The electron, gamma and neutron radiation degradation of III-V semiconductors and heterojunction bipolar transistors (HBTs) is investigated in this thesis. Particular attention is paid to InP and InGaAs materials and InP/InGaAs abrupt single HBTs (SHBTs). Complete process sequences for fabrication of InP/InGaAs HBTs are developed and subsequently employed to produce the devices, which are then electrically characterized and irradiated with the different types of radiation. A comprehensive analytical HBT model is developed and radiation damage calculations are performed to model the observed radiation-induced degradation of SHBTs. The most pronounced radiation effects found in SHBTs include reduction of the common-emitter DC current gain, shift of the collector-emitter (CE) offset voltage and increase of the emitter, base and collector parasitic resistances. Quantitative analysis performed using the developed model demonstrates that increase of the neutral bulk and base-emitter (BE) space charge region (SCR) components of the base current are responsible for the observed current gain degradation. The rise of the neutral bulk recombination is attributed to decrease in a Shockley-Read-Hall (SRH) carrier lifetime, while the SCR current increase is caused by rising SCR SRH recombination and activation of a tunneling-recombination mechanism. On the material level these effects are explained by displacement defects produced in a semiconductor by the incident radiation. The second primary change of the SHBT characteristics, CE offset voltage shift, is induced by degradation of the base-collector (BC) junction. The observed rise of the BC current is brought on by diffusion and recombination currents which increase as more defects are introduced in a semiconductor. Finally, the resistance degradation is attributed to deterioration of low-doped layers of a transistor, and to degradation of the device metal contacts. / Graduation date: 2001

Thesis (M.S.)--University of Hawaii at Manoa, 2007. / Includes bibliographical references. / xviii, 406 leaves, bound ill. 29 cm

M.Sc. (Chemistry) / Please refer to full text to view abstract

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Ng, Chi Hai Alvin. / Thesis submitted in: December 2002. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2003. / Includes bibliographical references. / Abstracts in English and Chinese. / Abstract --- p.i / Acknowledgement --- p.iv / Table of Contents --- p.v / List of Figure Captions --- p.ix / List of Table Captions --- p.xx / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Silicon Crystal Structure --- p.1 / Chapter 1.2 --- Silicon Dioxide Structure --- p.2 / Chapter 1.3 --- Wafer Cleaning of Silicon --- p.3 / Chapter 1.3.1 --- Sources of Contamination --- p.4 / Chapter 1.3.2 --- Traditional Approach of Wafer Cleaning --- p.5 / Chapter 1.3.3 --- Recent Developments in Wafer Cleaning --- p.6 / Chapter 1.3.3.1 --- Particles --- p.6 / Chapter 1.3.3.2 --- Metal Contamination --- p.7 / Chapter 1.3.3.3 --- Organic Contamination --- p.9 / Chapter 1.3.3.4 --- Surface Microroughness --- p.9 / Chapter 1.3.3.5 --- Native Oxide --- p.11 / Chapter 1.4 --- Oxidation of Silicon --- p.13 / Chapter 1.4.1 --- The Initial Oxidation Regime --- p.17 / Chapter 1.5 --- Current Status of MOS Structure --- p.19 / Chapter 1.5.1 --- Wafer Cleaning --- p.19 / Chapter 1.5.2 --- Silicon Oxidation --- p.20 / Chapter 1.5.3 --- Ozone Oxidation --- p.24 / Chapter 1.5.4 --- High-k Dielectrics --- p.26 / Chapter 1.5.4.1 --- Silicon Oxynitride --- p.27 / Chapter 1.5.4.2 --- Hafnium Oxide and Zirconium Oxide --- p.28 / Chapter 1.5.5 --- Single Monolayer Oxide of Silicon --- p.32 / Chapter 1.6 --- Oxidation by Conventional Furnace --- p.36 / Chapter 1.7 --- Oxidation by RTO --- p.37 / Chapter 1.7.1 --- Equipment Issues --- p.38 / Chapter 1.8 --- Radiation Effects --- p.38 / Chapter 1.8.1 --- Radiation Effects on Ultrathin Gate Oxides --- p.45 / Reference --- p.45 / Chapter Chapter 2 --- Preparation and Characterization Techniques --- p.48 / Chapter 2.1 --- Conventional Furnace --- p.48 / Chapter 2.2 --- Rapid Thermal Oxidation (RTO) --- p.48 / Chapter 2.3 --- Irradiation Source --- p.49 / Chapter 2.4 --- Capacitance-Voltage (C-V) and Current-Voltage (I-V) Curves --- p.51 / Chapter 2.4.1 --- Definition of Potential and Sign Conventions --- p.51 / Chapter 2.4.2 --- The Poisson Equation --- p.55 / Chapter 2.4.3 --- Low Frequency Capacitance --- p.58 / Chapter 2.4.3.1 --- Sum of Series Capacitors --- p.58 / Chapter 2.4.3.2 --- Discussion of Various Terms Contributing to the Field --- p.60 / Chapter 2.4.3.3 --- Calculation of the Low Frequency Capacitance --- p.62 / Chapter 2.4.3.4 --- "Simpler Forms of Capacitancein Accumulation, at Flatband, in Depletion and Inversion" --- p.63 / Chapter 2.4.4 --- High Frequency C-V Curves --- p.65 / Chapter 2.4.5 --- Experimental Setups --- p.66 / Chapter 2.5 --- Conductance-Voltage (G-V) Characterization --- p.67 / Chapter 2.5.1 --- Experimental Details --- p.68 / Chapter 2.6 --- Ellipsometry --- p.69 / Chapter 2.7 --- Rutherford Backscattering Spectrometry --- p.71 / Chapter 2.7.1 --- Experimental Setup --- p.72 / Reference --- p.72 / Chapter Chapter 3 --- Annealing Effects of Conventional Furnace Grown Oxide --- p.74 / Chapter 3.1 --- Experiment --- p.74 / Chapter 3.2 --- Results --- p.74 / Chapter 3.3 --- Conclusions --- p.85 / Reference --- p.86 / Chapter Chapter 4 --- Rapid Thermal Oxidation of MOS Capacitors --- p.87 / Chapter 4.1 --- Experiment --- p.87 / Chapter 4.2 --- Results and Discussions --- p.90 / Chapter 4.3 --- Conclusions --- p.114 / Reference --- p.115 / Chapter Chapter 5 --- Ionizing Radiation on MOS Capacitors --- p.117 / Chapter 5.1 --- Experimental Setup --- p.117 / Chapter 5.2 --- Results and Discussions --- p.120 / Chapter 5.3 --- Conclusions --- p.149 / Reference --- p.151 / Chapter Chapter 6 --- Conclusions --- p.153 / Chapter 6.1 --- Summary --- p.153 / Chapter 6.2 --- Future Work --- p.155 / Reference --- p.157

Graduation date: 1999

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