This report presents the redesign of the Ultra-Low Energy Implanter (LEION) at the Tandem Laboratory. The primary objectives were to evaluate the current configuration of LEION, identify potential improvements through simulations, and enhance the control software, SIMBA. The studyinvolved detailed simulations of ion trajectories within the LEION system using the SIMION software, focusing on the steering plates and the sample holder. Key findings highlighted limitationsin the current setup, including the steering plates configuration. Which were addressed througha proposed new design that would solve many of LEION’s current shortcomings by incorporating an additional electromagnetic lens into the system. Upgrades to the SIMBA interface aimed tointegrate additional functionalities, streamline beam alignment, and consolidate control systemsto improve user accessibility. The redesigned system demonstrated improved performance insimulations, providing a more even ion distribution and enhanced usability. This project offerssignificant insights into optimising low-energy ion implantation systems and presents a frameworkfor future developments in this field.

This thesis describes experimental investigation of thin films made of diluted Pt 1-x Ni x ferromagnet alloy and Nb-Pt 1-x -Nb Josephson junctions. Such Hybrid Superconductor-Ferromagnet (S-F) Structures are of significant interest because of the new physics involved and possible applications in low temperature and spintronic devices. In many cases, such devices require components with small monodomain ferromagnetic layers, which requires development of specific nano-fabrication techniques. Pt 1-x Ni x alloy is used as the ferromagnet layer due to very good solubility of the two components which results in homogeneous diluted ferromagnet. Systematic analysis of both chemical composition, and ferromagnetic properties of Pt 1-x Ni x thin films for Ni concentrations ranging between 0 and ~70 at.% is performed. The energy-dispersive X-ray spectroscopy (EDS) technique is employed to study chemical composition of Pt 1-x Ni x thin films. To eliminate possible errors during EDS characterization, EDS is used with different electron beam energies, different electron beam incident angles and on the free standing Pt 0.59 Ni 0.41 flakes. Ferromagnetic properties of Pt 1-x Ni x thin films are analyzed by studying the anomalous Hall effect. The Curie temperature of Pt 1-x Ni x films decreases in a non-linear manner with the Ni concentration and has the onset at ~27 at.% of Ni. It is observed that the critical concentration of Ni is lower and the Curie temperature is higher than it had been observed early for the bulk PtNi alloys. The 3D Focused ion Beam Nanosculpturing is used to fabricate nanoscale S-F-S Josephson junctions providing the uniform, monodomain structure of the ferromagnet layer within the junction. The detailed studies of S-F-S Josephson junctions are carried out depending on the size of junction, thickness and composition of the ferromagnet layer. The obtained Fraunhofer modulation of the critical current as a function of in-plane magnetic field serves as evidence for uniformity of the junction properties and monodomain structure of ferromagnet layer. The junction critical current density decreases in spin glass state with increasing Ni concentration. In the ferromagnetic state the maximum current density of the junction starts to increase. The latter is attributed to switching into the pi state as a function of Ni concentration. Simultaneously it is observed that the critical current can completely disappear presumably as the result of stray fields from the F layer in contact leads. The Josephson junction is used as a phase sensitive detector for analysis of vortex states in mesoscopic superconductors. By changing the bias current at constant magnetic field the vortices can be manipulated and the system can be switched between two consecutive vortex states. A mesoscopic superconductor can thus act as a memory cell in which the junction is used both for reading and writing information (vortex).

Transparent conducting oxides (TCOs) are an important class of materials with many applications such as low emissivity coatings, or transparent electrodes for photovoltaics and flat panel displays. Among the possible TCO materials, Al-doped ZnO (AZO) is studied due to its relatively low cost and abundance of the raw materials. Thin films of AZO are commonly produced using physical vapour deposition techniques such as magnetron sputtering. However, there is a problem with the homogeneity of the films using reactive direct current magnetron sputtering (DCMS). This homogeneity problem can be related to the bombardment of the growing film with negative oxygen ions, that can cause additional acceptor defects and the formation of insulating secondary phases. In this work AZO films are deposited by high power impulse magnetron sputtering (HiPIMS), a technique in which high instantaneous current densities are achieved by short pulses of low duty cycle. In the first part of this thesis, the possibility to improve the homogeneity of the deposited AZO films by using HiPIMS is demonstrated. This improvement can be related to the high instantaneous sputtering rate during the HiPIMS pulses, so the process can take place in the metal mode. This allows for a lower oxygen ion bombardment of the growing film, which can help to avoid the formation of secondary phases. Another problem of AZO is the stability of the properties in humid environments. To assess this problem, the degradation of the electrical properties after an aging procedure was investigated for films deposited by both DCMS and by HiPIMS. A method was proposed, to restore the properties of the films, using a low temperature annealing under N2 atmosphere. The improvement of the electrical properties of the films could be related to a diffusion process, where water is diffusing out of the films. Then, the influence of the substrate temperature on the properties of AZO films deposited by HiPIMS was studied. The electrical, optical and structural properties were found to improve with increasing substrate temperature up to 600 ◦C. This improvement can be mostly explained by the increase in crystalline quality and the annealing of defects. Finally, the deposition of AZO films on flexible PET substrates was investigated. The films are growing as a thick porous layer of preferentially c-axis oriented columns on top of a thin dense seed layer. The evolution of the sheet resistance of the films after bending the films with different radii was studied. There is an increase in the sheet resistance of the films with decreasing bending radius, that is less pronounced for thicker films.

One-dimensional (1D) nanostructures (NSs) of Zinc Oxide (ZnO) such as nanorods (NRs) have recently attracted considerable research attention due to their potential for the development of optoelectronic devices such as ultraviolet (UV) photodetectors and light-emitting diodes (LEDs). The potential of ZnO NRs in all these applications, however, would require synthesis of high crystal quality ZnO NRs with precise control over the optical and electronic properties. It is known that the optical and electronic properties of ZnO NRs are mostly influenced by the presence of native (intrinsic) and impurities (extrinsic) defects. Therefore, understanding the nature of these intrinsic and extrinsic defects and their spatial distribution is critical for optimizing the optical and electronic properties of ZnO NRs. However, identifying the origin of such defects is a complicated matter, especially for NSs, where the information on anisotropy is usually lost due to the lack of coherent orientation. Thus, the aim of this thesis is towards the optimization of the lowtemperature solution-based synthesis of ZnO NRs for device applications. In this connection, we first started with investigating the effect of the precursor solution stirring durations on the deep level defects concentration and their spatial distribution along the ZnO NRs. Then, by choosing the optimal stirring time, we studied the influence of ZnO seeding layer precursor’s types, and its molar ratios on the density of interface defects. The findings of these investigations were used to demonstrate ZnO NRs-based heterojunction LEDs. The ability to tune the point defects along the NRs enabled us further to incorporate cobalt (Co) ions into the ZnO NRs crystal lattice, where these ions could occupy the vacancies or interstitial defects through substitutional or interstitial doping. Following this, high crystal quality vertically welloriented ZnO NRs have been demonstrated by incorporating a small amount of Co into the ZnO crystal lattice. Finally, the influence of Co ions incorporation on the reduction of core-defects (CDs) in ZnO NRs was systematically examined using electron paramagnetic resonance (EPR).

In this project the evolution of resistivity under light exposition in materials like rare earth metal-oxy-hydrides is studied. These materials observe a decrease of the resistance when exposed under the light of a 19,5 W power lamp, and slowly tend to return to their initial resistance. After having developed a resistance measurement setup, the photoconductivity of different samples (Gd, YHO) was measured in function of the oxygen concentration and in different conditions such as the face of illumination.

The topic of this thesis is vortex-physics in multi component Ginzburg- Landau models. These models describe a newly discovered class of supercon- ductors with multiple superconducting gaps, and posses many properties that set them apart from single component models. The work presented here relies on large scale computer simulations using various numerical techniques, but also some analytical methods. In Paper I, Type-1.5 Superconducting State from an Intrinsic Proximity Effect in Two-Band Superconductors, we show that in multiband supercon- ductors, even an extremely small interband proximity effect can lead to a qualitative change in the interaction potential between superconducting vor- tices by producing long-range intervortex attraction. This type of vortex interaction results in an unusual response to low magnetic fields, leading to phase separation into domains of two-component Meissner states and vortex droplets. In paper II, Type-1.5 superconductivity in multiband systems: Effects of interband couplings, we investigate the appearance of Type-1.5 superconduc- tivity in the case with two active bands and substantial inter-band couplings. such as intrinsic Josephson coupling, mixed gradient coupling, and density- density interactions. We show that in the presence of these interactions, the system supports type-1.5 superconductivity with fundamental length scales being associated with the mass of the gauge field and two masses of normal modes represented by mixed combinations of the density fields. In paper III, Semi-Meissner state and nonpairwise intervortex interactions in type-1.5 superconductors, we demonstrate the existence of nonpairwise in- teraction forces between vortices in multicomponent and layered supercon- ducting systems. Next, we consider the properties of vortex clusters in a semi-Meissner state of type-1.5 two-component superconductors. We show that under certain conditions nonpairwise forces can contribute to the forma- tion of very complex vortex states in type-1.5 regimes. In paper IV, Length scales, collective modes, and type-1.5 regimes in three- band superconductors, we consider systems where frustration in phase differ- ences occur due to competing Josephson inter-band coupling terms. We show that gradients of densities and phase differences can be inextricably inter- twined in vortex excitations in three-band models. This can lead to very long-range attractive intervortex interactions and the appearance of type-1.5 regimes even when the intercomponent Josephson coupling is large. We also show that field-induced vortices can lead to a change of broken symmetry from U (1) to U (1) × Z2 in the system. In the type-1.5 regime, it results in a semi-Meissner state where the system has a macroscopic phase separation in domainswithbrokenU(1)andU(1)×Z2 symmetries. In paper V, Topological Solitons in Three-Band Superconductors with Bro- ken Time Reversal Symmetry, we show that three-band superconductors with broken time reversal symmetry allow magnetic flux- carrying stable topolog- ical solitons. They can be induced by fluctuations or quenching the system through a phase transition. It can provide an experimental signature of the time reversal symmetry breakdown. / <p>QC 20130109</p>

Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). This makes III-nitride materials suitable for high-efficient and energy-saving optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes (LDs). The Nobel Prize in Physics 2014 was awarded for the invention of efficient GaN blue LEDs, which further accelerated the research in the field of group III-nitride materials. GaN and related alloys are also suitable for high-temperature, high-power and high-frequency electronic devices with performance that cannot be delivered by other semiconductor technologies such as silicon (Si) and gallium arsenide (GaAs). For example, GaN-based high electron mobility transistors (HEMTs) have been widely adopted for radio frequency (RF) communication and power amplifiers, high-voltage power switches in radars, satellites, and wireless base stations for 5G.  Recently, nitrogen (N)-polar group-III nitrides have drawn much attention due to their advantages over their metal-polar counterparts in e.g. HEMTs. These include feasibility to fabricate ohmic contacts with low resistance, an enhanced carrier confinement with a natural back barrier, and improved device scalability. Despite intensive research, the growth of micrometer-thick high-quality N-polar GaN based materials remains challenging. One of the major problems to develop device-quality N-polar nitrides is the high surface roughness, which results from the formation of hexagonal hillocks or step-bunching. Another significant hurdle is the unintentional polarity inversion, which reduces the crystalline quality and prohibits device fabrication.  This licentiate thesis focuses on the development of N-polar AlN and GaN heterostructures on SiC substrates for HEMT RF applications. The overall aim is to exploit the advantages of the hot-wall MOCVD concept to grow high-quality N-polar HEMT structures for higher operational frequencies and improved device performance. In order to achieve this goal, special effort is dedicated to understanding the effects of growth conditions and substrate orientation on the structural properties and polarity of AlN, GaN and AlGaN grown by hot-wall MOCVD. N-polar AlN nucleation layers (NLs) with layer by layer growth mode and step-flow growth mode can be achieved on on-axis and 4_ offaxis SiC (000¯1), respectively, by carefully controlling V/III ratio and growth temperature. Utilizing scanning transmission electron microscopy (STEM) we have established a comprehensive picture of the atomic arrangements, local polarity and polarity evolution in AlN, GaN/AlN and AlGaN/GaN/AlN in the cases of low-temperature and high-temperature AlN NLs both for on-axis and off-axis substrates. We have shown that typically employed methods for polarity determination using potassium hydroxide wet etching could not provide conclusive results in the case of mixed-polar AlN as Al-polar domains may be easily over-etched and remain undetected. Atomic scale electron microscopy is therefore needed to accurately determine the polarity. We further have developed growth strategy and have optimized the epitaxial process for N-polar GaN, and have demonstrated high quality N-polar AlGaN/GaN/AlN heterostructures. / <p>Additional funding agencies: Chalmers University of technology; ABB; Ericsson; Epiluvac; FMV; Gotmic; Saab; SweGaN; UMS; Swedish Foundation for Strategic Research under Grants No. FL12-0181, No. RIF14-055, and No. EM16-0024; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University, Faculty Grant SFO Mat LiU No.2009- 00971.</p>

Formamidinium lead iodide perovskite (FAPI) holds promise to be used in high–efficiency solar cells. A comprehensive understanding of the immediate surface properties of this material can provide insights into its interaction with other materials and guide future engineering of its interface with other constituents of the solar cell. In this thesis, the orientations of the formamidinium cations on flat FAI and PbI2 terminated (001) surfaces of the of α–FAPI were studied with classical and ab initio molecular dynamics simulations at a temperature of 300 K. The cations on the FAI terminated surface displayed a preference to lie flat on the surface, while the cations near the PbI2 terminated surface displayed a preference to be oriented in such a way that the molecular planes were perpendicular to the surface. Average near edge X–ray fine structure (NEXAFS) spectra at the carbon and nitrogen K–edges were simulated from the trajectories of the FAI terminated structure and compared with existing experimental spectra obtained from a clean FAPI surface under ultrahigh vacuum. By comparing the experimental and calculated NEXAFS spectra it was observed that the distribution of formamidinium orientations which contribute to the experimental NEXAFS spectra is different from the one seen in the outermost FAI layer from the molecular dynamics simulation. This observation can be explained by the finite probing depth of the X–ray or the fact that the surface is not perfectly FAI terminated in the experiment. The more uniform distribution of formamidinium orientations one layer below the surface resulted in simulated NEXAFS spectra which were more similar to the experimental ones.

The magneto-optical Kerr effect (MOKE) describes the change in polarization of light reflected from a magnetic surface. This change is proportional to the magnetization and depends on the wavelength of light. Because of these properties, MOKE has found use as a tool to probe magnetism in matter. The aim of the project is to develop an experimental setup to measure the wavelength dependence of MOKE. This is of interest as it can be used to determine the wavelength that gives the largest change in polarization to optimize measurements and provide information about the electronic structure of the sample. Initially, the experimental setup used a laser with tunable wavelength. However, it turned out to be pulsed, which made it incompatible with the rest of the setup. Therefore, three lasers with fixed wavelengths were instead used. The setup was evaluated by measuring the Kerr rotation and hysteresis curves for three Ni samples with varying thicknesses and a TbCo sample, at three different wavelengths. The primary finding was that the setup is not suitable for spectroscopic measurements due to the inability to compare values obtained at different wavelengths. To facilitate spectroscopic measurements, a new light source with tunable wavelength is required. The setup is capable of measuring hysteresis curves.

Transition Metal Nitrides (TMN) are of considerable importance for the industry and have gathered a great deal of interest in the scientific community, mostly due to their unique physical and mechanical properties. To increase the understanding of what enables them to have such extraordinary properties requires the study of lattice dynamics and their phonon dispersion. In this thesis, the transition metal nitride, TaN, is studied extensively along with preliminary results for NbN. The primary tool for this investigation is simulations. Computational methods, such as ab initio Molecular Dynamics (AIMD) and the Temperature Dependent Effective Potential (TDEP) method are used to generate phonon spectra and to compute the lattice thermal conductivity. The results indicate that TaN crystal structure stabilizes dynamically at much lower temperatures than previously established with other methods. The average linear thermal expansion coefficient of TaN is a = 9.0 * 10-6 K-1, which is consistent with other TMN. The phonon-phonon lattice thermal conductivity of TaN follows a similar behaviour as for other TMN. Preliminary result for NbN suggests a behaviour at lower temperatures that are similar to that observed for TaN. However, further investigations are required to pinpoint TaN and NbN transition temperatures more exactly and include effects, such as electron-phonon scattering and isotope effects for a better estimation of the lattice thermal conductivity.