京都大学 / 0048 / 新制・課程博士 / 博士(理学) / 甲第22822号 / 理博第4632号 / 新制||理||1666(附属図書館) / 京都大学大学院理学研究科物理学・宇宙物理学専攻 / (主査)教授 山本 潤, 教授 佐々 真一, 准教授 荒木 武昭 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DFAM

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Meanderline structures are widely used as engineered birefringent materials for waveplates and retarders at radiofrequencies, and have been previously demonstrated at frequencies up to 90 GHz in the millimeter-wave band. In this dissertation, we present results related to the modeling, fabrication, and experimental characterization of meanderlines across the range from 30 to 100 THz, in the long-wave and mid-wave infrared bands. Specific issues addressed in these new designs include spectral dispersion and angular dependence of the retardance, as well as axial ratio and throughput. The impact resulting from the infrared properties of the metals and dielectrics is explicitly included throughout. Several novel applications are identified, including integrated circular polarizers, reflective waveplates, and large-area polarization tags.

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This dissertation addresses several aspects pertaining to polarization in optical fibers and optical waveguide devices. In particular, the analysis and design of fibers that maintain polarization over long lengths, provide zero polarization-mode dispersion, and function as polarizers or mode filters are presented. First, optimum designs for high-birefringence as well as single-polarization single-mode fibers are studied. For high-birefringence fibers, several index profiles were obtained that provided high birefringence while achieving zero or very small dispersion in 1.3 μm and 1.55 μm windows. Also, few index profiles were found that resulted in single-polarization single-mode operation with zero or very small dispersion at about 1.3 μm and 1.55 μm. A wavelength range of 100 nm to 500 nm was achieved for truly single-mode operation. Second, a comprehensive analysis of polarization-mode dispersion in a multiple-clad fiber due to ellipticity of fiber cross-section is carried out. The analysis results are then used to design large effective area single-mode dispersion-shifted fiber that provides zero polarization-mode dispersion at the wavelength 1.55 μm. Effective area on the order of 122 μm² with mode-field diameter of about 10 μm have been attained for this design. Tolerance analysis on the transmission parameters due to ±1% and ±2% variations in the radii of the fiber layers is carried out. Finally, a wedge-shape dielectric waveguides bounded by conducting planes is introduced and analyzed. Conductor and dielectric losses for the fundamental mode in waveguides with wedge angle of π/n; n ≥ 1, and 2π/3 as a special case with noninteger azimuthal number have been evaluated. These waveguides generally support fewer number of modes for smaller wedge angles and the modes cannot be of TM type. They find applications as mode filters and polarizers.. / Ph. D.

Accurate measurement of temperature is essential for the safe and efficient operation and control of a vast range of industrial processes. Many of these processes involve harsh environments, such as high temperature, high pressure, chemical corrosion, toxicity, strong electromagnetic interference, and high-energy radiation exposure. These extreme physical conditions often prevent conventional temperature sensors from being used or make them difficult to use. Novel sensor systems should not only provide accurate and reliable temperature measurements, but also survive the harsh environments through proper fabrication material selections and mechanical structure designs. This dissertation presents detailed research work on the design, modeling, implementation, analysis, and performance evaluation of novel optical high temperature sensors suitable for harsh environment applications. For the first time to our knowledge, an optical temperature sensor based on the broadband polarimetric differential interferometric (BPDI) technology is proposed and tested using single crystal sapphire material. With a simple mechanically structured sensing probe, in conjunction with an optical spectrum-coded interferometric signal processing technique, the proposed single crystal sapphire optical sensor can measure high temperature up to 1600 oC in the harsh environments with high accuracy, corrosion resistance, and long-term measurement stability. Based on the successfully demonstrated sensor prototype in the laboratory, we are confident of the next research step on sensor optimization and scale-up for full field implementations. The goal for this research has been to bring this temperature sensor to a level where it will become commercially viable for harsh environment applications associated with industries. / Ph. D.

The manufacturing process of a photovoltaic Si wafer comprises of first a high temperature heating process to produce a Si ingot from polycrystalline Silicon, which is then cut into bricks and subsequently sawn into wafers using a wire saw. These processes create residual stresses both from the thermal gradient induced by solidification and from either the rolling-indenting or scratching-indenting processes caused by the type of wire saw used. The objective of this research is to study silicon wafer residual stress as a result of the typical industry manufacturing processes and by doing so, better understand the mechanical properties that lead to increased fracture. This thesis aims to quantify the amount of residual stress generated by the solidification/thermal gradient produced during the casting of Si ingots separately from the residual stress generated by the wire sawing process. Samples from industry are used to compare the effects of the manufacturing processes on residual stress in multi-crystalline silicon (mc-Si) wafers including the effects of fixed abrasive diamond wire sawing (DWS) vs. loose abrasive (LAWS) slurry wire sawing used in the wafering process. Near-infrared birefringence polariscopy and polarized micro-Raman spectroscopy are used to study wafer residual stresses within grains and at grain boundaries in mc-Si as a function of etch-depth. While near-infrared birefringence polariscopy allows for the measurement of full-field maximum shear stress, micro-Raman spectroscopy provides decomposition of the stress tensor into both principal and shear in-plane stress components. Consequently, regions of high tensile stress, which are detrimental to the mechanical integrity of the wafer, can be easily identified. In addition to the mechanical characterization, the residual stress produced by the thermal gradient/solidification process for multi-crystalline Si wafers was also correlated to electrical performance of mc-Si wafers using photoluminescence.