QC 20100623

The rapid neutron-capture process, known as the r-process, is responsible for the origin of about half the stable nuclei heavier than iron observed in nature. Though the r-process is believed to take place in explosive stellar environments and to involve a large number (few thousands) of exotic nuclei, this nucleosynthesis process remains poorly understood from the astrophysics as well as nuclear physics points of view. On the nuclear physics side, the nuclei are too exotic to be studied in the laboratory, even though great efforts are constantly made to extend the experimental limits away from the eta-$stability region. Therefore, theoretical models are indispensable to estimate the nuclear properties of interest in the r-process nucleosynthesis modelling. So far, models used to predict the properties of the exotic nuclei were based on parametrized macroscopic-type approaches the reliability of which is questionable when extrapolating far away from the experimentally known region. This work is devoted to the improvement of nuclear predictions, such as the nuclear ground- and excited-state properties, needed as input data to model the r-process. In order to give the predictions a reliable character, we rely on the microscopic mean-field Hartree-Fock theory based on the Skyrme-type interaction. Pairing correlations play an important role in the description of nuclei, and become essential for nuclei located near the drip lines, since the scattering of pairs of quasi-particles into the continuum increases significantly. In this work, we brought to the Hartree-Fock model the self-consistent treatment of the pairing correlations within the Hartree-Fock-Bogoliubov (HFB) theory. Further improvements are made in the restoration of symmetries broken by correlations added in the form of additional degrees of freedom in the wave function. These include the translational invariance restored by calculating the recoil energy, the particle-number symmetry by an exact projection after variation, the rotational symmetry by an approximate cranking correction and the parity symmetry for reflection asymmetric shapes. In addition, the renormalization of the HFB equations has been studied as well and allows to eliminate the dependence of the total energy with respect to the cutoff energy. The effective nucleon-nucleon interaction is determined by adjusting its parameters on all available experimental masses, with some constraints derived from fundamental nuclear matter properties. A systematic study of the influence on mass predictions for each of the above cited improvements as well as of some uncertainties affecting the particle-hole and particle-particle interactions has been conducted. In spite of quite important differences in the input physics, we find a great stability in the mass predictions for exotic neutron-rich nuclei, though local mass differences can be significant. Each of the Skyrme force derived in the present work has been tested on the predictions of basic ground-state properties (including charge radii, quadrupole moments, single-particle levels), fission barriers and electric dipole $gamma-$ray strengths. The HFB predictions globally reproduce experimental data with a level of accuracy comparable with the widely-used droplet-like models. The microscopic character of the approach followed in the present work makes however the predictions for exotic neutron-rich nuclei involved in the r-process more reliable. The influence of such improved nuclear mass predictions on the r-process abundance distribution is studied in the specific scenario of the prompt supernova explosion mechanism.

A study of defects in semiconductors is vital as defects tend to influence device operation by modifying their electrical and optoelectronic properties. This influence can at times be desirable in the case of fast switching devices and sometimes undesirable as they may reduce the efficiency of optoelectronic devices. ZnO is a wide bandgap material with a potential for fabricating UV light emitting diodes, lasers and white lighting devices only after the realization of reproducible p-type material. The realization of p-type material is greatly affected by doping asymmetry. The self-compensation behaviour by its native defects has hindered the success in obtaining the p-type material. Hence there is need to understand the electronic properties, formation and annealing-out of these defects for controlled material doping. Space charge spectroscopic techniques are powerful tools for studying the electronic properties of electrically active defects in semiconductors since they can reveal information about the defect “signatures”. In this study, novel Schottky contacts with low leakage currents of the order of 10-11 A at 2.0 V, barrier heights of 0.60 – 0.80 eV and low series resistance, fabricated on hydrogen peroxide treated melt-grown single crystal ZnO samples, were demonstrated. Investigations on the dependence of the Schottky contact parameters on fabrication techniques and different metals were performed. Resistive evaporation proved to produce contacts with lower series resistance, higher barrier heights and low reverse currents compared to the electron-beam deposition technique. Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been employed to study the electronic properties of electrically active deep level defects in ZnO. Results revealed the presence of three prominent deep level defects (E1, E2 and E3) in the as-received ZnO samples. Electron-beam deposited contacts indicated the presence of the E1, E2 and E3 and the introduction of new deep level defects. These induced deep levels have been attributed to stray electrons and ionized particles, present in the deposition system during contact fabrication. Exposure of ZnO to high temperatures induces deep level defects. Annealing samples in the 300°C – 600°C temperature range in Ar + O2 induces the E4 deep level with a very high capture cross-section. This deep level transforms at every annealing temperature. Its instability at room temperature has been demonstrated by a change in the peak temperature position with time. This deep level was broad, indicating that it consists of two or more closely spaced energy levels. Laplace-DLTS was successfully employed to resolve the closely spaced energy levels. Annealing samples at 700°C in Ar and O2 anneals-out E4 and induces the Ex deep level defect with an activation enthalpy of approximately 160 – 180 meV. Vacuum annealing performed in the 400°C – 700°C temperature range did not induce any deep level defects. Since the radiation hardness of ZnO is crucial in space applications, 1.6 MeV proton irradiation was performed. DLTS revealed the introduction of the E4 deep level with an activation enthalpy of approximately 530 meV, which proved to be stable at room temperature and atmospheric pressure since its properties didn’t change over a period of 12 months. / Thesis (PhD)--University of Pretoria, 2013. / Physics / unrestricted

Doctorat en sciences, Spécialisation physique / info:eu-repo/semantics/nonPublished