Many high performance amplifiers use power MOSFETs in their output stages, especially in operational amplifier applications whenever high current or power is needed. MOSFETs have advantages over bipolar transistors in amplifier output stage because MOSFETs are majority carrier devices. The result is wide frequency response, fast switching and better linearity than power bipolar transistors. But unlike bipolar circuits, which are relatively tolerant of ionizing radiation, MOSFETs may suffer severe parametric degradation at low total-dose levels. The effects of ionizing radiation on MOSFETs are discussed, and the performance of an amplifier circuit that uses a complementary MOSFET source follower in its output stage is simulated to examine the effect of MOSFET radiation damage on amplifier performance. An increase in power dissipation was the most significant degradation caused by ionizing radiation.

Protection against the harmful effects of ultraviolet radiation is of increasing importance due to the depletion of stratospheric ozone, which shields the earth from harmful UVC rays (in the range 200-280 nm) and some UVB rays (in the range 280-290 nm). In addition, as the skin is repeatedly exposed to solar radiation, the possibility exists that the incidence of skin cancer is enhanced. This has led to the increased use of commercial sunscreens, which apart from their benefits, also have undesirable effects such as photodegradation and skin penetration. We therefore studied the photodegradation of two sunscreen absorbers that are used in most sunscreen formulations. The combination of the UVB filter, 2-ethylhexyl-p-methoxycinnamate (EHMC), and the UVA filter, avobenzone (AVO), are commonly used in sunscreen products. These two filters are known to exhibit differing photostabilities in different media. The aim of this project was to investigate their photochemical behaviour in a polar and a non-polar solvent and to identify the UV-induced breakdown products. Methanol was chosen as the polar medium and cyclohexane as the non-polar medium. The sunscreen filters were irradiated either singly or in combination in the two solvents with wavelengths greater than 300 nm. The irradiated samples were analysed by UV-spectrophotometry, high performance liquid chromatography (HPLC) and gas chromatography (GC). The effects of direct irradiation with UVB and UVA light, quenchers and photosensitisers were also examined. EHMC is supplied commercially as the trans-isomer and upon irradiation photoisomerises, in both methanol and cyclohexane, to its cis-isomer. AVO is photostable in methanol but photodegrades in cyclohexane. This behaviour is also evident when mixtures of the two filters are irradiated. The loss in absorbance of both EHMC and AVO was monitored by UV-spectrophotometric analysis. Since EHMC does not absorb UV light at the wavelength of maximum absorbance of AVO, a method to quantify the amount of EHMC and AVO present in the mixture was devised. In order to identify the degradation products, HPLC and GC techniques were implemented. The photoproducts formed in the polar methanolic medium were separated and quantified by HPLC analysis. Gas chromatography with flame ionisation detection (GC-FID) was used to separate the photoproducts formed in the non-polar cyclohexane medium. Gas chromatography with mass-spectral detection (GC-MS) was used to identify the photoproducts formed upon irradiation of AVO and to show that UVA irradiation of AVO photosensitises the isomerisation of EHMC. The rate of a photochemical reaction depends upon a number of factors including the number of photons absorbed by sunscreen absorbers. Chemical actinometry was used to determine the number of photons absorbed by EHMC, AVO and the mixture of the two in methanol and cyclohexane. The number of photons absorbed by AVO in cyclohexane was used to determine the quantum yield for the photodegradation of AVO. We also determined the rate constants for EHMC photoisomerisation and AVO photodegradation. Finally, we investigated the effect of sunlight on commercial sunscreens containing EHMC and AVO. / Thesis (M.Sc.)-University of Natal, Durban, 2002.

No description available.

Call number: LD2668 .T4 1957 M68 / Master of Science

Accelerated Partial Breast Irradiation (APBI) is a common treatment of breast cancer with many modalities including 3D Conformal Radiation Therapy (3D-CRT), Intensity Modulated Radiation Therapy (IMRT), and High Dose Rate Brachytherapy (HDR). In this research, a retrospective analysis of patient’s data was performed to analyze the NTCP/TCP (Normal Tissue Complication Probability/Tumor Control Probability) and Dose Volume Histogram (DVH) parameters for HDR with SAVI, 3D, and IMRT and compare them focusing on critical organs such as the heart, ipsilateral lung, chest wall, ribs, and skin. TCP was 90.275%, 55.948%, and 53.369% for HDR, 3D, and IMRT respectively. The ribs were the most sensitive critical organ for all 3 modalities with a mean NTCP of 8%, 15%, and 8% for HDR, 3D, and IMRT respectively. DVH analysis showed HDR spares critical organs more than EBRT except for 2 patients receiving high doses to the ribs and chest wall. / Includes bibliography. / Thesis (M.S.)--Florida Atlantic University, 2019. / FAU Electronic Theses and Dissertations Collection

The effect of lateral electron disequilibrium on patient dose has been investigated. This has been achieved by dosimetry in lung and air cavity phantoms at megavoltage x-ray energies. The scatter function photon beam models for tissue inhomogeneity, such as the ETAR correction algorithm, currently implemented in commercial treatment planning systems do not predict the dose distribution accurately in many situations where lateral electron equilibrium does not exist. The lung phantom is made up of solid water slabs and lung analogue slabs. Using a thimble ionization chamber, a Markus ionization chamber and TLDs the problems of central axis dose reduction and penumbral flaring in lung for x-rays have been investigated. It is found that the ETAR correction predicts the dose at mid lung with varying degrees of accuracy depending on the field size. It was found that internal body cavities, depending on their size, experience underdose or overdose in the distal surfaces of the cavities when compared with the results predicted by an ETAR correction algorithm. Therefore, this energy is not recommended for use in situations where cavities arise / Master of Science (Hons)

No description available.

The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs are studied for neutron irradiation effects. A compact model and the parameter extraction procedures for HBTs are developed, and hence the I[subscript C]--V[subscript CE] characteristics of pre- and post-irradiation HBTs can be simulated by employing the developed model. HBTs are electrically characterized before and after proton irradiation. Overall, the studied HBT devices are quite robust against high energy proton irradiation. The most pronounced radiation effect shown in SHBTs is gain degradation. Displacement damage in the bulk of base-emitter space-charge region, leading to excess base current, is the responsible mechanism for the proton-induced gain degradation. The performance degradation depends on the operating current and is generally less at higher currents. Compared to the MBE grown devices, the MOVPE grown HBTs show superior characteristics both in initial performance and in proton irradiation hardness. The 67 MeV protons cause more damage than 105 MeV protons due to their higher value of NIEL (non-ionizing energy loss). The HBT I-V characteristics of pre- and post-irradiated samples can be simulated successfully by employing the developed model. GaN heterojunction LEDs are electrically and optically characterized before and after neutron irradiation. Neutron irradiation causes changes in both the I-V characteristic and the light output. Atomic displacement is responsible for both electrical and optical degradation. Both electrical and optical properties degrade steadily with neutron fluence producing severe degradation after the highest fluence neutron irradiation. The light output degrades by more than 99% after 1.6x10����� n/cm�� neutron irradiation, and the radiation damage depends on the operating current and is generally less at higher currents. / Graduation date: 2003

The neutron and electron radiation effects in Ill-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are AlGaAs/GaAs high electron mobility transistors (HEMTs), AlGaAs/InGaAs/GaAs heterostructure insulated gate field effect transistors (HIGFETs), and InP/InCaAs/InGaAs single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated for neutron irradiation effects. Detailed optimized processing of HEMT devices is introduced. Numerical as well as analytical models that incorporate radiation induced degradation effects in HEMTs and HIGFETs are developed. The most prominent radiation effects appearing on both HEMT and HIGFET devices are increase of threshold voltage (V[subscript T]) and decrease of transconductance (g[subscript m]) as radiation dose increases. These effects are responsible for drain current degradation under given bias conditions after irradiation. From our experimental neutron irradiation study and our theoretical models, we concluded that threshold voltage increase is due to the radiation-induced acceptor-like (negatively charged) traps in the GaAs channel region removing carriers. The mobility degradation in the channel is responsible for g[subscript m] decrease. Series resistance increase is also related to carrier removal and mobility degradation. Traps introduced in the GaAs region affect the device performance more than the traps in the AlGaAs doped region. V[subscript T] and g[subscript m] of HIGFET devices are less affected by neutron radiation than they are in HEMTs. This difference is attributed to different shapes of the quantum well in the two devices. The main effects of electron and neutron irradiation of SHBTs are decrease of collector current (I[subscript c]), decrease of common-emitter DC gain, increase of the collector output conductance (��I[subscript c]/��V[subscript CE]), and increase of collector-collector offset voltage. The decrease of breakdown voltage of reverse biased base-emitter junction diode is responsible for increasing the output conductance after irradiation. Base-collector junction degradation also induces collector-emitter offset voltage increase. / Graduation date: 2003

The main aim of this thesis was to study the role of the indirect actions of γ-rays and α-particles on the complexity of primary DNA damages and the repair fidelity of major DNA repair pathways: non-homologous end joining (NHEJ), homologous recombination repair (HRR) and base excision repair (BER). The complexity of radiation-induced damages increases and the proximity between damages decreases with increasing LET due to formation of ionization clusters along the particle track. The complexity of damages formed can be modified by the free radical scavenger dimethyl sulfoxide (DMSO). In addition, the effects of low doses of low dose rate γ-radiation on cellular response in terms of differentiation were investigated. Paper I investigates the role of the indirect effect of radiation on repair fidelity of HRR, NHEJ and BER when damages of different complexity were induced by radiation or by potassium bromate. We found that potassium bromate induces complex DNA damages through processing of base modifications and that the indirect effect of radiation has a high impact on the NHEJ pathway. Results in paper II confirmed our conclusions in paper I that the indirect effect from both γ-rays and α-particles has an impact on all three repair pathways studied and NHEJ benefits the most when the indirect effect of radiation is removed. In paper III we investigated the effects of low dose/dose rate γ-radiation on the developmental process of neural cells by using cell models for neurons and astrocytes. Our results suggest that low dose/dose rate γ-radiation attenuates differentiation and down-regulates proteins involved in the differentiation process of neural cells by an epigenetic rather than cytotoxic mechanism. / <p>At the time of doctoral defense, the following paper was unpublished and had a status as follows: Paper 2: Manuscript.</p>