No description available.

Thesis--Judge Advocate General's School, Charlottesville, Va., 1968. / Typescript. Includes bibliographical references (leaves [121-124]).

Thesis (M.S.)--University of Michigan, 1961.

It was proposed that amorphous alloys may be more resistant to radiation damage than crystalline metals. In crystalline metals neutron induced transmutations lead to the formation of inert gas bubbles. These preferentially nucleate near line defects and result in embrittlement. Amorphous alloys do not contain sites where nucleation can occur preferentially. In this work the growth of argon bubbles in amorphous Cu[50]Zr[50] has been induced by implanting thin specimens with 80keV argon ions at room temperature. The bubble size distribution was obtained over the dose range 5x10[16] to 3x10[17] Ar[+] cm[-2]. Larger bubbles grew in the amorphous alloy than would have been expected to grow in a crystalline metal implanted under the same conditions. It was found that ion bombardment caused surface atoms to be sputtered away from the specimens at a rate of 2.3at.ion[-1]. The sputtering process led to saturation in the amount of argon retained by the material and caused the formation of copper rich near-surface layer. This layer also contained significant amounts of oxygen. Blister formation was induced at the surface of the amorphous alloy by implanting it with 100keV helium ions. At a critical dose of 3x10[17] He[+]cm[-2] a population of very small blisters was formed. These were the result of large bubbles forming just below the specimen surface. As higher doses were used the features joined up to produce large, thin-lidded blisters at a dose of 10[18] He[+] cm[-2]. These observations could not be completely explained in terms of the two popular models of blister formation, where interbubble fracture or lateral stress result in surface deformation.

Measurements of the target thickness dependence of the target x-ray production yield for incident fast heavy ions are reported for thin solid Cu targets as a function of both incident projectile atomic number and energy. The incident ions were F, Al, Si, S, and CI. The charge state of the incident ions was varied in each case to study the target x-ray production for projectiles which had an initial charge state, q, of q = Z₁, q = Z₁ - 1, and q < Z₁ - 1 for F, Al, Si, and S ions and q = Z₁ - 1 and q < Z₁ - 1 for C1 ions. The target thicknesses ranged from 2 to 183 ug/cm². In each case the Cu K x-ray yield exhibits a complex exponential dependence on target thickness. A two-component model which includes contributions to the target x-ray production due to ions with 0 and 1 K vacancies and a three-component model which includes contributions due to ions with 0, 1, and 2 K vacancies are developed to describe the observed target K x-ray yields. The two-component model for the C1 data and the three-component model for the F, Al, Si, S, and C1 data are fit to the individual data for each projectile, and the cross sections for both the target and projectile are determined. The fits to the target x-ray data give a systematic representation of the processes involved in x-ray production for fast heavy ions incident on thin solid targets.

Beginning with its emergence from a high-aspect ratio rectangular aperture, the physics of an intense (current density ≳ 1 mA/cm²), positively charged ion beam is explored in two distinct regions: an electron-free drift region, and a beam plasma containing a large density of space-charge neutralizing electrons. In the drift region, the beam expands due to the mutual inter-ion Coulomb repulsion. Energy, mass, and phase-space density conservation are combined with Poisson's equation to obtain the beam ion density and resulting potential of the diverging beam at any point in 3-dimensional space. Within the beam plasma, the divergence rate is assumed negligible and the beam ion density at the drift/plasma interface taken to be the beam ion density throughout the beam plasma. It is assumed that collisions between beam ions and residual gas molecules, producing a steady generation of electrons and slow residual gas ions, is the dominant mechanism sustaining the beam plasma. Charge is conserved and the energy balance of the plasma examined to obtain the electron and slow-ion densities. Electron, slow-ion, and beam ion densities are then introduced into Poisson's equation to produce a second order partial integro-differential equation requiring a numerical solution. This solution is obtained by expanding the density and potential functions in a complete set of orthogonal (Chebyshev) functions and reducing the differential equation to a system of linear algebraic equations. Calculations in the drift region, for beams of 50, 100 and 500 keV, indicate that all intense beams, regardless of the initial aspect ratio, ultimately relax into the same, near Gaussian profile. In the beam plasma, the theory was applied to a 100 keV, high aspect ratio arsenic beam. The electron density profile is predicted to display a shape similar to that of the beam ions, with the resulting net potential possessing substantial cylindrical symmetry. Both the slow-ion and electron densities and hence the degree of space-charge neutralization, are found to depend strongly on the residual gas density.

An experimental and theoretical analysis of the effects of ion bombardment on Schottky diodes is presented. The experimentally observed shifts in diode performance are compared to the conditions of ion exposure. These experiments show that Schottky diodes exposed to ion beams show decreases in effective barrier heights and ideality factors, as well as increased incidence of premature reverse breakdown. The change in barrier height is found to be proportional to the energy of the individual ions and the total number of ions delivered to the surface. A numerical simulation of the damage process and device performance is developed. The model considers only the effect of ion exposure on the potential distribution within the metal-semiconductor junction. Comparison of experimental and modelled barrier shifts shows fair agreement, suggesting that enhancement of tunnelling currents is the dominant mechanism for barrier lowering.

by Tse Pak Kan. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Tse Pak Kan. / ABSTRACT --- p.i / 摘要 --- p.iii / ACKNOWLEDGEMENTS --- p.iv / TABLE OF CONTENTS --- p.v / LIST OF FIGURES --- p.xi / LIST OF TABLES --- p.xiii / Chapter CHAPTER 1 --- DIAMOND AND DIAMOND-LIKE CARBON FILMS - BACKGROUND --- p.1 / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.2 --- Properties of diamond and diamond like carbon --- p.1 / Chapter 1.2.1 --- Nature of diamond film --- p.1 / Chapter 1.2.2 --- Nature of diamond-like carbon films --- p.3 / Chapter 1.2.2.1 --- Diamond-Like Carbon Films --- p.6 / Chapter 1.2.2.2 --- Diamond-Like Hydrocarbon Films --- p.7 / Chapter 1.3 --- Application of diamond films --- p.8 / Chapter 1.4 --- Application of diamond-like carbon films --- p.9 / References for Chapter1 --- p.11 / Chapter CHAPTER 2 --- BACKGROUND OF THE STUDY --- p.12 / Chapter 2.1 --- Introduction --- p.12 / Chapter 2.2 --- Chemical Vapor Deposition --- p.15 / Chapter 2.2.1 --- CVD techniques --- p.17 / Chapter 2.2.2 --- Drawback of CVD techniques --- p.17 / Chapter 2.3 --- Ion beam Deposition --- p.18 / Chapter 2.3.1 --- Ion beam deposition techniques --- p.18 / Chapter 2.3.2 --- Literature review of ion beam deposition of diamond films --- p.19 / Chapter 2.3.2.1 --- Homoepitaxy of diamond films --- p.20 / Chapter 2.3.2.2 --- Heteroepitaxy of diamond films --- p.21 / Chapter 2.4 --- Objective of the present study --- p.23 / References for Chapter2 --- p.25 / Chapter CHAPTER 3 --- INSTRUMENTATION --- p.27 / Chapter 3.1 --- Introduction --- p.27 / Chapter 3.2 --- Low energy ion beam deposition system (LEIBS) --- p.27 / Chapter 3.2.1 --- Introduction --- p.27 / Chapter 3.2.2 --- Theory --- p.28 / Chapter 3.2.3 --- System Operations --- p.29 / Chapter 3.2.3.1 --- Ion Source --- p.30 / Chapter 3.2.3.2 --- Electrostatic Einzel Focusing Lens --- p.33 / Chapter 3.2.3.3 --- Auxiliary hot electron emitter --- p.33 / Chapter 3.2.3.4 --- Substrate stage with a heater block --- p.35 / Chapter 3.3 --- X-ray photoelectron spectroscopy (XPS) --- p.35 / Chapter 3.3.1 --- Background of XPS --- p.35 / Chapter 3.3.2 --- Theory --- p.35 / Chapter 3.3.3 --- Qualitative analysis --- p.39 / Chapter 3.3.3.1 --- Chemical Shift Peaks --- p.42 / Chapter 3.3.3.2 --- Auger Peaks --- p.43 / Chapter 3.3.3.3 --- Energy Loss Peaks --- p.43 / Chapter 3.3.4 --- Quantitative analysis --- p.44 / Chapter 3.3.4.1 --- Homogeneous system --- p.44 / Chapter 3.3.4.2 --- Layer Thickness Determination --- p.49 / Chapter 3.3.5 --- Instrumentation --- p.51 / Chapter 3.3.5.1 --- Monochromatized X-ray source --- p.53 / Chapter 3.3.6 --- Application to carbon films --- p.54 / Chapter 3.3.6.1 --- Compositional Analysis --- p.54 / Chapter 3.3.6.2 --- Angle-resolved analysis --- p.56 / Chapter 3.3.6.3 --- Energy Loss Structure --- p.58 / References for Chapter3 --- p.61 / Chapter CHAPTER 4 --- THE CHARACTERIZATION OF LOW ENERGY ION BEAM USING A COMPACT FARADAY CUP --- p.63 / Chapter 4.1 --- Introduction --- p.63 / Chapter 4.2 --- Design of the Faraday cup with retarding lens --- p.63 / Chapter 4.3 --- Parameters control of energy distribution of ion beam --- p.66 / Chapter 4.4 --- Basic operation of the retarding lens energy analyser --- p.67 / Chapter 4.5 --- Effect of cathode voltage on energy distribution --- p.68 / Chapter 4.6 --- Effect of anode voltage on energy distribution --- p.71 / Chapter 4.7 --- Effect of sample bias on energy distribution --- p.71 / Chapter 4.8 --- Conclusions --- p.71 / References for Chapter4 --- p.76 / Chapter CHAPTER 5 --- OPTICAL PROPERTIES OF DLC FILMS DEPOSITED --- p.77 / Chapter 5.1 --- Introduction --- p.77 / Chapter 5.2 --- Experimental Procedure --- p.78 / Chapter 5.2.1 --- Sample pretreatment --- p.78 / Chapter 5.2.2 --- Improvement of current density --- p.80 / Chapter 5.2.3 --- Improvement of charging effect --- p.80 / Chapter 5.2.4 --- Experimental Plan --- p.82 / Chapter 5.3 --- Determination of thickness and growth rate of DLC films by alpha-step instrument --- p.83 / Chapter 5.4 --- Determination of microstructures in DLC films by Raman spectroscopy --- p.86 / Chapter 5.5 --- Determination of sp3/sp2 ratios in DLC films by infrared spectroscopy --- p.91 / Chapter 5.6 --- Determination of band gap of DLC by ultraviolet-visible transmittance spectrum --- p.94 / Chapter 5.7 --- Conclusions --- p.97 / References for Chapter5 --- p.99 / Chapter CHAPTER 6 --- GROWTH OF DIAMOND AND DIAMOND-LIKE FILMS USING DIFFERENT ION ENERGIES --- p.100 / Chapter 6.1 --- Introduction --- p.100 / Chapter 6.2 --- Experimental Procedure --- p.100 / Chapter 6.2.1 --- Sample pretreatment --- p.100 / Chapter 6.2.2 --- Improvement of heating source --- p.100 / Chapter 6.2.3 --- Experimental Plan --- p.101 / Chapter 6.3 --- Characterization of carbon films using XPS --- p.102 / Chapter 6.4 --- XPS-EELS of carbon films under different ion beam energy --- p.102 / Chapter 6.5 --- Surface morphology of carbon films --- p.106 / Chapter 6.6 --- Mechanism proposed --- p.108 / Chapter 6.7 --- Conclusions --- p.109 / References for Chapter6 --- p.111 / Chapter CHAPTER 7 --- INVESIGATION OF ADHESION PROPERTIES OF PERFLUORINATED LUBRICANTS ON AMORPHOUS CARBON OR CARBON NITRIDE FILMS --- p.112 / Chapter 7.1 --- Introduction --- p.112 / Chapter 7.2 --- Experimental Procedure --- p.113 / Chapter 7.2.1 --- Description of perfluorinated lubricant used --- p.113 / Chapter 7.2.2 --- Determination of the composition of a-C:H or CNX layer --- p.116 / Chapter 7.2.3 --- Thickness calculation --- p.116 / Chapter 7.3 --- Characterization of PFPE film --- p.121 / Chapter 7.4 --- Effects of molecular weight of PFPE on lubricant adhesion --- p.125 / Chapter 7.5 --- Effects of hydrogen content on lubricant adhesion --- p.128 / Chapter 7.6 --- Effects of end groups of PFPE on lubricant adhesion --- p.128 / Chapter 7.7 --- Verification of film thickness --- p.129 / Chapter 7.8 --- Conclusions --- p.129 / References for Chapter7 --- p.131 / Chapter CHAPTER 8 --- CONCLUSIONS --- p.132

Tam Yi Mei. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2004. / Includes bibliographical references. / Abstracts in English and Chinese. / Abstract --- p.ii / 摘要 --- p.iii / Acknowledgement --- p.iv / Table of Contents --- p.v / List of Figures --- p.ix / List of Tables --- p.xii / Chapter Chapter 1 --- Background of study --- p.1 / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.2 --- Theoretical background of XPS --- p.2 / Chapter 1.2.1 --- Principle of XPS --- p.2 / Chapter 1.2.2 --- Surface sensitivity --- p.6 / Chapter 1.2.3 --- Inelastic Mean Free Path (IMFP) --- p.6 / Chapter 1.3 --- XPS spectral features --- p.7 / Chapter 1.3.1 --- Chemical shift --- p.8 / Chapter 1.3.2 --- Spin orbital splitting (SOS) --- p.8 / Chapter 1.4 --- Quantitative analysis in XPS --- p.10 / Chapter 1.4.1 --- Atomic concentration --- p.10 / Chapter 1.4.2 --- Layer thickness determination --- p.11 / Chapter 1.5 --- The new XPS analysis technique in the present study --- p.14 / Chapter 1.5.1 --- Ion sputtering --- p.14 / Chapter 1.5.1.1 --- Sputtering-induced defects --- p.16 / Chapter 1.5.1.2 --- Effects of ion incident angle --- p.17 / Chapter 1.5.1.3 --- Depth resolution --- p.17 / Chapter 1.5.2 --- Perpendicular detection --- p.19 / Chapter 1.6 --- Objectives of present study --- p.23 / References for Chapter1 --- p.24 / Chapter Chapter 2 --- Instrumentation --- p.28 / Chapter 2.1 --- Introduction --- p.28 / Chapter 2.2 --- X-ray Photoelectron Spectroscopy --- p.28 / Chapter 2.2.1 --- XPS used in the present study --- p.28 / Chapter 2.2.2 --- Vacuum requirements --- p.29 / Chapter 2.2.3 --- X-ray source --- p.29 / Chapter 2.2.4 --- Charge Neutralizer --- p.33 / Chapter 2.2.5 --- Ion sputtering gun --- p.34 / Chapter 2.2.6 --- Electron energy analyzer --- p.36 / Chapter 2.2.6.1 --- Energy resolution --- p.38 / Chapter 2.2.6.2 --- Pass energy --- p.38 / Chapter 2.2.7 --- Electron detector / Multiplier --- p.39 / Chapter 2.3 --- Other analysis techniques for verification --- p.42 / Chapter 2.3.1 --- Energy Dispersive X-ray detector in Scanning Electron Microscope (SEM-EDX) --- p.42 / Chapter 2.3.2 --- X-ray Fluorescence Spectrometer (XRF) --- p.42 / Chapter 2.3.3 --- Rutherford Backscattering Spectrometer (RBS) --- p.43 / Chapter 2.3.4 --- Differential Scanning Calorimeter (DSC) --- p.44 / References for Chapter2 --- p.45 / Chapter Chapter 3 --- Determination of the thickness of the damaged layer --- p.46 / Chapter 3.1 --- Introduction --- p.46 / Chapter 3.2 --- Experimentation --- p.46 / Chapter 3.2.1 --- Instrumentation --- p.46 / Chapter 3.2.1.1 --- Work function calibration --- p.48 / Chapter 3.2.1.2 --- Sputtering ion beam calibration --- p.49 / Chapter 3.2.2 --- Sample preparation --- p.49 / Chapter 3.2.3 --- XPS measurements --- p.51 / Chapter 3.3 --- Results and discussion --- p.53 / Chapter 3.3.1 --- Spectral analysis and peak fitting --- p.53 / Chapter 3.3.2 --- Modeling and damaged layer thickness determination --- p.59 / Chapter 3.3.3 --- TRIM simulation --- p.62 / Chapter 3.4 --- Conclusion --- p.65 / References for Chapter3 --- p.68 / Chapter Chapter 4 --- Applications of the new XPS technique to different materials --- p.70 / Chapter 4.1 --- Introduction --- p.70 / Chapter 4.2 --- Analysis of ceramic --- p.70 / Chapter 4.2.1 --- Experimentation --- p.71 / Chapter 4.2.2 --- XPS results and comparison with other analysis techniques --- p.74 / Chapter 4.3 --- Analysis of metal alloys --- p.77 / Chapter 4.3.1 --- Experimentation for the tin-lead solder bump analysis --- p.78 / Chapter 4.3.2 --- Calibration of XPS sensitivity --- p.78 / Chapter 4.4 --- Development of XPS analysis method for the tin-silver solder bump measurement --- p.82 / Chapter 4.4.1 --- Experimentation --- p.83 / Chapter 4.4.2 --- XPS results --- p.83 / Chapter 4.5 --- Analysis of polymer (Polyacrylic acid) --- p.84 / Chapter 4.5.1 --- XPS results --- p.84 / Chapter 4.6 --- Analysis of Indium Phosphide --- p.90 / Chapter 4.6.1 --- XPS results --- p.92 / Chapter 4.7 --- Analysis of Gallium Arsenide --- p.96 / Chapter 4.8 --- Conclusion --- p.100 / References for Chapter4 --- p.101 / Chapter Chapter 5 --- Conclusions --- p.102

Lau, Yuk Yeung = 重離子核聚變驅動設備的最終壓縮離子束線系統 / 劉鈺暘. / "November 2011." / Thesis (M.Phil.)--Chinese University of Hong Kong, 2012. / Includes bibliographical references (p. 99-101). / Abstracts in English and Chinese. / Lau, Yuk Yeung = Zhong li zi he ju bian qu dong she bei de zui zhong ya suo li zi shu xian xi tong / Liu Yuyang. / Abstract --- p.i / 概要 --- p.iii / Acknowledgements --- p.iv / Chapter 1 --- Introduction --- p.1 / Chapter 2 --- Background --- p.5 / Chapter 2.1 --- Nuclear fusion --- p.5 / Chapter 2.1.1 --- Nuclear fusion as an energy source --- p.5 / Chapter 2.1.2 --- Lawson criterion --- p.7 / Chapter 2.1.3 --- Confinement method --- p.8 / Chapter 2.2 --- Inertial confinement fusion --- p.11 / Chapter 2.2.1 --- Driving beams --- p.11 / Chapter 2.2.2 --- Reactor chamber --- p.14 / Chapter 2.2.3 --- Ignition target --- p.14 / Chapter 2.3 --- Heavy ion inertial confinement fusion --- p.16 / Chapter 2.3.1 --- Beam source and accelerator system --- p.18 / Chapter 2.3.2 --- Drift compression section --- p.20 / Chapter 2.4 --- Beam dynamics --- p.23 / Chapter 2.4.1 --- Transverse dynamics --- p.24 / Chapter 2.4.2 --- Longitudinal dynamics --- p.26 / Chapter 2.4.3 --- Emittance --- p.27 / Chapter 2.5 --- Simulation codes --- p.28 / Chapter 2.5.1 --- Particle in cell simulation --- p.28 / Chapter 2.5.2 --- WARP code --- p.29 / Chapter 3 --- Drift compression beamline system for heavy ion fusion drivers --- p.31 / Chapter 3.1 --- Beam requirements for target implosion in HIF driver --- p.31 / Chapter 3.2 --- Drift compression beamline configuration --- p.33 / Chapter 3.3 --- Simulation example --- p.39 / Chapter 3.4 --- Minimization of centroid offset with bend strategies --- p.42 / Chapter 3.5 --- Neutralized drift section and final focusing --- p.50 / Chapter 3.6 --- "Final pulse length, spot size and emittance" --- p.52 / Chapter 4 --- Longitudinal emittance growth due to non-linear space charge effects --- p.61 / Chapter 4.1 --- Longitudinal emittance growth in the linear regime - Simulation results --- p.62 / Chapter 4.2 --- Longitudinal emittance growth in the linear regime - analytical results --- p.67 / Chapter 4.2.1 --- Beam with uniform radius --- p.68 / Chapter 4.2.2 --- Beam with uniform density --- p.73 / Chapter 4.2.3 --- Comparison with simulations --- p.76 / Chapter 4.2.4 --- Extension to more general beams --- p.78 / Chapter 4.3 --- Longitudinal emittance evolution in the nonlinear regime --- p.79 / Chapter 4.4 --- Target pulse length minimization --- p.86 / Chapter 4.4.1 --- Optimization of drift compression beamline and beam parameters --- p.86 / Chapter 4.4.2 --- Phase space correction with initial voltage waveform tailoring --- p.90 / Chapter 4.5 --- Coupling of Longitudinal and Transverse Emittances --- p.91 / Chapter 5 --- Summary --- p.95 / Bibliography --- p.99