Spin filtering properties of novel GaNAs alloys are reported in this thesis. Spin-dependent recombination (SDR) in GaNAs via a deep paramagnetic defect center is intensively studied.  By using the optical orientation photoluminescence (PL) technique, GaNAs is shown to be able to spin filter electrons injected from GaAs, which is a useful functional property for integratition with future electronic devices.  The spin filtering ability is found to degrade in narrow GaNAs quantum well (QW) structures which is attributed to (i) acceleration of band-to-band recombination competing with the SDR process and to (ii) faster electron spin relaxation in the narrow QWs.  Ga interstitial-related defect centers have been found to be responsible for the SDR process by using the optically detected magnetic resonance (ODMR) technique. The defects are found to be the dominant grown-in defects in GaNAs, commonly formed during both MBE and MOCVD growths.  Methods to control the concentration of the Ga interstitials by varying doping, growth parameters and post-growth treatments are also examined.

Thin films are structures with thicknesses ranging from the atomic scale to the mesoscale that are used to alter the properties of a surface and/or serve as functional layers in devices. Thin metal films deposited from the vapor phase on weakly-interacting substrates, including oxides (TiO2, ZnO, SiO2 etc.) and two-dimensional (2D) materials (graphene, MoS2, etc), are relevant for a wide array of technological applications, such as optical devices, nanoelectronic components, sensors, and catalytic devices. The weak interaction between deposit and surface in these film/substrate combinations leads to three-dimensional (3D) metal-layer morphological evolution in an uncontrolled manner; which often constitutes an important challenge toward integrating metal layers in key enabling devices. Thus there is a need for efficient growth manipulation strategies, such that metal films with controlled 3D and 2D microstructures and morphologies can be synthesized. Surfactants, i.e., minority metal, non-metal, and gaseous species which are deployed to the growing surface together with film-forming species, have been shown to enable growth manipulation in a multitude of homo- and heteroepitaxial metal/metal and semiconductor/semiconductor systems. This work explores the viability of N2 and O2 surfactants to manipulate growth in model weakly-interacting Ag/SiO2 and Au/SiO2 systems. Au and Ag are deposited by direct current (DC) magnetron sputtering on Si substrates covered with a 500 nm thick thermally grown SiO2 layer. Gaseous N2 and O2 surfactants are introduced to the sputtering atmosphere either continuously during deposition or at well-defined points during growth, such that specific film-formation stages as targeted. Using a combination of in situ/real-time diagnostic tools and ex situ characterization techniques, it is shown that O2 and N2 cause Ag and Au, respectively, to grow flatter, i.e., 2D growth morphology is promoted. Moreover, by deploying surfactants selectively during early or late film growth stages and studying their effect on film morphological evolution, it is concluded that N2 and O2 effectively suppress the rate of island coalescence promoting formation of flatter films. The overall results of this study are the first step toward establishing an atomic-scale understanding of the effect of surfactants on morphological evolution of metal films on weakly-interacting substrates. The knowledge generated herein is relevant for designing growth manipulation strategies in a wide range of technologically important film/substrate systems.

In the European XFEL, electrons bunches are accelerated up to 20 GeV and thenenter undulators where coherent X-rays are produced which can be used for imaging atva molecular level. Electrons may stray from the path and hit the permanent magnets inthe undulators. It is well known that ionizing radiation can affect the magnetic characteristics of permanent magnets. The undulators are therefore equipped with a type of semiconductor dosimeters, RADFETs, so that the potential damage from ionizing radiation to the magnets can be measured and corrected for. It is also known that heat will be generated from air-coils in the accelerator which can change the ambient temperature around the dosimeters up to 25 K. All semiconductor technology is highly susceptible totemperature. This report investigates the fading characteristics of the RADFET under different temperatures and times after irradiation. It also investigates the dose responseunder dierent temperatures and estimates the magnitude of errors in measured dose which can be expected if temperatures are not accounted for. It is seen that a delta T of a few K can have a large impact on RADFETs' ability to both record and retain dose. A strong time dependence is also seen. The fading is the largest during irradiation andthen slows down exponentially, stabilizing after 1 to 2 months. An increase from 20 deg C to 26 deg C will increase the fading by 2 Gy/h during irradiation, and 0.015 Gy/h weeks afterirradiation. It is estimated that dose measurements at XFEL can have errors of up to 14% if long-term fading is not accounted for. A model for estimating long-term fading as a function of temperature is proposed.

Recent experimental and theoretical studies have found evidence of coupled interactions between magnons and phonons. The aim of this study is to construct a model of coupled magnons and phonons, as well as analysing their frequency spectrum. The model is derived by quantizing spin and lattice degrees of freedom, and the frequency spectrum is derived by solving the equations of motion. We found that both the strength and the composition of the coupled interactions affect the frequencies of magnons and phonons, with emphasis on the magnons. Their frequencies are imaginary close to the center of the Brillouin zone, which opens questions for future research.

This project focused on the study of self-assembling systems that can be inuenced by an external magnetic field, following the PhD research of Hauke Carstensen. My role was to study the behavior of beads and to optimize the tunable parameters so that the main force driving the dynamics of the system is the magnetic dipolar interaction between beads. To make sure that no other force plays an important role, we checked a number of things, the most problematic of which is flocculation in the colloid, which may happen if some beads get stuck to each other; to prevent them from aggregating we have to make sure that they have a large zeta potential, which will result in an electrically repulsive force between beads and will thus increase the stability of the colloid. We also have to make sure that other forces in the sample do not exceed the magnitude of magnetic forces between particles; examples of such forces can be the drag experienced while moving in the viscous ferrofluid, the gravity force or the random thermal movement of the molecules in the fluid. In order to study these efects, I measured the zeta potential of the magnetic and non-magnetic beads and later I added a surfactant compound (SDS) to our sample in order to increase said potential.

Multislice HAADF - STEM image simulations of SrTiO 3 are performed at 300 K.The procedure of these simulations and the used techniques are briefly ex-plained and reasoned. The results are presented and discussed in a conciseway and in an attached paper a comparison to experimental images is made.The paper proofs that the electron optical setup developed in Dresden is indeed capable of producing atomic-sized EVBs, a precondition for measuring EMCD with atomic resolution.

Molybdenum disulfide (MoS2) has been demonstrated to be a potential catalyst in the hydrogen evolution reaction (HER). Due to its highly active edge site, abundance, and low cost, it rivals Pt. However, the potential activity of the MoS2 basal plane has largely been ignored. The physical characteristics of MoS2 and its corresponding band structure change significantly with decreasing thickness, especially at the monolayer limit. Thus, an investigation on the thickness dependence may provide important insights into the MoS2 basal plane activity. In this thesis, the layer dependent electrocatalytic performance is investigated with mono-, bi- and multilayer MoS2 based individual nanodevices. Three conclusions were reached. (1) Monolayers showed exchange current densities more than one order of magnitude higher than that of the multilayers, 0.12 mA/cm2 and 8.7 mA/cm2, respectively. Furthermore, the onset potential of the monolayer was several hundred millivolts lower than that of the multilayer, about 0.2 V vs RHE for the monolayer versus 0.5 V vs RHE for the multilayer. The Tafel slope of 100-200 mV/dec revealed that the rate limiting step was the adsorption of hydrogen. (2) Interestingly, the bilayer sample exhibited an increase in its exchange current density from 0.3 mA/cm2 to 8 mA/cm2 when cycled extensively. This is suspected to be caused by intercalation of hydrogen between the atomic layers. (3) Additionally, the back-gate voltage is applied to tune the Fermi level of the material and the catalytic performance. It was found that the back-gate voltage induces an irreversible change in all samples, increasing the exchange current density by an order of magnitude. The superior basal plane performance of the monolayers to that of the multilayers reveals a new way to optimize the performance of MoS2 as a HER catalyst. In addition, the results above illuminate the yellow brick road to potential improvements in other layered materials as well.

The possibility to change magnetic anisotropy of amorphous TbCo films from out-of-plane to in-plane has been investigated. The effects of TbCo film's thickness and composition on the magnetic anisotropy were investigated together with the effects of growing the TbCo films on a SmCo seed layer. This was studied by sputtering TbCo films of composition Tb_xCo_(100-x) x=16,18,20,22 and 24, with thickness ranging between 2-20 nm, with and without the presence of a 20 nmSm_15Co_85 seed layer. All films were grown in a 130 mT magnetic in-plain field to imprint an in-plane anisotropy. The structure and composition of the films were examined with Rutherford backscattering spectrometry, X-ray reflectivity, and Grazing incidence X-ray diffraction. The magnetic properties of the films were studied with magneto-optic Kerr effect measurement, vibrating sample magnetometer, Kerr microscopy and magnetic force microscopy. The magneto-optic Kerr effect measurement showed that it was possible to change TbCo film's preferred magnetization direction from out-of-plane to in-plane by reducing the film thickness. The SmCo layer made it easier for theTbCo films to change preferred magnetization direction from out-of-plane to in-plane.

In this work potentials of carbon nanomaterials calculated with Density Functional Theory (DFT) are approximated using an Artificial Neural Network (ANN). Previous work in this field has focused on estimating potential energies of bulk structures. We investigate the possibility to approximate both the potential energies and the forces of periodic carbon nanotubes (CNTs) and fullerenes. The results indicate that for test structures similar to those in the training set the ANN approximates the energies to within 270 meV/atom (&lt; 3.7% error, RMSE 40 meV/atom) and the forces to within 7.5 eV/Å (&lt; 73% error, RMSE 1.34 eV/Å) per atom compared with DFT calculations. Furthermore, we investigate how well the ANN approximates the potentials and forces in structures that are combinations of CNTs and fullerenes (capped CNTs) and find that the ANN generalizes the potential energies to within 100 meV/atom (&lt; 1.1% error, RMSE 78 meV/atom) and the forces to within 6 eV/Å (&lt; 60% error, RMSE 0.55 eV/Å) per atom. The ANN approximated potentials and forces are used to geometry optimize CNTs and we observe that the optimized periodic CNTs match DFT calculated structures and energies while the capped CNTs result in comparable energies but incorrect structures compared to DFT calculations. Considering geometry optimization performed with ANN on CNTs the errors lie within 170 meV/atom (&lt; 1.8% error) with an RMSE of 20 meV/atom. For the geometry optimizations of the capped CNTs the errors are within 430 meV/atom (&lt; 5.5% error) with an RMSE of 14 meV/atom. All results are compared with empirical potentials (ReaxFF) and we find that the ANN approximated potentials are more accurate than the best tested empirical potential. This work shows that machine learning may be used to approximate DFT calculations. However, for further applications our conclusion is that the error of the estimated forces must be reduced further. Finally, we investigate the computing time (number of core hours) required and find that the ANN is about two orders of magnitude faster than DFT and three to four orders of magnitude slower than ReaxFF. For the unseen data the ANN is still around 2 orders of magnitude quicker than the DFT but here it is around 4 order of magnitude slower than ReaxFF. / <p>Supervisors: Daniel Hedman and Fredrik Sandin</p> / F7042T - Project in Engineering Physics

Topological insulators and topological crystalline insulators are materials that have a bulk band structure that is gapped, but that also have toplogically protected non-gapped surface states. This implies that the bulk is insulating, but that the material can conduct electricity on some of its surfaces. The robustness of these surface states is a consequence of time-reversal symmetry, possibly in combination with invariance under other symmetries, like that of the crystal itself. In this thesis we review some of the basic theory for such materials. In particular we discuss how topological invariants can be derived for some specific systems. We then move on to do band structure calculations using the tight-binding method, with the aim to see the topologically protected surface states in a topological crystalline insulator. These calculations require the diagonalization of block tridiagonal matrices. We finish the thesis by studying the properties of such matrices in more detail and derive some results regarding the distribution and convergence of their eigenvalues.