Chemical Vapour Deposition (CVD) diamond detectors were modelled for dosimetry of radiotherapy beams. This was achieved by employing the EGSnrc Monte Carlo (MC) method to investigate certain properties of the detector, such as size, shape and electrode materials. Simulations were carried out for a broad 6 MV photon beam, and water phantoms with both uniform and non-uniform voxel dimensions. A number of critical MC parameters were investigated for the development of a model that can simulate very small voxels. For a given number of histories (100 million), combinations of the following parameters were analyzed: cross section data, boundary crossing algorithm and the HOWFARLESS option, with the rest of the transport parameters being kept at default values. The MC model obtained with the optimized parameters was successfully validated against published data for a 1.25 MeV photon beam and CVD diamond detector with silver/carbon/silver structure with thicknesses of 0.07/0.2/0.07 cm for the electrode/detector/electrode, respectively. The interface phenomena were investigated for a 6 MV beam by simulating different electrode materials: aluminium, silver, copper and gold for perpendicular and parallel detector orientation with regards to the beam. The smallest interface phenomena were observed for parallel detector orientation with electrodes made of the lowest atomic number material, which was aluminium. The simulated percentage depth dose and beam profiles were compared with experimental data. The best agreement between simulation and measurement was achieved for the detector in parallel orientation and aluminium electrodes, with differences of approximately 1%. In summary, investigations related to the CVD diamond detector modelling revealed that the EGSnrc MC code is suitable for simulation of small size detectors. The simulation results are in good agreement with experimental data and the model can now be used to assist with the design and construction of prototype diamond detectors for clinical dosimetry. Future work will include investigating the detector response for different energies, small field sizes, different orientations other than perpendicular and parallel to the beam, and the influence of each electrode on the absorbed dose.

Chemical Vapour Deposition (CVD) diamond detectors were modelled for dosimetry of radiotherapy beams. This was achieved by employing the EGSnrc Monte Carlo (MC) method to investigate certain properties of the detector, such as size, shape and electrode materials. Simulations were carried out for a broad 6 MV photon beam, and water phantoms with both uniform and non-uniform voxel dimensions. A number of critical MC parameters were investigated for the development of a model that can simulate very small voxels. For a given number of histories (100 million), combinations of the following parameters were analyzed: cross section data, boundary crossing algorithm and the HOWFARLESS option, with the rest of the transport parameters being kept at default values. The MC model obtained with the optimized parameters was successfully validated against published data for a 1.25 MeV photon beam and CVD diamond detector with silver/carbon/silver structure with thicknesses of 0.07/0.2/0.07 cm for the electrode/detector/electrode, respectively. The interface phenomena were investigated for a 6 MV beam by simulating different electrode materials: aluminium, silver, copper and gold for perpendicular and parallel detector orientation with regards to the beam. The smallest interface phenomena were observed for parallel detector orientation with electrodes made of the lowest atomic number material, which was aluminium. The simulated percentage depth dose and beam profiles were compared with experimental data. The best agreement between simulation and measurement was achieved for the detector in parallel orientation and aluminium electrodes, with differences of approximately 1%. In summary, investigations related to the CVD diamond detector modelling revealed that the EGSnrc MC code is suitable for simulation of small size detectors. The simulation results are in good agreement with experimental data and the model can now be used to assist with the design and construction of prototype diamond detectors for clinical dosimetry. Future work will include investigating the detector response for different energies, small field sizes, different orientations other than perpendicular and parallel to the beam, and the influence of each electrode on the absorbed dose.

Cette thèse est consacrée à l’étude de la dynamique des porteurs de charges sous forte concentration. La méthode Monte Carlo « Full-Band » a été utilisée pour la modélisation du transport et la relaxtion des porteurs de charge dans les semi-conducteurs III-V (GaAs, InAs, GaSb, In0.53Ga0.47As et GaAs0.50Sb0.50). Les structures électroniques ont été calculées par la Méthode des Pseudo-potentiels Non-Locaux Empiriques, ce qui a notamment permis de traiter le cas de l’alliage ternaire GaAs0.50Sb0.50 dans une approche de type Cristal Virtuel, matériau qui souffre d’un manque de caractérisations expérimentales. Dans ces semi-conducteurs polaires fortement dopés, le couplage entre phonons optiques polaires et plasmons a été pris en compte via le calcul de la fonction diélectrique totale incluant les termes associés à l’amortissement dans le système phonon-plasmon auto-cohérents. Ce phénomène de couplage phonon-plasmon, est apparu primordial pour l’analyse de la mobilité des électrons dans GaAs, In0.53Ga0.47As et GaAs0.50Sb0.50 en fonction de la concentration en accepteurs. Dans des semi-conducteurs fortement photo-excités, la relaxation des électrons et des trous a été étudiée en tenant compte du chauffage de la population de phonon (qui ralentit la relaxation des porteurs) avec un modèle Monte Carlo dédié à la dynamique des phonons (Thèse de H. Hamzeh). L’étude a montré que le ralentissement de la relaxation dépend fortement des concentrations de porteurs photo-excités à cause du couplage phonon-plasmon dans ces matériaux. Les processus de génération et recombinaison de porteurs tels que l’absorption optique, la recombinaison radiative, l’ionisation par choc et les recombinaisons Auger, ont été implémentés. Les taux de génération et recombinaison associés sont calculés directement sur les distributions de porteurs modélisées, sans supposer des distributions à l’équilibre. Ces processus sont cruciaux pour l’optimisation de Cellules Solaires à Porteurs Chauds. Le photo-courant de ce type de cellule théorique à haut rendement de 3ème génération avec un absorbeur en In0.53Ga0.47As a été étudié. / The aim of this work is the study of charge carriers dynamic under high carrier concentration regimes. The « Full-Band » Monte Carlo method is used for charge carrier transport/relaxation modeling in III-V semiconductors (GaAs, InAs, GaSb, In0.53Ga0.47As and GaAs0.50Sb0.50). Electronic band structures are calculated with the Non-Local Empirical Pseudopotential Method which enables the study of ternary alloys within a Virtual Crystal approach. This method has been applied to In0.53Ga0.47As and GaAs0.50Sb0.50, the latter being a promising material for Heterojunction Bipolar Transistor applications though it lacks experimental characterizations. In highly doped polar semiconductors, the polar optical phonon – plasmon coupling is accounted for via the calculation of the total dielectric function including self-consistent damping parameters. This coupling appeared crucial for the calculation of minority electron mobilities in highly p-doped GaAs, In0.53Ga0.47As and GaAs0.50Sb0.50. In strongly photo-excited semiconductors, phonon population heating has been included in the study of electrons and holes relaxation. Hot phonon populations, that slow the charge carrier relaxation through the phonon bottleneck effect, have been dealt with a phonon dedicated Monte Carlo model (PhD H. Hamzeh). The study showed that carrier relaxation slowing depends strongly on the photo-excited carrier concentration because of phonon-plasmon coupling in those semiconductors. Charge carrier generation and recombination processes such as photon absorption, radiative recombination, impact ionization and Auger recombinations, have been implemented. The associated generation and recombination rates are directly calculated with the sampled carrier distribution. Thus, the use of coefficients and lifetimes is avoided, and non equilibrium regimes were modeled. Those processes are of prime importance for Hot Carrier Solar Cells optimization. The theoretical photo-current of this kind of 3rd generation solar cell with an In0.53Ga0.47As absorber have been studied.

Cette thèse est consacrée à l'étude de la dynamique des porteurs de charges sous forte concentration. La méthode Monte Carlo " Full-Band " a été utilisée pour la modélisation du transport et la relaxtion des porteurs de charge dans les semi-conducteurs III-V (GaAs, InAs, GaSb, In0.53Ga0.47As et GaAs0.50Sb0.50). Les structures électroniques ont été calculées par la Méthode des Pseudo-potentiels Non-Locaux Empiriques, ce qui a notamment permis de traiter le cas de l'alliage ternaire GaAs0.50Sb0.50 dans une approche de type Cristal Virtuel, matériau qui souffre d'un manque de caractérisations expérimentales. Dans ces semi-conducteurs polaires fortement dopés, le couplage entre phonons optiques polaires et plasmons a été pris en compte via le calcul de la fonction diélectrique totale incluant les termes associés à l'amortissement dans le système phonon-plasmon auto-cohérents. Ce phénomène de couplage phonon-plasmon, est apparu primordial pour l'analyse de la mobilité des électrons dans GaAs, In0.53Ga0.47As et GaAs0.50Sb0.50 en fonction de la concentration en accepteurs. Dans des semi-conducteurs fortement photo-excités, la relaxation des électrons et des trous a été étudiée en tenant compte du chauffage de la population de phonon (qui ralentit la relaxation des porteurs) avec un modèle Monte Carlo dédié à la dynamique des phonons (Thèse de H. Hamzeh). L'étude a montré que le ralentissement de la relaxation dépend fortement des concentrations de porteurs photo-excités à cause du couplage phonon-plasmon dans ces matériaux. Les processus de génération et recombinaison de porteurs tels que l'absorption optique, la recombinaison radiative, l'ionisation par choc et les recombinaisons Auger, ont été implémentés. Les taux de génération et recombinaison associés sont calculés directement sur les distributions de porteurs modélisées, sans supposer des distributions à l'équilibre. Ces processus sont cruciaux pour l'optimisation de Cellules Solaires à Porteurs Chauds. Le photo-courant de ce type de cellule théorique à haut rendement de 3ème génération avec un absorbeur en In0.53Ga0.47As a été étudié.

The thesis presents methods and criteria for creation and optimization of design of computer experiments. Using the core of a program Freet the optimized designs were created by combination of these methods and criteria. Then, the suitability of the designs for statistical analysis of the tasks vith input random variables was assessed by comparison of the obtained results of six selected functions and the exact (analytically obtained) solutions. Basic theory, definitions of the evaluated functions, description of the setting of optimization and the discussion of the obtained results, including recommendations related to identified weaknesses of certain designs, are presented. The thesis also contains a description of an application that was created to display the results.