Mémoire (Sc.A.)--Université du Québec à Chicoutimi, 1986. / Document électronique également accessible en format PDF. CaQCU

Mémoire (M.Eng.)--Université du Québec à Chicoutimi, 2001. / Document électronique également accessible en format PDF. CaQCU

Thèse (Sc.A.) -- Université du Québec à Chicoutimi, 2003. / Bibliogr.: f. [81]-84. Document électronique également accessible en format PDF. CaQCU

Thèse (M.Eng.) -- Université du Québec à Chicoutimi, 2003. / Bibliogr.: f. 123-126. Document électronique également accessible en format PDF. CaQCU

Thèse (D.Eng.) -- Université du Québec à Chicoutimi, 2004. / Bibliogr.: f. 170-179. Document électronique également accessible en format PDF. CaQCU

CAPES / Com o avanço da miniaturização de componentes e dispositivos eletrônicos ocorrida nos últimos anos, a utilização de materiais dielétricos e a necessidade de informações precisas sobre o comportamento dielétrico apresentado por estes materiais aumentou consideravelmente. Neste trabalho é apresentado inicialmente as motivações para o estudo do comportamento dielétrico e da modelagem da função resposta dielétrica. A partir da teoria proposta por Debye e identificando suas peculiaridades, são exploradas algumas extensões deste modelo e analisada a interpretação da função resposta proposta por estes. Muitos modelos assumiam a existência de múltiplas interações envolvendo os dipolos com o meio dielétrico, as quais contribuíam para a dinâmica do comportamento dielétrico, somente mais tarde é que estas múltiplas interações ganharam uma conexão entre a resposta dielétrica observada com as propriedades intrínsecas do material. Por meio do modelo proposto por Dissado e Hill e assumindo dados experimentais disponíveis na literatura para alguns materiais, foi testada a validade da função resposta resultante do modelo, na qual veri cou-se a capacidade da mesma em ajustar as curvas para as componentes real e imaginária da permissividade para uma grande variedade de materiais dielétricos. A partir das simulações e análises realizadas, ficou evidente a dependência do comportamento dielétrico com a temperatura, fato este que deverá ser abordado em trabalhos futuros. / With the improvement of miniaturization of electronic components and devices occurred in recent years, the use of dielectric materials and the need for accurate information about the dielectric behavior displayed by these materials has increased considerably. In this work is initially presented the motivations for the study of dielectric behavior and the modeling of the dielectric response function. From the theory proposed by Debye and identifying its peculiarities, are exploited some extensions of this model and analyzed the interpretation of response function proposed by these. Many models used to assume the existence of multiple interactions involving the dipoles with the dielectric medium, which contributed to the dynamics of the dielectric behavior, only later the multiple interactions won a connection between the dielectric response observed with the intrinsic properties of the materials. Through the model proposed by Dissado and Hill and assuming experimental data available in bibliography for some materials, was tested the validity of the response function resulting from the model, in which was veri ed the ability of the same to adjust the curves for the real and imaginary components of permittivity to a wide variety of dielectric materials. From the simulations and analyzes performed, was evident the dependence of dielectric behavior with temperature, a fact that should be discussed in future works.

Mott insulators are a family of materials in which strong electron-electron interactions induce an unconventional insulating state in the system that would otherwise behave as an electrical conductor according to the non-interacting band theory. In particular, the nature of the Mott metal-insulator transition (MIT) has been the subject of intense research interest because it can involve a complicated interplay between magnetic and electronic properties. In some Mott systems, Mott transitions occur in the one-step process, from an antiferromagnetic insulator (AFI) to a paramagnetic metal phase (PMM), while in other Mott systems a two-step transition with an intermediate antiferromagnetic metal (AFM) phase can be observed. Since 2015, the muon spin relaxation (𝜇SR) group at Columbia University started systematic 𝜇SR studies on a series of Mott systems, including one-step transition Mott systems 𝑅𝐸NiO₃ and V₂O₃, as well as two-step transition Mott systems Ba(Co, Ni)S₂, Ni(S, Se)₂ and (La, Sr)VO₃. This dissertation first introduces the comprehensive 𝜇SR research on multiple families of Mott systems conducted by our 𝜇SR group, including 𝑅𝐸NiO₃, V₂O₃, and BaCoS₂. Then the 𝜇SR experimental findings on the Mott system NiS₂₋ₓSeₓ will be presented, which is the most extensively studied material in this thesis. The NiS₂₋ₓSeₓ system is of particular interest because there is a large region of intermediate AFM state emerging between AFI and PMM states with Se doping, making it an ideal platform to provide information on static magnetism in the AFM state and thus can help us better understand the evolution of magnetic NiS₂₋ₓSeₓ, with our key findings being: (1) The AFM state of the NiS₂₋ₓSeₓ system shows significantly random spin correlations, and the magnetic order is suppressed by a gradual reduction of the ordered moment size, with a nearly full ordered volume fraction until very close to the AFM-PMM boundary. (2) No signature of dynamic critical behavior was observed in the thermal phase transition, indicating a first-order thermal phase transition. The next part of this dissertation presents our computational simulations on the NiS₂₋ₓSeₓ system. Dipolar field simulations have shown that only the combination of easy axis randomization and Ni moment dilution in NiS₂ can lead to the internal field distribution corresponding to the observed 𝜇SR spectrum in the AFM region. Also, this picture could qualitatively explain the neutron and muon results consistently, thus reconciling the seemingly contradicting experimental results by 𝜇SR and the previous neutron scattering studies shown in the AFM region. Furthermore, we propose a percolation model that can capture both the charge and spin connections of the interpenetrating percolating spin and charge networks in the NiS₂₋ₓSeₓsystem, which raises the possibility of "compromising metallicity and magnetic order" in the two-step Mott transition evolving AFI to AFM to PMM states in NiS₂₋ₓSeₓ.

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Mémoire (M. Sc.A.)-- Université du Québec à Chicoutimi, 1985. / Bibliogr.: f. [94]-99. Document électronique également accessible en format PDF. CaQCU

Thèse (M.Eng.) -- Université du Québec à Chicoutimi, 2004. / Bibliogr.: f. [70]-76. Document électronique également accessible en format PDF. CaQCU