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Electrical characterization of n-type aluminum gallium arsenideKim, Seung-bae 11 July 1991 (has links)
Graduation date: 1992
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Luminescence properties of rare earth doped III-V and II-VI semiconductorsAlshawa, Amer K. January 2000 (has links)
Thesis (Ph. D.)--Ohio University, June, 2000. / Title from PDF t.p.
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Photoluminescence of InN with Mg and Zn dopants : a thesis submitted in partial fulfilment of the requirements for the degree of Master of Science in Physics in the University of Canterbury /Song, Young Wook. January 2008 (has links)
Thesis (M. Sc.)--University of Canterbury, 2008. / Typescript (photocopy). Includes bibliographical references. Also available via the World Wide Web.
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Electrochemical tuning of charge transport at inorganic semiconductor doped conjugated polymer interfaces through manipulation of electrochemical potential /Daniels-Hafer, Carrie Lynn, January 2004 (has links)
Thesis (Ph. D.)--University of Oregon, 2004. / Typescript. Includes vita and abstract. Includes bibliographical references (leaves 185-196). Also available for download via the World Wide Web; free to University of Oregon users.
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Doping polythiophene derivatives with tridecafluoro-1,1,2,2-tetrahydrooctyl trichlorosilane vaporKao, Chi-yueh. January 2007 (has links)
Thesis (M.S.)--Rutgers University, 2007. / "Graduate Program in Chemistry and Chemical Biology." Includes bibliographical references (p. 24-25).
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Experimental studies of sodium-silicon clathrate compoundsSim, Kung Ek January 1983 (has links)
No description available.
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A quantum mechanical study of dopants in diamondLombardi, Enrico Bruno 11 1900 (has links)
Physics / D.Phil (Physics)
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Metal and nonmetal doped semiconductor photocatalysts for water treatment01 July 2015 (has links)
PhD. (Chemistry) / Please refer to full text to view abstract
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Synthesis and study of transparent p- and n-type semiconductors and luminescent materialsPark, Cheol-Hee 21 January 2005 (has links)
New transparent p- and n-type semiconductors and luminescent materials
have been prepared and characterized. Synthesis, structures, optical and electrical
properties of new chalcogenide fluoride p-type transparent semiconductors MCuQF
(M=Ba, Sr; Q=S, Se, Te) are described. Band-gap tuning and improvement in
conductivity through p-type doping are demonstrated in the family. The new Ag
sulfide fluoride BaAgSF has been prepared, and its optical and electrical properties
have been examined. Phase stabilization as well as optical and electrical properties
of the p-type conductors BaCu₂S₂ and BaCu₂Se₂ are considered.
New n-type transparent conducting films of W-doped In₂O₃ and W-doped
zinc indium oxide (ZIO) have been prepared by pulsed laser deposition, and their
electrical properties have been examined. Results on new transparent thin-film
transistors containing SnO₂ or ZIO are also presented.
Strong near-infrared luminescence of BaSnO3 is described, and the
emission brightness is correlated to the crystallite size of assembled nanoparticles.
Syntheses, structures, and optical properties of (La,Y)Sc₃(BO₃)₄:Eu³⁺,
(Ba,Sr)Sc₂(BO₃)₄:Eu²⁺, and LuAl₃(BO₃)₄:Ln³⁺ (Ln=Eu, Tb, Ce) have been
considered with emphasis on relations between structures and optical properties.
Finally, the synthesis and luminescence properties of new potential X-ray
phosphors Lu₂O₂S:Ln³⁺ (Ln=Eu, Tb) are summarized. / Graduation date: 2005
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Characterizations of annealed ion implanted silicon carbide materials and devicesZhang, Xin. January 2006 (has links)
Thesis (M.E.E.)--University of Delaware, 2006. / Principal faculty advisor: James Kolodzey, Dept. of Electrical and Computer Engineering. Includes bibliographical references.
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