In this study, the electrical properties of [Al/(Bi4Ti3O12+V2O5 ) /Ba(Zr0.1Ti0.9)O3/Silicon¡AMFIS ]structure using annealed-BZT films would be improved for the nonvolatile FeRAM device applications. The radio-frequency magnetron sputtering was used to deposit BTV ferroelectric films on Mo/Ti/SiO2/Si and BZT/Si substrates, respectively, and MFMIS and MFIS structures would also be fabricated. The various sputtering parameter effects of BTV films such as the oxygen concentrations, rf power and deposition time would be discussed. Besides, the electrical and physical properties of as-deposited BZT films for (BTV/BZT/Si¡AMFIS) structure would be improved by different rapidly thermal annealing temperature. The physical characteristics of BTV films and annealed-BZT films for various sputtering parameters were obtained from the XRD pattern and SEM morphology. Besides, the memory window, dielectric constant and leakage current of MFM and MFIS structure using BTV films and annealed-BZT films would be found from the HP4284A, RT66A and HP4156C. From the experimental result obtained, the maximum dielectric constant of BTV films for 40 % oxygen concentration and 130W power were 10.79. The leakage current density was about 10-5A/cm2, as the applied electrical field of 200 kV/cm. In addition, the coercive field (Ec) and remanent polarization (2Pr) were 750 kV/cm and 12 £gC/cm2 from the P-E curves, respectively. Finally, the maximum memory window and lower leakage current density of [Al/(Bi4Ti3O12+V2O5) /Ba(Zr0.1Ti0.9)O3/Silicon¡AMFIS) structure would be found and they were 25V and 10-8A/cm2, respectively.