Nous avons effectué dans ce mémoire des études de magnéto-luminescence sur des boîtes quantiques individuelles de GaAs insérées dans une matrice de GaAlAs, boîtes qui se distinguent de la plupart des systèmes étudiés par l’absence des contraintes. Nous avons pu mesurer l’impact de l’orientation cristalline du substrat sur lequel s’effectue la croissance de ces boîtes sur les propriétés magnéto-optiques.Nous avons pu présenter les premières expériences pratiquées sur des structures à boîtes quantique GaAs « gouttelettes » à charge ajustable, élaborées sur substrat orienté (001). La structure fine des excitons a été étudiée en détail et analysée au moyen d’un modèle analytique y compris en champ transverse permettant d’établir les états et énergies propres. Nous avons observé la polarisation dynamique des noyaux à champ nul dans les boîtes quantiques sans contraintes élaborées sur substrat (111)A. Les décalages Overhauser mesurés s’élèvent à 15 – 16 μeV, correspondant à un champ nucléaire de 0.25 T environ. En champ magnétique transverse, nous avons observé des déviations significatives par rapport àl’effet Hanle normal dans le domaine des faibles champs / In this thesis the magneto-optical properties of single GaAs semiconductor quantum dots in AlGaAs barriers are presented. The strain free dots are grown by original Volmer-Weber ("droplet") epitaxy techniques in a molecular beam epitaxy system at the National Institute for Material Science NIMS, Tsukuba, Japan. We showed the first optical investigation of symmetric GaAs quantum dots grown on (111)A substrates. The inherently small neutral exciton fine structure splitting makes this a promising systemfor the generation of polarisation entangled photons via the exciton-biexciton radiative cascade. In photoluminescence spectra in longitudinal magnetic fields applied along the growth axis, we observe in addition to the expected bright states also nominally dark transitions for both charged and neutral excitons. We uncover a strongly non monotonic, sign-changing field dependence of the bright neutral exciton splitting resulting from the interplay between exchange and Zeeman effects. We present a microscopic theory developed in close collaboration with the A. F. Ioffe Institute (St. Petersburg,Russia) of the magnetic field induced mixing of heavy-hole states with angular momentum projections 3/2 in GaAs droplet dots grown on (111)A substrates.Chapter 4 of this thesis is focused on the charge tuneable structures grown on n+-(100) GaAs substrate. In non-intentionally doped samples, due to charge fluctuations, the neutral X0 exciton and the positively (negatively) charged exciton X+(X-) are observed simultaneously in time integrated spectra. We present here deterministic charging of droplet dots with single electrons. Detailed studies in transverse magnetic fields allowed unambiguously identifying the charge states and determining the exciton fine structure. The neutral exciton fine structure was tuned to zero in finite transverse fields, a crucial property for achieving efficient polarization entangled two photon sources. In chapter 5, we focus on the nuclear spin effects in [111] grown quantum dots under optical pumping conditions. An optically oriented electron spin can transfer its polarization to a nucleus (Overhauser effect). In the well-studied strained InGaAs dots in GaAs, dynamic nuclear polarization (DNP) at zero applied magnetic field is possible due to screening of the nuclear dipole-dipole interaction by strong nuclear quadrupole effects. Here we present the first observation of DNP in strain free dots, i.e. in theabsence of nuclear quadrupole effects. We investigated in detail the role of the strong effective magnetic field acting on the nuclei due to the presence of a well-oriented electron spin (Knight field). This Knight field in the order of 15 mT for most dots is an important ingredient for the observed DNP at zero field. The intricate interplay between the Knight field and the Overhauser field is studied in a transverse magnetic field. These Hanle measurements performed on single dots allow us to determine the sign of the confined electron g-factor and spin relaxation time

abstract: III-Nitride nanostructures have been an active area of research recently due to their ability to tune their optoelectronic properties. Thus far work has been done on InGaN quantum dots, nanowires, nanopillars, amongst other structures, but this research reports the creation of a new type of InGaN nanostructure, nanorings. Hexagonal InGaN nanorings were formed using Metal Organic Chemical Vapor Deposition through droplet epitaxy. The nanorings were thoroughly analyzed using x-ray diffraction, photoluminescence, electron microscopy, electron diffraction, and atomic force microscopy. Nanorings with high indium incorporation were achieved with indium content up to 50% that was then controlled using the growth time, temperature, In/Ga ratio and III/N ratio. The analysis showed that the nanoring shape is able to incorporate more indium than other nanostructures, due to the relaxing mechanism involved in the formation of the nanoring. The ideal conditions were determined to be growth of 30 second droplets with a growth time of 1 minute 30 seconds at 770 C to achieve the most well developed rings with the highest indium concentration. / Dissertation/Thesis / M.S. Materials Science and Engineering 2012

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