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The effect of a magnetic field on the forward characteristics of long germanium junction diodes /Dhaka, Vir Abhimanyu Singh January 1962 (has links)
No description available.
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Effects of stress on the electrical characteristics of a tunnel diode /Lee, Hsing-San January 1964 (has links)
No description available.
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Analysis of the effect of fast neutron bombardment on the current-voltage characteristics of a conductivity-modulated p-i-n code /Swartz, John Michael January 1965 (has links)
No description available.
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Analysis and measurement of the small-signal gain of a GaAs brewster angle light amplifier as a function of current /Gray, John Wesley January 1966 (has links)
No description available.
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Small signal impedance on P-I-N? diode under high level injection /Cheung, David K.-P. January 1971 (has links)
No description available.
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The effect of surface recombination velocity on the high level injection current - voltage characteristics of wide based silicon p-i-n diodes /Strong, Alvin Wayne January 1976 (has links)
No description available.
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Bulk gallium nitride based electronic devices Schottky diodes, Schottky-type ultraviolet photodetectors and metal-oxide-semiconductor capacitors /Zhou, Yi, Park, Minseo. January 2007 (has links)
Dissertation (Ph.D.)--Auburn University, / Abstract. Vita. Includes bibliographic references (p.117-130).
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Design, fabrication and characterization of III-nitride PN junction devicesLimb, Jae Boum. January 2007 (has links)
Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008. / William Doolittle, Committee Member ; Joy Laskar, Committee Member ; Russell Dupuis, Committee Chair ; David Citrin, Committee Member ; Srinivas Garimella, Committee Member.
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Etude du comportement électrique et photométrique des diodes électroluminescentes organiques pour l’éclairage ayant subi un vieillissement accéléré / Study of electric and photometric behavior of the organic light emitting diodes for lighting which has undergone an accelerated ageing.Alchaddoud, Alaa 06 June 2017 (has links)
Ce travail porte sur l'étude de la dégradation accélérées des diodes électroluminescentes organiques (OLEDs) pour l'éclairage. Nous avons choisi d'étudier des OLEDs commerciales (Philips lumiblade GL55 et OSRAM Orbeos RMW-046) afin d'éliminer l'effet de l'humidité et de l'oxygène et ainsi que les processus de fabrication sur les mécanismes de dégradation. Une étude bibliographique préalable nous a permis de comprendre les mécanismes de fonctionnement des OLEDs et d'analyser les différentes causes de dégradations. Elle nous a également permis de définir des conditions de vieillissement accéléré (stress thermique et électrique) que nous avons appliquées à nos échantillons. Afin d'appliquer ces conditions de stress particulières, nous avons conçu et réalisé un dispositif expérimental spécifique qui nous permet à la fois d'appliquer ces différentes conditions de vieillissement et de réaliser des mesures électriques et optiques in situ. Ces mesures ont été réalisées avant dégradation, puis jusqu'à une perte de 50% du flux lumineux. L'évolution des caractéristiques électriques et photométriques des OLEDs ainsi que certaines analyses structurales complémentaires nous ont permis d'établir et de comprendre les mécanismes mis en jeu. / This work reports on the study of accelerated ageing of white organic light-emitting diodes (OLEDs) for lighting. We chose to apply our study on commercial products (Philips lumiblade GL55 and OSRAM Orbeos RMW-046) to eliminate the moisture, oxygen and manufacturing process effects on the degradation mechanisms. A preliminary bibliographic study enabled us to understand the operation mechanism of the OLEDs and to analyze the different degradation causes. This one also allowed us to determine the accelerated ageing test conditions (thermal and electrical stresses). In order, to apply these particular stress conditions, we designed and realized a specific and custom-made experimental ageing bench which allows us at the same time to apply these various ageing conditions and carry out electrical and optical measurement in situ. These measurements were realized before degradations and then until a loss of 50% of the luminous flow. The evolution of the electrical and optical characteristics of the OLEDs as well as the results obtained from some additional structural analysis enabled us to establish and understand the involved mechanisms.
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Si-based quantum functional tunneling devices and their applications to logic and other future circuit topologiesJin, Niu 29 September 2004 (has links)
No description available.
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