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No description available.

This project involves the study of optical properties of polymers doped with TRIMM (transparent refractive index matched micro-particles), and their uses in light guides. The refractive index difference between dopant and host material is small (0.02), so forward transmittance is high, and losses due to backscattering are negligible. Flexible polymer optical fibre (POF) and polymethylmethacrylate (PMMA) rods are being incorporated into an increasing range of lighting and light mixing applications. For energy efficient mixing of red, green and blue (RGB) light-emitting diodes (LEDs) to produce white light and a range of other colours, light is transmitted from the end of a light guide ('endlight'). A major problem here is solved, namely the achievement of uniform illumination, simultaneously with low losses from scattering. Light output from RGB LEDs is shown to be completely mixed by short TRIMM-doped light guides. Alternatively, long lengths of TRIMM-doped POF can be used for 'side-light'. The concentration of TRIMM for these is chosen such that light is emitted from the side walls of the guide to give even illumination along its length. A geometrical method of ray tracing in particle-doped rectangular and cylindrical light guides is derived, and Monte Carlo ray tracing simulations performed for undoped and TRIMM-doped light guides. The evolution of the distribution of ray angles, internal and external to a light guide, with propagation distance are studied. Computer simulations of angular distribution of light emitted from the wall of POF agree with measurements performed using a photogoniometer. Simulations and measurements of light output intensity and colour from RGB LED arrays when projected from the end of a mixing rod, are also presented. Colour calculations agree with photometric measurements of RGB LED output from clear and TRIMM-doped PMMA mixing rods. Results of transmittance measurements and computer simulations show that light losses are almost entirely due to Fresnel reflectance from the entrance and exit surfaces of the rods. Photogoniometer measurements of the angular distribution of light from LEDs are used as a basis for LED source models used in ray tracing simulations. Results of an investigation comparing the effect of using a smoothed LED source model instead of measurement-based models on simulated light output distributions are presented. The light output from LEDs can have sudden peaks in intensity at certain angles, resulting in distinctive patterns with clear colour separation, after mixing in clear polymer mixing rods. These caustic patterns are eliminated by using TRIMM-doped mixing rods, with a transmittance of 90% after Fresnel losses, which can be readily reduced.

Thesis (Ph. D.)--University of Texas at Dallas, 2006. / Includes bibliographical references (leaves 109-116).

Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2007. / Includes bibliographical references (leaves 64-69). Also available in electronic version.

Thesis (Ph.D.)--University of Delaware, 2006. / Principal faculty advisor: Mary E. Galvin, Dept. of Materials Science & Engineering. Includes bibliographical references.

Thesis (M. Phil.)--University of Hong Kong, 2006. / Title proper from title frame. Also available in printed format.

Electronic power devices made of silicon carbide promisesuperior performance over today's silicon devices due toinherent material properties. As a result of the material'swide band gap of 3.2eV, high thermal conductivity, itsmechanical and chemical stability and a high critical electricfield, 4H-silicon carbide devices have the potential to be usedat elevated temperatures and in harsh environments. Shortercarrier lifetimes and a reduction in the necessary width of thelow-doped drift zone in silicon carbide devices compared totheir silicon counterparts result in faster switching speedsand lower switching losses and thus in much more efficientpower devices. High-voltage 4H-silicon carbide diodes have been fabricatedin a newly developed processing sequence, using standardsilicon process equipment. Epitaxial layers grown by chemicalvapor deposition (CVD) on commercial 4H-silicon carbidesubstrates were used as starting material for both mesa-etchedepitaxial and implanted p+n-n+ planar diodes, Schottky diodesand merged pn-Schottky (MPS) diodes, together with additionaltest structures. The device metallization was optimized to givea low contact resistivity on implanted and epitaxial layers anda sufficiently high Schottky barrier with a singlemetallization scheme. Different high-field termination designshave been tested and breakdown voltages of up to 4 kV onimplanted, field-ring terminated diodes were achieved,corresponding to 80% of the critical electric field. A 5kVepitaxial diode design with a forward voltage drop of 3.5V at acurrent density of 100Acm-2 equipped with an implanted junctiontermination extension (JTE) was also fabricated. A new measurement setup was designed and built with thecapability of measuring current-voltage and capacitance-voltagecharacteristics of semiconductor devices at reverse biases upto 10kV. Together with these electrical measurements, theresults of other characterization techniques were used toidentify performance limiting defects in the fabricated siliconcarbide diodes. Increased forward voltage drop of bipolardevices during on-state operation was studied and it was shownthat the stacking faults causing forward degradation arevisible in scanning electron microscopy. With the help ofsynchrotron white-beam X-ray diffraction topographs (SWBXT),electron beam induced current (EBIC) and electroluminescencemeasurements of silicon carbide diodes, the role of screwdislocations as a dominant source of device failure in the formof localized microplasma breakdown was identified. Screwdislocations with and without open core have been found tocause a 20-80% reduction in the critical electric field of4H-silicon carbide diodes, both for low-voltage (150V) andhigh-voltage (~5kV) designs. While micropipes have almost beeneliminated from commercial silicon carbide material,closed-core screw dislocations are still abundant withdensities in the order of 10000cm-2 in state-of-the-art siliconcarbide epitaxial layers.

Organic light emitting diodes (OLEDs) are being commercialized in display applications, and will be potentially in lighting applications in the near future. This thesis is about the design of high performance OLEDs, which includes both the electrical and optical design of OLEDs. In particular, the following work is included in this thesis: i) Energy level alignment and charge injection at metal/organic interfaces have been systematically studied. ii) Transition metal oxide anodes have been developed to inject sufficient holes into the OLEDs due to their high work function. The oxide anodes have also been used to systematically study the transport properties in organic semiconductors. iii) Highly simplified OLED devices with unprecedentedly high efficiency have been realized using both fluorescent and phosphorescent emitters. The high performance was enabled by using a high work function metal oxide anode and a hole transport material with very a deep highest occupied molecular orbital (HOMO). iv) An optical model has been developed to describe the optical electric field across the OLED device. By using the model, a high performance flexible OLED using metal anode was designed and realized.

Els dispositius semiconductors de potència es requereixen per transmetre o rebre gairebé qualsevol tipus de senyal elèctrica i energia electromagnètica. En temps de constant augment del consum energètic i de la sensibilitat medi-ambiental, aquests petits dispositius poden dura a terme un gran paper. Un aspecte molt important és la elecció del material semiconductor. El carbur de silici (SiC) es un semiconductor de ample banda prohibida que té algunes de les propietats desitjades per a la reducció de pèrdues energètiques. Amb aquest material es poden fer servir regions conductores més fines sense disminuir el voltatge de ruptura gràcies al seu gran valor de camp elèctric de ruptura. Això es tradueix en caigudes de tensió en directe més petites, a més de permetre també una reducció en les pèrdues de commutació gracies a la petita quantitat de portadors que s´han de buidar després del blocatge en invers. A més a més, la amplia banda prohibida i la gran conductivitat tèrmica del SiC en comparació amb el silici permet al dispositius basats en SiC treballar amb densitats de corrent més altes i a més altes temperatures. El tamany i la complexitat del sistemes de potència es redueixen significativament amb components més petits i menors requeriments de sistemes de refredament. Aquesta tesi investiga el disseny, la fabricació i la caracterització de diodes bipolars, Schottky i JBS (Junction Barrier Rectifier) en SiC. S´ha desenvolupat una seqüència de processament basada en la tecnologia de processat de silici disponible a la sala blanca del CNM. A mesura que es millora la tecnologia del material, el paper del disseny de dispositius de potència en SiC esdevé més important. Específicament, per poder extraure totes les capacitats del SiC respecte a la tensió de ruptura es requereix una terminació perifèrica adequada del dispositiu per tal de reduir el fenomen de field crowding que es produeix a la perifèria de la unió principal i que redueix significativament el voltatge de ruptura ideal del dispositiu. Així doncs, un dels objectius principals d´aquesta tesi és el disseny i desenvolupament de terminacions altament efectives per a diodes planars de SiC. Al capítol segon es presenta el disseny i optimització de diferents tècniques de terminació mitjançant l´ús de simuladors numèrics comercials calibrats específicament per al 4H-SiC. La major atenció es centra en la terminació denominada JTE (Junction Termination Extension), i en una nova terminació desenvolupada durant aquest treball de tesi denominada "Floating guard rings assisted JTE", amb la qual s´ha aconseguit una gran eficàcia.La caracterització i l´anàlisi dels principals processos involucrats en la fabricació dels nostres dispositius es resumeix al capítol tercer, a on es detallen els processos de implantació iònica, recuit d´activació de les impureses i la formació dels contactes. Els resultats obtinguts es poden transferir directament a la fabricació de dispositius comercials de SiC. El capítol quart mostra la gran eficàcia que les nostres terminacions han demostrat en els diodes fabricats, especialment amb la nova estructura proposada. A més a més, també s´analitza el funcionament en invers dels diodes així com alguns aspectes tecnològics de segon ordre que habitualment no es tenen en compte però que nosaltres hem demostrat que poden ser de gran importància per al correcte funcionament dels dispositius. Finalment, el capítol cinquè dona a conèixer el funcionament en directe i a altes temperatures (fins a 300ºC) dels tres tipus de diodes fabricats: bipolars (PiN), Schottky i JBS. / Power semiconductor devices are required whenever sending, transmitting or receiving almost any type of electrical and electromagnetic energy or signal/information. In times of escalating power consumption and increasing environmental awareness, these small electronic devices can play a big role. Of large importance is naturally the choice of semiconductor material. Silicon carbide (SiC) is a wide bandgap material that has some of the desired properties to reduce these losses. Short drift regions can be utilized without reducing the blocking voltage thanks to the extremely high electric field strength. This instantly leads to a smaller on-state voltage drop, but also a reduction in switching losses of the device due to the decreased amount of charge carriers that must be swept away after blocking. Moreover, the wide bandgap and high thermal conductivity of SiC compared to silicon allow higher current densities and higher operating temperatures of the devices. The size and complexity of power systems are significantly reduced with smaller components and reduced need for cooling systems. This thesis concerns the design, process integration, fabrication and evaluation of PiN, JBS and Schottky rectifiers in SiC. A process sequence has been developed based on the available silicon process technology in the CNM cleanroom environment.. As the material technology continues to improve, the role of SiC power device design is becoming more important. Specifically, to fully exploit the high reverse blocking capabilities of SiC, proper device edge termination is required to alleviate the device from the well known field crowding effect at the main junction edge that significantly decreases the theoretical one-dimensional breakdown voltage. Thus, one principal aim of this thesis is the design and development of high efficient edge terminations for high power planar SiC diodes. In Chapter 2, it will be presented the design and optimisation of various edge termination techniques using specific 4H-SiC calibrated numerical simulations. Main attention will be focused on junction termination extension techniques (JTE), and a novel edge termination structure namely "Floating guard rings assisted JTE" is presented with great blocking performances.Characterisation and analysis of the main processes involved in the fabrication of our high power diodes are reported in Chapter 3, including ion implantation, activation annealing and contact formation. The obtained results are directly applicable and focus on important problems in the fabrication of SiC power devices. Chapter 4 demonstrates the high blocking efficiency on our fabricated diodes of our previously designed edge terminations, specially that of the novel developed structure, and an analysis of the breakdown behaviour will be reported. Moreover, we also analyse secondary order design parameters, which are not usually considered but clearly important as our results will shown. Finally, Chapter 5 covers the current-voltage performance at high temperature operation, up to 300ºC, of the three different power rectifiers fabricated: PiN, JBS and Schottky.