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Bibliography: leaves 267-287.

A summary of total dose effects observe in advanced Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) is presented in this work. The principal driving froces behin the increased use of SiGe BiCMOS technology in space based electronics systems are outlined in the motivation Section of Chapter I. This is followed by a discussion of the strained layer Si/SiGe material structure and relevant fabrication techniques used in the development of the first generation of this technology. A comprehensive description of the device performance is presented. Chapter II presents an overview of radiation physics as it applies to microelectronic devices. Several sources of radiation are discussed including the environments encountered by satellites in different orbital paths around the earth. The particle types, interaction mechanisms and damage nomenclature are described. Proton irradiation experiments to analyze worst case displacement and ionization damage are examined in chapter III. A description of the test conditions is first presented, followed by the experimental results on the observed dc and ac transistor performance metrics with incident radiation. The impact of the collector doping level on the degradation is discussed. In a similar fashion, gamma irradiation experiments to focus on ionization only effects are presented in chapter IV. The experimental design and dc results are first presented, followed by a comparison of degradation under proton irradiation. Additional proton dose rate experiments conducted to further investigate observed differences between proton and gamma results are presented.

Thesis (Ph. D.)--University of Hawaii at Manoa, 2004. / Includes bibliographical references (leaves 198-219). / Also available by subscription via World Wide Web / xvii, 219 leaves, bound ill., some col. 29 cm

The effect of microwave radiation on soil bacteria in situ has been studied in both lab and field conditions. Radiation and thermal profiles show that heterotrophic bacteria, spores, fungi, and actinomycetes were not affected by total microwave radiations over the range 0 to 80 seconds of exposure at a net input of 1 KW of intensity. Nitrogen-fixing bacteria and nitrifying bacteria were also resistant to these doses. The soil microorganisms were inactivated as a function of microwave radiation in the range of 80 to 480 seconds of exposure to 1 KW of continuous radiation. By studying the relationship between temperature generated in dry and wet organisms and the pattern of destruction of inoculated bacteria by microwave radiation, it was found that inactivation was a function of cell hydration. It also revealed that bacterial cells do not absorb microwave energy and that the lethal effect of microwaves is due to direct energy transfer to cell water and the temperature increase of the suspending medium.

Call number: LD2668 .T4 1933 H305

When electronic components are to be used in systems destined for operation in the extraterrestrial environment, one must be concerned about the effects of the naturally occurring radiation in outer space. For example, power metal-oxide-semiconductor-field-effect transistors (MOSFETs) and power bipolar junction transistors (BJTs) are susceptible to a phenomenon called single-event burnout (SEB) which may result from bombardment by heavy ions originating from the nuclear reactions within the sun and other stars. SEB is a catastrophic failure mechanism initiated by the passage of a heavy ion through sensitive regions of the power MOSFET or power BJT. The main thrust of this dissertation is an analytical model describing the device-related aspects of the SEB mechanism. Physical device parameters such as doping concentrations, dimensions of various regions, and operating bias are related to SEB by the model. It is shown that the model predicts a decrease in the SEB susceptibility with a decrease in the internal base resistance (in the power BJT or parasitic BJT in the power MOSFET structure), a decrease in the operating bias, or an increase in the ambient device temperature. These findings are then qualitatively verified with experimental data.

Fast neutron irradiation tests were performed to determine the correlation of change of drain-source resistance and neutron fluence for power MOSFETs. The Objectives of the tests were: (1) to detect and measure the degradation of critical MOSFET device parameters as a function of neutron fluence (2) to compare the experimental results and the theoretical model. In general, the drain-source resistance increased from 1 Ohm to 100 Ohm after exposure to fast neutron fluence of 3 x 1014 neut/cm2, and decreased by a factor of five after high temperature annealing.