse majoritairement donne aussi des indications sur les mécanismes de formation des phases et de relaxation des contraintes dans les siliciures. / This thesis focuses on the phenomena that occur during the reaction between metal and silicon (silicide) on thin films and nanowires. Indeed, phenomena such as nucleation, lateral growth, normal growth and diffusion must be understood to make contacts for future microelectronic devices. The comparison between the silicide formation on thin films and nanowires is one of the main aspects of this work. Atomic distribution in 3D for the elements in different Ni silicide phase was obtained by atom probe tomography (APT). To enable the analysis of different types of silicon nanowires by APT, several original methods for sample preparation by focused ion beam has been developed and tested. On the other hand, in situ and real-time analysis by X-ray diffraction during the reactive diffusion helped to highlight the importance of the nucleation of a phase and to determine the kinetics of formation of Ni(Pt) silicides, including the reaction on the interfaces and the lateral growth. The characteristic shape associated with the lateral growth was determined by ex-situ transmission electron microscopy analyzes and was compared with the existing theoretical models. Moreover, the determination of the fastest diffusing species by APT provided information on the mechanisms of phase formation and stress relaxation in the silicide.

Ce travail de thèse aborde la problématique de caractérisation structurale à l'échelle atomique d'hétérostructures à base de semiconducteurs II-VI. La sonde atomique tomographique et la microscopie électronique en transmission sont utilisées de façon couplées pour obtenir la structure et la composition des interfaces dans les super-réseaux de ZnTe/CdSe afin d'améliorer leurs processus de croissance. La structure et la distribution des atomes de Cr dans le semiconducteur magnétique (Cd,Cr)Te sont aussi présentées.La sonde atomique tomographique permet d'obtenir des données quantitatives à partir de l'évaporation des semi-conducteurs ZnTe et CdSe lorsque les paramètres expérimentaux sont optimisés. Le spectre de masse à partir duquel les compositions sont extraites doit d'abord être correctement interprétés car il dépend des conditions d'évaporation. Grâce à différentes études expérimentales, il a été observé que pour détecter un mélange stœchiométrique de cations et d'anions dans les semi-conducteurs ZnTe et CdSe, il est nécessaire d'appliquer une faible tension à la pointe et des énergies d'impulsions lasers proche de 2.5 nJ à une longueur d'onde de 515 nm (vert). Régler les rapports de charge entre cation Zn++/Zn+ autour de 0.06 et Cd++/Cd+ autour de 0.35 lors de l'évaporation de différentes pointes et dans différentes sondes atomiques permet d'atteindre une composition correcte des deux couches ZnTe et CdSe. Les paramètres déterminés expérimentalement permettent de réduire la perte de détection des ions liés à leurs différents champs d'évaporations. En revanche, il est préférable de privilégier une évaporation à laser minimale à 343 nm (UV) pour optimiser la résolution spatiale de la sonde et la reconstruction 3D pour ces deux semi-conducteurs. Pour l'analyse des super-réseaux par sonde atomique, il est donc primordiale de d'abord définir l'objectif de l'expérience (précision de composition ou de reconstruction) pour pouvoir choisir les bons paramètres d'analyse.L'étude structurale des super-réseaux de ZnTe/CdSe a révélé que les interfaces sont constituées de liaisons ZnSe. La nature des interfaces a été obtenue par imagerie en contraste chimique en haute résolution, par profils de concentrations obtenus par la méthode des zêta-facteurs en EDX et par la présence d'ions moléculaires ZnSe dans le spectre de masse en sonde atomique. L'étude structurale de nombreux échantillons a prouvé la capacité des atomes de Zn et de Se à former des liaisons au détriment des liaisons CdTe. Les conditions de croissance ont été successivement améliorées pour tenir compte de ces observations et afin de forcer la formation d'interfaces de type CdTe. Malgré les précautions prises, la présence de ZnSe semble inévitable et les options encore envisagées pour obtenir ces interfaces sont réduites.La sonde atomique couplée à l'analyse chimique EDX a révélé la présence d'agglomération des atomes de Cr sous forme de zone riche large de quelques nanomètres dans le semi-conducteur magnétique dilué CdCrTe. Ces deux techniques ne permettent pas de déterminer la composition précise de ces agglomérations riches en Cr mais leurs formes semblent évoluer avec l'augmentation de la teneur en Cr dans différents échantillons. / This PhD work addresses the problem of atomic scale structural characterization of II-VI based heterostructures. The correlative use of atom probe tomography and transmission electron microscopy reveals the structure and composition of interfaces in ZnTe/CdSe superlattices to improve their growth condition. The atomic structure and the atomic Cr distribution are also revealed in (Cd,Cr)Te diluted magnetic semiconductor.When experimental parameters set in the atom probe are optimized, quantitative data can be obtain on both ZnTe and CdSe semiconductors with this technique. Compositions are obtained with the mass spectrum and it has to be correctly indexed. Experimental studies reveal that with the application of a low voltage on the tip and a moderate laser power around 2.5 nJ with a green laser (515 nm), the measured composition in ZnTe and CdSe are close to the stoichiometry between cations and anions. Setting the cations ratio Zn++/Zn+ around 0.06 et Cd++/Cd+ around 0.35 during the evaporation of the field is a reliable way to reach the optimum evaporation condition for different tips and in different atom probes. Those parameters are responsible for lowering the loss in the detection of the ions due to their different evaporation field. However, the application of a low laser power in UV (343 nm) will enhance the spatial resolution of the atom probe and the 3D reconstruction of both semiconductors. Before the evaporation of the superlattices, it is therefore compulsory to define the objectives of the experiment first.Structural studies of ZnTe/CdSe superlattices reveal that interfaces are composed of ZnSe. Their chemistry is obtain by high resolution Z-contrast images, composition profiles obtain by the zeta-factor method in EDX and by the presence of ZnSe molecular ions in the atom probe tomography mass spectrum. Many samples are investigated to highlight the ability of Zn and Se to bind together instead of Cd and Te. Growth condition are improved by taking this information into account and to force the formation of CdTe based interfaces. Despite the growth precaution, ZnSe bonds seem inevitable and it lowers the possibility to finally obtain CdTe interfaces.Atom probe tomography studies correlated with EDX chemical mapping reveal the gathering of Cr in rich region off a few nanometers in the diluted magnetic semiconductor CdCrTe. Both techniques are not reliable to get the composition of this Cr riche regions but they reveal a change in their shapes with the increase of Cr concentration in different samples.

Conventional casting alloys Al-7Si-Mg A356/7 contain between 6.5 and 7.5% Si, together with 0.25-0.7% Mg and are used for critical castings in the automotive and aerospace industries. These alloys are also the most popular alloys used for semi-solid metal (SSM) forming due to good castability and fluidity imparted by the large volumes of the Al-Si eutectic. Despite their industrial importance, there is a lack of detailed research work revealing precipitate micro- and nanostructural evolution during aging of these alloys compared with the Al-Mg-Si 6000 series wrought alloys. This study characterises the heat treatment response of SSM-processed Al-7Si-Mg alloys in comparison with conventionally liquid cast alloys (investment casting and gravity die casting). It is shown that, provided that the maximum quantity of the alloy’s Mg is placed into solid solution during solution treatment, and that the alloy’s Fe content is within specification, the response to age hardening of Al-7Si-Mg alloys is independent of the processing technique used. The nanostructural evolution of Al- 7Si-Mg alloys after artificial aging with and without natural pre-aging has been characterized using transmission electron microscopy and atom probe tomography and correlated with hardness and mechanical tensile properties. The number densities and Mg:Si ratios of solute clusters, GP zones and β"-needles were determined. The heat treatment response of SSM-processed casting alloys A356/7 alloys are also compared with SSM-processed Al-Mg-Si 6000 series wrought alloys, with the advantage of having similar globular microstructures. The high Si-content of the casting alloys compared to the wrought alloys offers several advantages, including a faster artificial aging response (shorter T6 aging cycles), higher strength for comparable Mg contents and less sensitivity to prior natural aging on peak strength. Finally, an age-hardening model was developed for the Al-7Si-Mg alloys, including a method of incorporating the effects of changes in Mg-content on the aging curves. / Thesis (PhD(Eng))--University of Pretoria, 2011. / Materials Science and Metallurgical Engineering / unrestricted

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