This thesis describes a theoretical and experimental investigation of electromagnetic methods for the detection and measurement of metal fatigue cracks. The available methods are reviewed, with particular attention being paid to mathematical models, and a new model of the electromagnetic field near a metal fatigue crack for small skin-depths is presented which uses a surface impedance boundary condition with the addition of a line source to represent the crack. This leads to a coupled system of two magnetic scalar potentials, one on the crack face which obeys the two-dimensional Laplace equation and one outside the test-piece which obeys the three-dimensional Laplace equation. The behaviour of the field is governed by a parameter m =l/(μ, δ), where l is the size of the field perturbation, μ, is the relative permeability and δ is the skin-depth. When m is small, almost all the flux is concentrated inside the metal and the exterior potential also obeys the two-dimensional Laplace equation, on the test-piece surface. When m is large, the perturbation part of the exterior field has a negligible effect on the field inside the crack so that the crack-face potential may be found by the Born approximation. The general m problem is solved for rectangular and semi-elliptical cracks in flat plates, interrogated by uniform fields, and the solution is verified experimentally. A method for calculating the crack depth from the magnetic field is given, with descriptions of industrial applications. The theory is further developed to find the impedance change in an air-cored circular coil caused by a crack, to find the field near overlapping cracks and to find the field near a crack in an interior corner. Finally, a semi-empirical analysis is presented for a ferrite-cored measuring coil.

The solar energy, or photovoltaic (PV) industry, driven by economic competition with traditional fossil energy sources, strives to produce solar panels of the highest conversion efficiency and best reliability at the lowest production cost. Solar cells based on crystalline silicon are currently the dominant commercial PV technology by a large margin, and they are likely to remain dominant for at least one decade. The problem of improvement mechanical stability of silicon wafers and finished solar cell is one of the most critical for entire PV industry. Mechanical defects in wafer and cells in the form of periphery or internal cracks can be initiated at various steps of the manufacturing process and becomes the trigger for the fracture. There are a limited number of characterization methods for crack detection but only a few of those are able to satisfy PV industry needs in sensitivity of the crack detection incorporated with the analysis time. The most promising are a Resonance Ultrasonic Vibrations (RUV) technique and Photoluminescence (PL) imaging. The RUV method was further developed in this thesis project for fast non-destructive crack detection in full-size silicon wafers and solar cells. The RUV methodology relies on deviations of the resonance frequency response curve measured on a wafer with peripheral or bulk millimeter-length crack when it is compared with identical non-cracked wafers. It was observed that statistical variations of the RUV parameters on a similarly processed silicon wafers/cells with the same geometry lead to false positive events reducing accuracy of the RUV method. A new statistical approach using three independent RUV crack detection criteria was developed and applied to resolve this issue. This approach was validated experimentally. Crack detection using RUV technique was applied to a set of production-grade Cz-Si wafers and finished solar cells from the Isofoton's S.A. (Spain) production line. Cracked solar cells rejected by the RUV method using the statistical approach were imaged with room temperature PL mapping and independently controlled with Scanning Acoustic Microscopy (SAM). A comparison of three independent techniques for crack detection, RUV, PL and SAM, was performed on selected samples. A high accuracy and selectivity of the RUV method to identify mm-size cracks in wafers and cells was confirmed.