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Absolute K-shell x-ray cross sections and Auger-electron cross sections are measured for carbon for 0.6 to 2.0 MeV proton incident on CH₄, n-C₄H₁₀ (n-Butane), i-C₄H₁₀ (isobutane), C₆H₆ (Benzene), C₂H₂ (Acetylene), CO and CO₂. Carbon K-shell fluorescence yields are calculated from the measurements of x-ray and Auger-electron cross sections. X-ray cross sections are measured using a variable geometry end window proportional counter. An alternate method is described for the measurement of the transmission of the proportional counter window. Auger electrons are detected by using a constant transmission energy Π/4 parallel pi ate electrostatic analyzer. Absolute carbon K-shell x-ray cross sections for CH₄ are compared to the known results of Khan et al. (1965). Auger-electron cross sections for proton impact on CH₄ are compared to the known experimental values of RΦdbro et al. (1979), and to the theoretical predictions of the first Born and ECPSSR. The data is in good agreement with both the first Born and ECPSSR, and within our experimental uncertainties with the measurements of RΦdbro et al. The x-ray cross sections, Auger-electron cross sections and fluorescence yields are plotted as a function of the Pauling charge, and show significant variations. These changes in the x-ray cross sections are compared to a model based on the number of electrons present in the 2s and 2p sub shells of these carbon based molecules. The changes in the Auger-electron cross sections are compared to the calculations of Matthews and Hopkins. The variation in the fluorescence yield is explained on the basis of the multiconfiguration Dirac-Fock model.

We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) "phonon bottlenecking" was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered Ith by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the earner dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore this technique has been shown that the inhomogeneous broadening of the photoluminescence spectrum is not purely affected by just size and composition. We suggest that other processes such as state occupancy, In roughing, and exciton binding energies may account for the extra energy.

Orientador: Lázaro Aurélio Padilha Junior / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-09-02T09:51:28Z (GMT). No. of bitstreams: 1 Nagamine_Gabriel_M.pdf: 6846623 bytes, checksum: 1daab6ac65771517c50786728dfce86e (MD5) Previous issue date: 2017 / Resumo: Pontos quânticos coloidais (QDs) ternários de CuInS2 (CIS) surgiram como uma alternativa não tóxica, altamente promissora, aos já bem estabelecidos QDs binários de CdX e PbX (X=Se,S). Além de não possuírem metais pesados em sua composição, esses novos materiais apresentam diversas características desejáveis, o que os torna fortes candidatos a serem aplicados em novas tecnologias, tanto em biologia quanto na geração de nova fontes de energia renovável. Além disso, esses QDs apresentam diversas propriedades ópticas que os diferem radicalmente dos QDs binários já conhecidos e ainda são pouco compreendidas. Dentre elas, podemos citar um largo espectro de fotoluminescência (PL), com decaimentos longos e multi-exponenciais e um espectro de absorção pouco definido, com uma longa cauda que vai para o infravermelho. Adicionalmente, esses nanomateriais apresentam um grande Stokes shift, de até 500 meV, cuja origem ainda é desconhecida e amplamente debatida na literatura. Com o intuito de desvendar os mecanismos por trás dessas propriedades distintas, nesse trabalho, realizamos uma série de estudos da sua dinâmica ultrarrápida e de espectroscopia não-linear para revelar a estrutura eletrônica desses QDs. Das medidas de dinâmica ultrarrápida, mostramos uma maneira alternativa de medir-se o tamanho dessas nanopartículas, por meio da sua seção de choque de absorção em 3,1 eV, que seria independente da variabilidade morfológica apresentada por elas. Adicionalmente, fazendo um estudo da dependência das interações multi-éxciton desses QDs com o tamanho, reportamos que esses nanomateriais apresentam interações Coulombianas reduzidas em relação aos QDs binários já conhecidos. Das medidas de espectroscopia não-linear, mostramos a primeira comprovação experimental de que a transição óptica entre os níveis fundamentais da banda de valência e condução é proibida por paridade em partículas esféricas. Além disso, comparando o espectro de absorção de 2 fótons das amostras estudadas com imagens de microscopia eletrônica de transmissão (TEM), mostramos que quebras na simetria das funções de onda dos portadores nesses QDs alteram as suas regras de seleção para transições ópticas. Adicionalmente, verificamos que, controlando a composição e tamanho desses QDs, é possível obter seções de choque de 2PA de até 13.500 GM dentro da janela de transparência óptica do tecido do corpo humano / Abstract: Ternary CuInS2 (CIS) Colloidal Quantum Dots (QDs) have emerged as a non-toxic promising alternative to the CdX and PbX (X=Se,S) binary QDs. Besides not having heavy metals on their composition, these new materials show several desirable features, which makes them strong candidates to be applied in new technologies, from biology to the new generation of renewable energy sources. Furthermore, these QDs present various optical properties that radically differs from the already well studied binary QDs and yet are not well understood. Among them, we can cite a large photoluminescence (PL) spectra, with long and multi-exponential decays and a poorly defined absorption spectra, with a long infrared tail. Additionally, these nanomaterials present large Stokes shift, up to 500 meV, whose origin is still not well understood and largely debated on the literature. To reveal the mechanism behind these distinguished properties, here, we perform a series of ultrafast spectroscopy and non-linear spectroscopy studies to reveal the electronic band structure of these QDs. From the ultrafast dynamics measurements, we show an alternative way to measure the size of these nanoparticles, through their absorption cross section in 3,1 eV, which would be independent from the morphologic variability presented by them. Additionally, by performing studies of the size dependent multi-exciton interactions, we report that these kind of nanomaterials present reduced Coulombic interactions in relation to de already known binary QDs. From the non-linear spectroscopy measurements, we show the first experimental confirmation that the optical transition between the electron and hole ground state are parity forbidden in the spherical particles. In addition, comparing the two-photon absorption (2PA) spectra of the studied samples with their transmission electron microscopy images, we show that symmetry breaking of the electronic wave functions in these QDs change their optical transition selection rules. Additionally, we verify that, by controlling the size and composition of these QDs, it is possible to obtain 2PA cross section as high as 13,500 GM inside the transparency window of the human tissue / Mestrado / Física / Mestre em Física / 1547612/2015 / 13/16911-2 / CAPES / FAPESP

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Cette thèse est consacrée à l’étude de la dynamique des porteurs de charges sous forte concentration. La méthode Monte Carlo « Full-Band » a été utilisée pour la modélisation du transport et la relaxtion des porteurs de charge dans les semi-conducteurs III-V (GaAs, InAs, GaSb, In0.53Ga0.47As et GaAs0.50Sb0.50). Les structures électroniques ont été calculées par la Méthode des Pseudo-potentiels Non-Locaux Empiriques, ce qui a notamment permis de traiter le cas de l’alliage ternaire GaAs0.50Sb0.50 dans une approche de type Cristal Virtuel, matériau qui souffre d’un manque de caractérisations expérimentales. Dans ces semi-conducteurs polaires fortement dopés, le couplage entre phonons optiques polaires et plasmons a été pris en compte via le calcul de la fonction diélectrique totale incluant les termes associés à l’amortissement dans le système phonon-plasmon auto-cohérents. Ce phénomène de couplage phonon-plasmon, est apparu primordial pour l’analyse de la mobilité des électrons dans GaAs, In0.53Ga0.47As et GaAs0.50Sb0.50 en fonction de la concentration en accepteurs. Dans des semi-conducteurs fortement photo-excités, la relaxation des électrons et des trous a été étudiée en tenant compte du chauffage de la population de phonon (qui ralentit la relaxation des porteurs) avec un modèle Monte Carlo dédié à la dynamique des phonons (Thèse de H. Hamzeh). L’étude a montré que le ralentissement de la relaxation dépend fortement des concentrations de porteurs photo-excités à cause du couplage phonon-plasmon dans ces matériaux. Les processus de génération et recombinaison de porteurs tels que l’absorption optique, la recombinaison radiative, l’ionisation par choc et les recombinaisons Auger, ont été implémentés. Les taux de génération et recombinaison associés sont calculés directement sur les distributions de porteurs modélisées, sans supposer des distributions à l’équilibre. Ces processus sont cruciaux pour l’optimisation de Cellules Solaires à Porteurs Chauds. Le photo-courant de ce type de cellule théorique à haut rendement de 3ème génération avec un absorbeur en In0.53Ga0.47As a été étudié. / The aim of this work is the study of charge carriers dynamic under high carrier concentration regimes. The « Full-Band » Monte Carlo method is used for charge carrier transport/relaxation modeling in III-V semiconductors (GaAs, InAs, GaSb, In0.53Ga0.47As and GaAs0.50Sb0.50). Electronic band structures are calculated with the Non-Local Empirical Pseudopotential Method which enables the study of ternary alloys within a Virtual Crystal approach. This method has been applied to In0.53Ga0.47As and GaAs0.50Sb0.50, the latter being a promising material for Heterojunction Bipolar Transistor applications though it lacks experimental characterizations. In highly doped polar semiconductors, the polar optical phonon – plasmon coupling is accounted for via the calculation of the total dielectric function including self-consistent damping parameters. This coupling appeared crucial for the calculation of minority electron mobilities in highly p-doped GaAs, In0.53Ga0.47As and GaAs0.50Sb0.50. In strongly photo-excited semiconductors, phonon population heating has been included in the study of electrons and holes relaxation. Hot phonon populations, that slow the charge carrier relaxation through the phonon bottleneck effect, have been dealt with a phonon dedicated Monte Carlo model (PhD H. Hamzeh). The study showed that carrier relaxation slowing depends strongly on the photo-excited carrier concentration because of phonon-plasmon coupling in those semiconductors. Charge carrier generation and recombination processes such as photon absorption, radiative recombination, impact ionization and Auger recombinations, have been implemented. The associated generation and recombination rates are directly calculated with the sampled carrier distribution. Thus, the use of coefficients and lifetimes is avoided, and non equilibrium regimes were modeled. Those processes are of prime importance for Hot Carrier Solar Cells optimization. The theoretical photo-current of this kind of 3rd generation solar cell with an In0.53Ga0.47As absorber have been studied.