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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
201

Optical Activity of Chiral Nanomaterials: Effects of Short Range and Long Range Electromagnetic Interactions

Fan, Zhiyuan 10 June 2014 (has links)
No description available.
202

Exciton Diffusion in Nanocrystal Solids

Kholmicheva, Natalia N. 02 August 2017 (has links)
No description available.
203

Spectral Analysis of the Photodegradation of the Purple Protein Bacteriorhodopsin and the Supporting Evidence of Exciton Coupling as the Origin of the Circular Dichroism Signal

Anderson, Carlie Jean January 2017 (has links)
No description available.
204

OPTICAL IMAGING OF EXCITON MAGNETIC POLARONS IN DILUTED MAGNETIC SEMICONDUCTOR QUANTUM DOTS

GURUNG, TAK BAHADUR 02 October 2006 (has links)
No description available.
205

Optical and Structural Characterization of Confined and Strained Core/Multi-Shell Semiconducting Nanowires

Fickenscher, Melodie A. 19 April 2012 (has links)
No description available.
206

EXCITON SPIN RELAXATION IN ZNMNSE-BASED DIULUTE MAGNETIC SEMICONDUCTOR HETEROSTRUCTURES

Hodges, Alex Randall January 2000 (has links)
No description available.
207

Applications of the Quasiparticle Self-consistent <i>GW</i> Method

Cheiwchanchamnangij, Tawinan 17 February 2014 (has links)
No description available.
208

Spin and Tunneling Effects in Coupled Quantum Dots

Ramanathan, Swati 26 July 2012 (has links)
No description available.
209

Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys

Dietrich, Christof P., Lange, Mike, Benndorf, Gesa, Lenzner, Jörg, Lorenz, Michael, Grundmann, Marius 26 July 2022 (has links)
We demonstrate that excitons in semiconductor alloys are subject to competing localization effects due to disorder (random potential fluctuations) and shallow point defects (impurities). The relative importance of these effects varies with alloy chemical composition, impurity activation energy as well as temperature. We evaluate this effect quantitatively for MgxZn1−xO : Al (0 6 x 6 0.058) and find that exciton localization at low (2 K) and high (300 K) temperatures is dominated by shallow donor impurities and alloy disorder, respectively.
210

Exciton–polaritons in a ZnO-based microcavity: polarization dependence and nonlinear occupation

Sturm, Chris, Hilmer, Helena, Schmidt-Grund, Rüdiger, Grundmann, Marius 27 July 2022 (has links)
We report on the occupation of the lower exciton–polariton branch in a ZnO-based microcavity as a function of the detuning between the exciton and the uncoupled cavity-photon mode and on the optical excitation density. We emphasize the difference in the dispersion and occupation of the lower polariton branch as a function of the linear polarization of the emitted light. For the negative detuning regime, we found an energy splitting between the transverse electric (TE)- and transverse magnetic (TM)-polarized states at inplane wave vectors between 0.4×107 m−1 and 1.2×107 m−1, which is caused by the polarization dependence of the dispersion of the uncoupled cavity-photon mode. The maximum energy splitting of about 6 meV was observed for a detuning of about 1 = −70 meV. From the integrated photoluminescence peak, we deduce the occupation of the lower polariton branch as well as the scattering rates of exciton–polaritons into the lower polariton branch. We found that the energy splitting causes an enhanced scattering of exciton–polaritons into the lower polariton branch for the TM-polarized light compared with that of the TE-polarized light. By varying the excitation density, we observe a superlinear growth of the lower polariton branch occupation for negative and intermediate detuning regimes. For an accumulation of exciton–polaritons in the ground state at low temperatures (T = 10 K), we found an intermediate detuning regime (−20 meV < 1 < +20 meV) as the optimum. With increasing temperature, this optimum detuning range shifts to larger negative values.

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