Nürnberg, Universiẗat, Diss., 2002--Erlangen.

Th. doct.-ing.--Électronique--Grenoble--I.N.P., 1980. N°: DI 174.

Made available in DSpace on 2014-10-09T12:28:51Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T13:57:06Z (GMT). No. of bitstreams: 0 / Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia) / IPEN/D-MPLO / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP; Faculdade de Odontologia, Universidade de Sao Paulo, Sao Paulo

Terahertz source technology has been an active area of research for a number of years. This has helped develop continuous wave solid-state sources that are highly desirable in a wide range of applications spanning from Earth science to medical science. However, even with advances in terahertz technology, the generation of fundamental source power at these frequencies is still challenging. Promising electronic solid-state devices fall short in overcoming source power shortage due to electronic breakdown mechanism and fabrication limits at terahertz frequencies. The fundamental physical limitation of photonic devices, such as low photon energy, force cryogenic operation which at times is impractical. Schottky diode frequency multipliers often offer a very practical solution for generating continuous wave radiation based on solid-state technology. This harmonic source technology is today a most certain candidate for many applications where compactness and room temperature operation is desired. However, despite of all the advances in Schottky diode fabrication and their use in frequency multiplication, output power falls rapidly with increasing frequency. Thermal constrains, fabrication limits, assembly errors and parasitic losses all constitute changes that affect the performance of these devices and make it difficult to reproduce experimental data. To overcome these problems and progress towards the generation of milliwatts of power at terahertz frequencies, the study of existing methods to generate and handle high power is necessary. In the first part of the thesis, the design, fabrication and development of two Schottky diode-based frequency doublers is discussed. The work focuses on the generation of high-power sources that are capable of handling higher input powers while maintaining good thermal efficiencies. A detailed study into the machining tolerances, assembly errors and temperature effects are evaluated for the frequency doublers. High frequency effect such as velocity saturation is also addressed. Depending on the design frequency and power handling, two different circuit configurations are employed for the frequency doublers. While the high-power 80/160 GHz frequency doubler used a discrete flip-chip diode configuration, the 160/320 GHz frequency doubler employed an integrated diode membrane to mitigate sensitivity issues encountered during assembly and enable correlation between simulated and measured data. The second part proposes the use of millimeter-wave Schottky diode-based radiometers for imaging of composites samples. The focus of this experiment is the introduction of an alternate EM inspection method with the use of broadband Schottky diode components. This technique combines two different fields {--} non-destructive testing and radiometry, which presents a potentially new and interesting area for research. Since no single method can qualify to be the most accurate for all inspections, and with the future integration bringing down manufacturing costs of high frequency components, this demonstration presents a new approach to consider for future material imaging and evaluation experiments.

Gallium Nitride (GaN) is considered a very promising material for use in the field of power devices as its application in power systems would result in a significant increase in the power density, reduced power losses, and the potential to operate at high frequencies. The wide bandgap of the material allows a high critical electric field to be sustained which can lead to the design of devices with a shorter drift region, and therefore with lower on-state resistance, if compared to a silicon-based device with the same breakdown voltage. The use of an AlGaN/GaN heterostructure allows the formation of a two-dimensional electron gas (2DEG) at the heterointerface where carriers can reach very high mobility values. These properties can lead to the production of High Electron Mobility Transistors (HEMTs) and Schottky barrier diodes with superior performance, even when compared to devices based on state-of-the-art technologies such as Silicon Carbide or superjunctions. Furthermore, epitaxial growth of GaN layers on silicon wafers allows a significant reduction in the production cost and makes these devices competitive from a price perspective. This thesis will deal with a variety of topics concerning the characterization, design and optimization of AlGaN/GaN HEMTs and Schottky diodes with a 600 to 650V rating. Discussion will span several topics from device cross-section physics to circuit implementation and will be based on both experimental results and advanced modelling. More specifically, the thesis is concerned with the characterization of AlGaN/GaN Schottky diodes and extraction of their main parameters such as ideality factor, barrier height and series resistance. A thorough investigation of their reverse recovery performance and a comparison to competing technologies is also given. Several topics which concern the operation of AlGaN/GaN HEMTs are then discussed. The underlying physics of p-gate enhancement mode transistors are analysed followed by a discussion of the challenges associated with the implementation of these devices at a circuit level. Finally, a comparison of the performance of a specific area-saving layout (Bonding pad over active area) and a conventional design is given. The thesis aims to significantly enhance the understanding of the behaviour of these devices to enable better or new commercial designs to emerge.

Made available in DSpace on 2014-10-09T12:55:05Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:07:12Z (GMT). No. of bitstreams: 0 / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Dissertacao (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP / FAPESP:06/52787-0

Ionic-type transistors are important devices for precise chemical control and biosensing applications. Previous work by Tybrandt et al. has demonstrated a novel approach to constructing an ionic transistor using conducting polymers poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and quarternized- polyvinyl benzyl chloride (q-PVBC). This approach could be combined with the 3D stamp method of generating concentration gradients in supported lipid bilayers (SLBs) as shown by Liu et al. to create a charged lipid-based ionic polar junction transistor. An electric potential applied across the SLB would drive charged lipids towards the opposite electrode, thus generating current flow across the SLB. Incorporation of a charged-lipid functionalized PEDOT derivative as demonstrated by Johansson et al. would allow a longer period of current flow before charge carriers are depleted. Such a device could offer novel approaches to biosensing.

A terapia laser é um excelente procedimento clínico coadjuvante no tratamento endodôntico pela sua capacidade de promoção e melhoria da limpeza e da desinfecção do sistema endodôntico, porém existem poucos estudos sobre a possível utilização desta nova tecnologia nas situações clínicas de desobturação. O objetivo deste estudo foi avaliar in vitro o uso do laser de diodo (810nm, no modo contínuo) na desobturação da guta percha e do cimento AH Plus, utilizando ou não solvente químico (eucaliptol). Canais radiculares obturados tiveram o seu material obturador irradiado pelo laser de diodo de 810 nm (ZAP SOFTLASE, ZAP LASERS). A temperatura externa radicular durante a irradiação foi verificada no terço apical de 12 amostras utilizando o sistema de medida de temperatura. Observou-se um aumento de temperatura que variou de 2,47 a 9,35 ºC. Raízes foram divididas aleatoriamente em 4 grupos com 10 espécimes, variando o parâmetro de irradiação laser e a utilização do eucaliptol. Os grupos foram: Grupo I = irradiação (1,0 W) sem a utilização de solvente, Grupo II = irradiação (1,5 W) sem o uso de solvente, Grupo III = irradiação (1,0 W) + solvente, Grupo IV = (1,5 W) + solvente. As amostras foram radiografadas no sentido V-L e M-D, antes e após o retratamento, digitalizadas, e as áreas remanescentes de guta percha foram calculadas com o auxílio de programas de computador: Adobe Photoshop e ImageLab. Os resultados dos espécimes dos grupos: G1xG3; G1xG4; G2xG4 apresentaram diferença estatística. O modelo experimental selecionado permitiu verificar que a propagação da temperatura durante o procedimento não excedeu 10ºC e que a presença do solvente possibilitou a remoção de maior quantidade de material obturador auxiliando o processo de desobturação quando do emprego da irradiação com laser de diodo. / The laser therapy is an excellent adjunct clinical procedure in endodontic treatment in order to improve the cleaning and disinfection of the root canal system; however few studies in the literature investigated the possible use of this new technology in the clinical situations of retreatment. The objective of this study was to evaluate in vitro the use of the diode laser (810nm, continuous mode) in the removal of gutta-percha and AH Plus sealer from the root canal, with or without the use of a chemical solvent (eucalyptol). Root canal filling materials were irradiated by 810 nm diode laser (ZAP SOFTLASE, ZAP LASERS). The temperature changes at the outer root surface were verified in the apical third of 12 samples during the irradiation. Temperature increase from 2.47 to 9.35 ºC was observed. The specimens were randomly divided in 4 groups of 10 roots each, varying the parameter of laser irradiation and the use of eucalyptol. The groups were assigned as follow: Group I = irradiation (1.0 W) without the solvent use, Group II = irradiation (1.5 W) without the solvent use, Group III = irradiation (1.0 W) + solvent, Group IV = (1.5 W) + solvent. Mesio-distal and buccolingual radiographs were taken before and after retreatment and the area of remaining gutta-percha in the root canals was determined with the aid of: Adobe Photoshop and ImageLab softwares. The groups: G1xG3; G1xG4; G2xG4 presented statistical differences.Based on the methodology used, it was verified that the temperature did not exceed 10ºC and that the presence of the solvent made it possible to remove large amounts of root canal filing material, aiding the desobturation process when used in association to the diode laser.

Made available in DSpace on 2014-10-09T12:28:51Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T13:57:06Z (GMT). No. of bitstreams: 0 / Dissertacao (Mestrado Profissionalizante em Lasers em Odontologia) / IPEN/D-MPLO / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP; Faculdade de Odontologia, Universidade de Sao Paulo, Sao Paulo

Made available in DSpace on 2014-10-09T12:55:05Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:07:12Z (GMT). No. of bitstreams: 0 / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Para muitas aplicações de um laser, é necessário um feixe com boa qualidade no modo fundamental. Neste trabalho são investigadas as condições para se obter alta eficiência e qualidade do feixe, otimizando o acoplamento do modo fundamental com a região do meio ativo excitada pelo bombeamento, por meio da utilização de cavidades inovadoras. A maior eficiência já reportada para um laser de Nd:YLF com oscilação em 1053 nm sob bombeamento transversal por diodo é demonstrada usando uma cavidade compacta baseada em uma reflexão interna total na face de bombeamento, obtendo-se uma potência máxima de saída multimodo de 9,5W para 21W de bombeamento, o que corresponde a 45% de conversão óptica. Uma melhora significativa na qualidade do feixe é demonstrada por meio do desenvolvimento de uma cavidade com duas reflexões no meio ativo, obtendo-se uma potência máxima no modo fundamental de 6,9W com fator de qualidade M2 do feixe igual a 1,16 x 1,05 nas direções horizontal e vertical, respectivamente. / Dissertacao (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP / FAPESP:06/52787-0