Thesis (Ph. D.)--University of Hong Kong, 1997. / Includes bibliographical references (leaf 306-329).

Thesis (Ph. D.)--University of Hong Kong, 1998. / Includes bibliographical references (leaves 188-198).

Thesis--University of Florida. / Description based on print version record. Typescript. Vita. Includes bibliographical references (leaves 111-115).

Evidence is reported for the formation of carbon-containing contamination products at the copper-tungsten (Cu-W) interface during the metal organic chemical vapor deposition (MOCVD) of copper on tungsten. Cu(II)bishexafluoroacetylacetonate [Cu(hfac)_2] was physisorbed onto lightly oxidized tungsten (WO_x) at 115K, under ultra-high vacuum conditions, and then annealed sequentially to higher temperatures. Copper reduction was observed by 320K. Carbonaceous and carbidic contamination of the WO_x surface was observed, even after sample warming to 625K in UHV. The results indicate that low temperature MOCVD of Cu may be possible, but interfacial contamination from the organic ligand fragmentation is a major concern.

A nitrogen-cooled and an argon-cooled hydrogen flame have been used for the determination of sulfur containing species in solids by molecular emission cavity analysis (MECA). The argon-cooled flame is much more sensitive for the determination of SO₄²⁻. In a solid mixture containing S₈, S²⁻, SO₃²⁻, and SO₄²⁻, the presence of one or more of these sulfur containing species can be determined with the argon-cooled flame. The nitrogen-cooled flame can be useful, for example, in the determination of a mixture of S₈ and SO₃²⁻ in a solid matrix. All these sulfur containing species can be quantitatively determined in the argon-cooled flame in the concentration range from about 10 ppm to 5000 ppm. The variation from 10 percent to 30 percent in the reproducibility of these measurements has been attributed to the non-homogeneity of the solid materials and the small sizes required. Sulfur dioxide has been used for the reduction of ammoniacal copper(II) solutions to solutions containing various copper(I) compounds. These copper(I) compounds can be reduced further to copper metal by varying the solution conditions. The mechanisms of the reactions involved must be understood before they can be successfully used for the large scale production of copper. Porth et al.'s method was followed for the synthesis of Cu(I) intermediates. Several compounds were isolated and their compositions determined. The changes in the relative concentrations of Cu(I) and Cu(II) are also important for unraveling the kinetics and mechanisms of these reactions. A simple spectrophotometric method using 2,9-dimethyl-1,10-phenanthroline was developed to monitor the Cu(I) concentration in solution. The sensitivity of the method is sufficient to determine 10⁻⁵ M Cu(I) in the presence of Cu(II); SO₂, however, interferes with the method. Other possible methods including the use of a mixture of EDTA and 2,9-dimethyl-1,10-phenanthroline were also examined. Evidence is presented for the formation of a ternary complex of copper(I), 2-9-dimethyl-1,10-phenanthroline, and EDTA. The possibility of using a mixture of Cu(II) and 2,9-dimethyl-1,10-phenanthroline to determine SO₂ was tested. Oxygen was found to interfere with this method.

published_or_final_version / Chemistry / Doctoral / Doctor of Philosophy

published_or_final_version / Chemistry / Doctoral / Doctor of Philosophy

published_or_final_version / abstract / Chemistry / Doctoral / Doctor of Philosophy

published_or_final_version / abstract / Chemistry / Doctoral / Doctor of Philosophy

Pei, Congjian = 銅銦硒/硫和銅鋅錫硒/硫一維納米結構的合成與表徵 / 裴聰健. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2011. / Includes bibliographical references (leaves 76-78). / Abstracts in English and Chinese. / Pei, Congjian = Tong yin xi/liu he tong xin xi xi/liu yi wei na mi jie gou de he cheng yu biao zheng / Pei Congjian. / Abstract --- p.i / 論文摘要 --- p.ii / Acknowledge: --- p.iii / Contents: --- p.iv / List of Figures: --- p.vii / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Background --- p.3 / Chapter 2.1. --- Overview --- p.3 / Chapter 2.2 --- Methodology --- p.3 / Chapter 2.2.1 --- General growth strategies for synthesizing nanowires (NWs) --- p.3 / Chapter 2.2.2 --- Synthesis NWs from vapor phase (VLS mechanism) --- p.4 / Chapter 2.2.3 --- Synthesis NWs from solution phase --- p.7 / Chapter 2.2.4 --- Synthesis NWs assist by template --- p.8 / Chapter 2.3 --- Instrumentation --- p.10 / Chapter 2.3.1 --- XRD (X-Ray Diffraction) --- p.10 / Chapter 2.3.2 --- SEM (Scanning Electron Microscopy) --- p.11 / Chapter 2.3.3 --- TEM (Transmission Electron Microscopy) --- p.13 / Chapter Chapter 3 --- Synthesis and characterization of In2Se3 nanowires --- p.17 / Chapter 3.1 --- Overview: --- p.17 / Chapter 3.2 --- Experimental Section: --- p.17 / Chapter 3.3 --- Results and Discussions: --- p.19 / Chapter 3.3.1 --- Results of high temperature (~800oC) synthesized sample --- p.20 / Chapter 3.3.2 --- Results of the low temperature (~600oC) synthesized sample --- p.26 / Chapter 3.3.3 --- Results of thermal evaporate CuInSe2 source: --- p.30 / Chapter 3.4 --- Conclusion: --- p.31 / Chapter Chapter 4 --- Synthesis and Characterization of ID CuInSe2 and CuInS2 structures via template assist method --- p.33 / Chapter 4.1 --- Overview: --- p.33 / Chapter 4.2 --- Experimental: --- p.33 / Chapter 4.2.1 --- Fabrication of CuInSe2 nanowire arrays --- p.34 / Chapter 4.2.1 --- Fabrication of CuInS2 nanowire arrays --- p.35 / Chapter 4.3 --- CuInSe2 nanowire arrays: --- p.36 / Chapter 4.4 --- CuInS2 nanotube &nanowire array: --- p.42 / Chapter 4.5 --- Discussion of the formation mechanisms: --- p.45 / Chapter 4.6 --- Conclusion: --- p.50 / Chapter Chapter 5 --- Synthesis of ordered single-crystalline nanowires arrays of Cu2ZnSnS4 and Cu2ZnSnSe4 --- p.51 / Chapter 5.1 --- Overview: --- p.51 / Chapter 5.2 --- Experimental: --- p.52 / Chapter 5.3 --- Results and discussion: --- p.54 / Chapter 5.4 --- Discussion of the formation mechanisms: --- p.68 / Chapter 5.5 --- Conclusion: --- p.72 / Chapter Chapter 6 --- Summary --- p.73 / Reference: --- p.76