Face à la densité importante d’intégration des transistors et du nombre de niveau de métallisation, la localisation de défaut en analyse se fait principalement par la face arrière du composant. Cette analyse par la face arrière impose l’utilisation systématique de lentille à immersion solide et de la microscopie à balayage laser afin de limiter la contrainte de la résolution spatiale et de la sensibilité. Les objectifs sont de déterminer les dégradations induites par un laser 1340 nm continu sur la technologie 28FDSOI et de fournir un outil de simulation permettant de prédire la dose admissible par les transistors. L’étude commence par la reproduction et la caractérisation du défaut induit par le laser. Les résultats montrent principalement une diffusion des interconnexions grille-contacts en NiPtSi. Basé sur ces observations, un modèle de stimulation laser thermique est construit, puis testé sur une structure élémentaire. Les résultats montrent que la température peut atteindre des valeurs suffisamment élevées pour provoquer la diffusion du siliciure et expliquer les observations. Dans la dernière partie, le modèle est mis à l’épreuve sur des structures réelles. Le défaut est caractérisé paramétriquement en utilisant la cartographie de fréquence. Parallèlement, la simulation est appliquée sur ces mêmes structures. Les résultats montrent une bonne capacité du modèle à prédire le seuil de dégradation des transistors sous stimulation thermique laser. / Faced with the high density of integration of the transistors and the number of metallization level, fault localization in analysis is mainly done by the rear face of the component. This backside analysis requires the systematic use of solid immersion lenses and laser scanning microscopy to limit the stress of spatial resolution and sensitivity. The objectives are to determine the degradation induced by a continuous 1340 nm laser on the 28FDSOI technology and to provide a simulation tool for predicting the allowable dose by the transistors. The study begins with the reproduction and characterization of the laser-induced defect. The results mainly show a diffusion of grid-contact interconnections in NiPtSi. Based on these observations, a model of thermal laser stimulation is built and then tested on an elemental structure. The results show that the temperature can reach sufficiently high values to cause the diffusion of the silicide and to explain the observations. In the last part, the model is put to the test on real structures. The defect is characterized parametrically using frequency mapping. Simultaneously, the simulation is applied to these same structures faithfully. The results show a good ability of the model to predict the degradation threshold of the transistors under laser thermal stimulation.

Plasmonic circuitry is considered as a promising solution-effectivetechnology for miniaturizing and integrating the next generation ofoptical nano-devices. The realization of a practical plasmonic circuitry strongly depends on the complete understanding of the propagation properties of two key elements: surface plasmons and electrons. The critical part constituting the plasmonic circuitry is a waveguide which can sustain the two information-carriers simultaneously. Therefore, we present in this thesis the investigations on the propagation of surface plasmons and the co-propagation of surface plasmons and electrons in single crystalline metal nanowires. This thesis is therefore divided into two parts. In the first part, we investigate surface plasmons propagating in individual thick penta-twinned crystalline silver nanowires using dual-plane leakage radiation microscopy. The effective index and the losses of the mode are determined by measuring the wave vector content of the light emitted in the substrate. Surface plasmon mode is determined by numerical simulations and an analogy is drawn with molecular orbitals compound with similar symmetry. Leaky and bound modes selected by polarization inhomogeneity are demonstrated. We further investigate the effect of wire geometry (length, diameter) on the effective index and propagation losses. On the basis of the results obtained during the first part, we further investigate the effect of an electron flow on surface plasmon properties. We investigate to what extend surface plasmons and current-carrying electrons interfere in such a shared circuitry. By synchronously recording surface plasmons and electrical output characteristics of single crystalline silver and gold nanowires, we determine the limiting factors hindering the co-propagation of electrical current and surface plasmons in these nanoscale circuits. Analysis of wave vector distributions in Fourier images indicates that the effect of current flow on surface plasmons propagation is reflected by the morphological change during the electromigration process. We further investigate the possible crosstalk between co-propagating electrons and surface plasmons by applying alternating current bias

Pas de résumé en français / Plasmonic circuitry is considered as a promising solution-effectivetechnology for miniaturizing and integrating the next generation ofoptical nano-devices. The realization of a practical plasmonic circuitry strongly depends on the complete understanding of the propagation properties of two key elements: surface plasmons and electrons. The critical part constituting the plasmonic circuitry is a waveguide which can sustain the two information-carriers simultaneously. Therefore, we present in this thesis the investigations on the propagation of surface plasmons and the co-propagation of surface plasmons and electrons in single crystalline metal nanowires. This thesis is therefore divided into two parts. In the first part, we investigate surface plasmons propagating in individual thick penta-twinned crystalline silver nanowires using dual-plane leakage radiation microscopy. The effective index and the losses of the mode are determined by measuring the wave vector content of the light emitted in the substrate. Surface plasmon mode is determined by numerical simulations and an analogy is drawn with molecular orbitals compound with similar symmetry. Leaky and bound modes selected by polarization inhomogeneity are demonstrated. We further investigate the effect of wire geometry (length, diameter) on the effective index and propagation losses. On the basis of the results obtained during the first part, we further investigate the effect of an electron flow on surface plasmon properties. We investigate to what extend surface plasmons and current-carrying electrons interfere in such a shared circuitry. By synchronously recording surface plasmons and electrical output characteristics of single crystalline silver and gold nanowires, we determine the limiting factors hindering the co-propagation of electrical current and surface plasmons in these nanoscale circuits. Analysis of wave vector distributions in Fourier images indicates that the effect of current flow on surface plasmons propagation is reflected by the morphological change during the electromigration process. We further investigate the possible crosstalk between co-propagating electrons and surface plasmons by applying alternating current bias