Efficient absorption of light is required for a large number of applications such as thermo-photovoltaics,thermal imaging, bio-sensing, thermal emitters, astronomy, and stealth technology. Strong light absorbers found in nature with high intrinsic losses such as carbon black, metal-black, and carbon nano-tubes etc. are bulky, not design-tunable and are hard to pattern for micro- and nano- devices. We developed thin-film, high performance absorbers in the visible, near-, mid-, long-wave - and far-IR region based on a 3 layer metal-dielectric-metal (MDM) structure. We fabricated a 3-layerMDMabsorber with large band-widths in the visible and near IR spectral range without any lithographic patterning. This was the first demonstration in the optical range of the Salisbury Screen, which was originally invented for radar absorption. A Fabry-Perot cavity model depending on the thickness of the dielectric, but also the effective permittivity of the semi-transparent top metal gives calculated spectra that agree well with experiment. Secondly, we fabricated long-wave IR and far-IR MDM absorbers comprising surface patterns of periodic metal squares on the dielectric layer. Strong absorption in multiple bands were obtained, and these depended weakly on polarization and angle of incidence. Though such absorbers had been extensively studied by electrodynamic simulations and experiment in the visible to far- R regions, there existed no analytic model that could accurately predict the wavelengths of the multiple resonances. We developed a theoretical model for these absorbers based on standingwave resonances, which accurately predicts resonance wavelengths for experiment and simulation for the first time. Unlike metamaterial theories our model does not depend on the periodicity of the squares but only on their lateral dimension and the thickness of the dielectric. This feature is confirmed by synchrotron-based IR spectral imaging microscopy of single isolated squares.

No description available.

This thesis concerns technical aspects related to the design and operation of the submillimetre common-user bolometer array 2 (SCUBA-2) instrument, a new wide-field camera for submillimetre astronomy currently undergoing commissioning on the James Clerk Maxwell Telescope on Mauna Kea, Hawaii. Offering unprecedented sensitivity and mapping capabilities, SCUBA-2 is expected to make a major impact in surveys of the sky at submillimetre wavelengths, a largely unexplored part of the electromagnetic spectrum, and provide better understanding of the formation and evolution of galaxies, stars and planets by providing large, unbiased samples of such objects. SCUBA-2 uses large arrays of bolometers, with superconducting transition edge sensors (TESs) as the temperature-sensitive element. TES devices are a relatively new technology, utilising the sharp resistance change between the normal and superconducting states to make a sensitive thermistor. Kilopixel arrays of such devices are multiplexed using superconducting quantum interference devices (SQUIDs). This thesis derives the key detector performance parameters, and presents analysis of engineering data to confirm the detector performance on array scales. A key issue for bolometric instruments for far infrared and submillimetre astronomy is the need to operate at extremely low temperatures in the sub-kelvin and millikelvin ranges to achieve the necessary detector sensitivity. This work describes the design, testing and performance of the liquid cryogen-free millikelvin cryostat, the first such instrument to be deployed for astronomy. Subsequent chapters detail the design and testing of a magnetic shielding scheme for the instrument, an important aspect of the operation of superconducting devices. Based on experience with the construction and testing of this instrument, a number of potential improvements for future instruments are presented and discussed.

No description available.

The thesis investigates the temperature distribution in the chip of an infrared camera caused by its read out integrated circuit. The heat from the read out circuits can cause distortions to the thermal image. Knowing the temperature gradient caused by internal heating, it will later be possible to correct the image by implementing algorithms subtracting temperature contribution from the read out integrated circuit. The simulated temperature distribution shows a temperature gradient along the edges of the matrix of active bolometers. There are also three hot spots at both the left and right edge of the matrix, caused by heat from the chip temperaturesensors and I/O pads. Heat from the chip temperature sensors also causes an uneven temperature profile in the column of reference pixels, possibly causing imperfections in the image at the levels of the sensors. Simulations of bolometer row biasing are carried out to get information about how biasing affects temperatures in neighbouring rows. The simulations show some row-to-row interference, but the thermal model suffers from having biasing heat inserted directly onto the top surface of the chip, as opposed to having heat originate from the bolometers. To get better simulation results describing the row biasing, a thermal model of the bolometers needs to be included. The results indicate a very small temperature increase in the active pixel array, with temperatures not exceeding ten millikelvin. Through comparisons with another similar simulation of the chip, there is reason to believe the simulated temperature increase is a bit low. The other simulation cannot be used to draw any conclusions about the distribution of temperature. / Examensarbetet undersöker den temperaturdistribution som uppkommer i ett chip till en IR-kamera till följd av värmeutvecklingen i dess egna utläsningskretsar. Genom att ha information om temperaturdistributionen är det möjligt att längre fram i utvecklingsprocessen skapa algoritmer som subtraherar bort chippets interna värmetillskott från den termiska bilden. Den simulerade temperaturdistributionen visar att de största temperaturgradienterna uppkommer längs den aktiva pixelmatrisens sidor. Det är även möjligt att se tre varmare områden vid både den vänstra och högra sidan av matrisen skapade av värme från chippets temperatursensorer och I/O-kretsar. Värme från temperatursensorerna påverkar även temperaturen i kolumnen med referenspixlar, vilket kan ge upphov till avvikelser i den termiska bilden i höjd med dessa temperatursensorer. Simuleringar av radvis basering av bolometrar utförs för att få information om hur bolometerbiaseringen påverkar temperaturen i angränsade rader. Simuleringarna visar att det finns störningar mellan rader, men simuleringsmodellen lider av avsaknaden av en termisk bolometermodell och tvingas applicera värme direkt på chipytan istället för att låta värme utvecklas i bolometrarna. För bättre simuleringsresultat innefattande bolometerbiasering bör en termisk bolometermodell inkluderas i simuleringen. Resultaten visar på en mycket liten temperaturökning inom den värmekänsliga aktiva pixelmatrisen, med temperaturökningar inom detta område som inte överstiger tio millikelvin. Genom jämförelser med en liknande simulering av samma chip är det inte omöjligt att dra slutsatsen att temperaturökningen är något låg. Det går inte att dra några slutsatser om temperaturens distribution genom denna jämförelse av simuleringar.

In this study silicon-germanium quantum dots grown on silicon have been investigated. The aim of the work was to find quantum dots suitable for use as a thermistor material. The quantum dots were produced at KTH, Stockholm, using a RPCVD reactor that is designed for industrial production. The techniques used to study the quantum dots were: HRSEM, AFM, HRXRD, FTPL, and Raman spectroscopy. Quantum dots have been produced in single and multilayer structures. As a result of this work a multilayer structure with 5 layers of quantum dots was produced with a theoretical temperature coefficient of resistance of 4.1 %/K.

No description available.

<p>In this study silicon-germanium quantum dots grown on silicon have been investigated. The aim of the work was to find quantum dots suitable for use as a thermistor material. The quantum dots were produced at KTH, Stockholm, using a RPCVD reactor that is designed for industrial production.</p><p>The techniques used to study the quantum dots were: HRSEM, AFM, HRXRD, FTPL, and Raman spectroscopy. Quantum dots have been produced in single and multilayer structures.</p><p>As a result of this work a multilayer structure with 5 layers of quantum dots was produced with a theoretical temperature coefficient of resistance of 4.1 %/K.</p>

Identifying the matter in the universe is one of the main challenges of modern cosmology and astrophysics. An important part of this matter seems to be made of non-baryonic particles. EDELWEISS is a direct dark matter search using cryogenic germanium bolometers in order to look for particles that interact very weakly with the ordinary matter, generically known as WIMPs. An important challenge for EDELWEISS is the radioactive background and one of the ways to identify it is to use a larger variety of target crystals. Sapphire is a light target which can be complementary to the germanium crystals already in use. Spectroscopic characterization studies have been performed using different sapphire samples in order to find the optimum doping concentration for good low temperature scintillation. Ti doped crystals with weak Ti concentrations have been used for systematic X ray excitation tests both at room temperature and down to 30 K. The tests have shown that the best Ti concentration for optimum room temperature scintillation is 100 ppm and 50 ppm at T = 45 K. All concentrations have been checked by optical absorption and fluorescence.<br />After having shown that sapphire had interesting characteristics for building heat-scintillation detectors, we have tested if using a sapphire detector was feasible within a dark matter search. During the first commissioning tests of EDELWEISS II, we have proved the compatibility between a sapphire heat-scintillation detector and the experimental setup.

Thesis (MScEng (Electrical and Electronic Engineering))--Univerity of Stellenbosch, 2011. / ENGLISH ABSTRACT: The design and simulation of hot electron bolometer sensors for the detection of millimeter and terahertz wave radiation is presented. These devices can be used for the formation of images or for spectroscopy in these frequency ranges. Many molecules resonate and have absorption spectra over these ranges, allowing for the identi cation, non-destructively and at a distance, of the constitution of many di erent materials. The penetrating ability of the radiation makes mm-wave and THz wave detectors ideal for security imaging. The design and simulation of these devices predicts performance as mixers and as interferometers. Manufacturing processes used while fabricating these thin lm devices are outlined and experimental results are reported. / AFRIKAANSE OPSOMMING: Hierdie tesis bespreek die ontwerp en simulasie van warm-elektron bolometers vir die waarneming van millimetergolf- en terahertz-straling. Sodanige toestelle kan in bogenoemde frekwensiebereike gebruik word vir beeldvorming of spektroskopie. Aangesien heelwat molekules binne hierdie bande resoneer, kan die samestelling van 'n verskeidenheid materiale oor 'n afstand en op 'n nie-vernietigende wyse gedenti seer word. Die deurdringingsvermo van millimetergolf- en terahertz-straling maak sulke detektors ideaal vir beeldvorming in veiligheidstoepassings. Met die ontwerp en simulasie van hierdie toestelle word gewys wat hul werkverrigting as mengers en interferometers kan wees. Die prosesse wat gebruik is om hierdie dun lmtoestelle mee te vervaardig word ook bespreek en eksperimentele resultate word aangebied.