201 |
Optical Activity of Chiral Nanomaterials: Effects of Short Range and Long Range Electromagnetic InteractionsFan, Zhiyuan 10 June 2014 (has links)
No description available.
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202 |
Exciton Diffusion in Nanocrystal SolidsKholmicheva, Natalia N. 02 August 2017 (has links)
No description available.
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203 |
Spectral Analysis of the Photodegradation of the Purple Protein Bacteriorhodopsin and the Supporting Evidence of Exciton Coupling as the Origin of the Circular Dichroism SignalAnderson, Carlie Jean January 2017 (has links)
No description available.
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204 |
OPTICAL IMAGING OF EXCITON MAGNETIC POLARONS IN DILUTED MAGNETIC SEMICONDUCTOR QUANTUM DOTSGURUNG, TAK BAHADUR 02 October 2006 (has links)
No description available.
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205 |
Optical and Structural Characterization of Confined and Strained Core/Multi-Shell Semiconducting NanowiresFickenscher, Melodie A. 19 April 2012 (has links)
No description available.
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206 |
EXCITON SPIN RELAXATION IN ZNMNSE-BASED DIULUTE MAGNETIC SEMICONDUCTOR HETEROSTRUCTURESHodges, Alex Randall January 2000 (has links)
No description available.
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207 |
Applications of the Quasiparticle Self-consistent <i>GW</i> MethodCheiwchanchamnangij, Tawinan 17 February 2014 (has links)
No description available.
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208 |
Spin and Tunneling Effects in Coupled Quantum DotsRamanathan, Swati 26 July 2012 (has links)
No description available.
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209 |
Competing exciton localization effects due to disorder and shallow defects in semiconductor alloysDietrich, Christof P., Lange, Mike, Benndorf, Gesa, Lenzner, Jörg, Lorenz, Michael, Grundmann, Marius 26 July 2022 (has links)
We demonstrate that excitons in semiconductor alloys are subject
to competing localization effects due to disorder (random potential fluctuations)
and shallow point defects (impurities). The relative importance of these effects
varies with alloy chemical composition, impurity activation energy as well as
temperature. We evaluate this effect quantitatively for MgxZn1−xO : Al (0 6
x 6 0.058) and find that exciton localization at low (2 K) and high (300 K)
temperatures is dominated by shallow donor impurities and alloy disorder,
respectively.
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210 |
Exciton–polaritons in a ZnO-based microcavity: polarization dependence and nonlinear occupationSturm, Chris, Hilmer, Helena, Schmidt-Grund, Rüdiger, Grundmann, Marius 27 July 2022 (has links)
We report on the occupation of the lower exciton–polariton branch
in a ZnO-based microcavity as a function of the detuning between the exciton
and the uncoupled cavity-photon mode and on the optical excitation density.
We emphasize the difference in the dispersion and occupation of the lower
polariton branch as a function of the linear polarization of the emitted light.
For the negative detuning regime, we found an energy splitting between the
transverse electric (TE)- and transverse magnetic (TM)-polarized states at inplane
wave vectors between 0.4×107 m−1 and 1.2×107 m−1, which is caused
by the polarization dependence of the dispersion of the uncoupled cavity-photon
mode. The maximum energy splitting of about 6 meV was observed for a
detuning of about 1 = −70 meV. From the integrated photoluminescence peak,
we deduce the occupation of the lower polariton branch as well as the scattering
rates of exciton–polaritons into the lower polariton branch. We found that the
energy splitting causes an enhanced scattering of exciton–polaritons into
the lower polariton branch for the TM-polarized light compared with that of the
TE-polarized light. By varying the excitation density, we observe a superlinear
growth of the lower polariton branch occupation for negative and intermediate
detuning regimes. For an accumulation of exciton–polaritons in the ground state
at low temperatures (T = 10 K), we found an intermediate detuning regime
(−20 meV < 1 < +20 meV) as the optimum. With increasing temperature, this
optimum detuning range shifts to larger negative values.
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