This work evaluates two SiGe BiCMOS technology platforms as candidates for implementing extreme environment capable circuitry, with an emphasis on applications requiring high sensitivity and low noise. In Chapter 1, applications requiring extreme environment sensing circuitry are briefly reviewed and the motivation for undertaking this study is outlined. A case is then presented for the use of SiGe BiCMOS technology to meet this need, documenting the benefits of operating SiGe HBTs at cryogenic temperatures. Chapter 1 concludes with a brief description of device radiation effects in bipolar and CMOS devices, and a basic overview of noise in semiconductor devices and electronic components. Chapter 2 further elaborates on a specific application requiring low-noise circuitry capable of operating at cryogenic temperatures and proposes a number of variants of band-gap reference circuits for use in said system. Detailed simulation and theoretical analysis of the proposed circuits are presented and compared with measurements, validating the techniques used in the proposed designs and emphasizing the need for further understanding of device level low-temperature noise phenomena. Chapter 3 evaluates the feasibility of using a SiGe BiCMOS process, whose response to ionizing radiation was previously uncharacterized, for use in unshielded electronic systems needed for exploration of deep space planets or moons, specifically targeting Europa mission requirements. Measured total ionizing dose (TID) responses for both CMOS and bipolar SiGe devices are presented and compared to similar technologies. The mechanisms responsible for device degradation are outlined, and an explanation of unexpected results is proposed. Finally, Chapter 4 summarizes the work presented and understanding provided by this thesis, concluding by outlining future research needed to build upon this study and fully realize SiGe based extreme environment capable precision electronic systems.

With advancements in CMOS technology, high speed analog circuits that were traditionally implemented with discrete circuit components can now be made monolithically. Antialiasing filters for video signals as well as signal conditioning filters in high speed communication channels are examples of applications where high frequency integrated circuits are now feasible. Transconductance-Capacitor or Gm-C filters are well suited to these applications as they operate in the continuous-time domain and are able to overcome the high-frequency and noise limitations imposed by clocked filter topologies. This thesis covers the design of a programmable fourth-order Chebychev filter with a 50MHz passband using the transconductance-C technique. A previously proposed transconductor based upon a CMOS inverter is used to implement the filter. Since this transconductor has no internal nodes, it can achieve extremely high bandwidths. However, it requires a variable power source for programming. Thus, a wide-band, on-chip, variable-BiCMOS power supply is presented as the method for setting the transconductance. Practical design issues are addressed as well as many methods for compensating non-idealities. Simulations of the filter as well as some parametric measurement of the filter structures are presented. / Graduation date: 1994

Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2003. / Includes bibliographical references. Also available in electronic version. Access restricted to campus users.

Thesis (M. S. in Electrical Engineering)--Vanderbilt University, Aug. 2008. / Title from title screen. Includes bibliographical references.

Thesis (M. App. Sc.)--Carleton University, 2003. / Includes bibliographical references (p. 140-143). Also available in electronic format on the Internet.

Thesis (Ph. D.)--Carleton University, 2003. / Includes bibliographical references (p. 114-127). Also available in electronic format on the Internet.

Thesis (M. Eng.)--Carleton University, 1992. / Also available in electronic format on the Internet.

Thesis (M. Eng.)--Carleton University, 1995. / Also available in electronic format on the Internet.

Thesis (M. Eng.)--Carleton University, 1999. / Includes bibliographical references. Also available in electronic format on the Internet.

A background investigation of the total-dose radiation tolerance of a third generation complementary SiGe:C BiCMOS technology platform was performed. Tolerance was quantified under proton and X-ray radiation sources for both the npn and pnp HBT, as well as for an operational amplifier built with these devices. Furthermore, a technique known as junction isolation radiation hardening was proposed and tested with the goal of improving the SEE sensitivity of the npn by reducing the charge collected by the subcollector in the event of a direct ion strike. Three independent systems were designed, including: 1) a charge amplification channel developed as part of a remote electronics unit for the lunar environment, 2) variable bias circuitry for a self-healing radar receiver, and 3) an ultra-fast x-ray detector for picosecond scale time-domain measurements of evolving chemical reactions. The first two projects capitalized on the wide-temperature performance and radiation tolerance of the SiGe HBT, allowing them to operate under extreme environmental conditions reliably and consistently. The third design makes use of the high-frequency capabilities of the HBT, particularly in emitter-coupled logic (ECL) configurations. Findings concerning the performance of these systems and implications for future research are discussed.