Chan, Man Ki = UV改性的MEH-PPV在用雙層發光結構的多色聚合物發光器件的作用之研究 / 陳文基. / Thesis submitted in: October 2007. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2008. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / Chan, Man Ki = UV gai xing de MEH-PPV zai yong shuang ceng fa guang jie gou de duo se ju he wu fa guang qi jian de zuo yong zhi yan jiu / Chen Wenji. / Abstract --- p.i / 論文摘要 --- p.iii / Acknowledgements --- p.iv / Table of Contents --- p.v / List of Figures --- p.viii / List of Tables --- p.x / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- History --- p.1 / Chapter 1.2 --- Conjugated polymers --- p.2 / Chapter 1.2.1 --- Structure and energy states --- p.2 / Chapter 1.2.2 --- Charge carriers --- p.4 / Chapter 1.2.3 --- Transport of charge carriers --- p.8 / Chapter 1.3 --- Polymer light emitting diodes --- p.8 / Chapter 1.3.1 --- Fabrication and operation --- p.8 / Chapter 1.3.2 --- Improvement of efficiency --- p.10 / Chapter 1.4 --- Full-colour display --- p.13 / Chapter 1.4.1 --- Three colour emissions --- p.13 / Chapter 1.4.2 --- Colour pixels --- p.15 / Chapter 1.5 --- Objectives of present studies --- p.17 / References --- p.20 / Chapter Chapter 2 --- Instrumentation and Experimental Procedures --- p.23 / Chapter 2.1 --- Nitrogen glove box --- p.23 / Chapter 2.2 --- High vacuum deposition system --- p.23 / Chapter 2.3 --- Fabrication of PLEDs --- p.24 / Chapter 2.3.1 --- Integrated fabrication system --- p.24 / Chapter 2.3.2 --- Fabrication procedure --- p.26 / Chapter 2.4 --- Keithley 236 source measure unit --- p.30 / Chapter 2.5 --- Photo Research SpectraColorimeter (PR-650 SpectraScan) --- p.30 / Chapter 2.6 --- Tensor Alpha Step 500 Profilometer --- p.31 / Chapter 2.7 --- Fourier Transform Infrared (FTIR) spectroscopy --- p.31 / Chapter 2.8 --- UV-visible spectroscopy --- p.33 / Chapter 2.9 --- Photoluminescence spectroscopy --- p.35 / References --- p.36 / Chapter Chapter 3 --- Intrinsic and UV-induced properties of MEH-PPV thin films --- p.37 / Chapter 3.1 --- Introduction --- p.37 / Chapter 3.2 --- FTIR studies of MEH-PPV thin films --- p.38 / Chapter 3.2.1 --- Sample preparation --- p.38 / Chapter 3.2.2 --- Results and discussion --- p.39 / Chapter 3.2.3 --- Summary --- p.45 / Chapter 3.3 --- Absorption and photoluminescence studies of MEH-PPV thin films --- p.45 / Chapter 3.3.1 --- Sample preparation --- p.45 / Chapter 3.3.2 --- Results and discussion --- p.46 / Chapter 3.3.3 --- Summary --- p.54 / Chapter 3.4 --- Current-voltage measurement of MEH-PPV thin films --- p.54 / Chapter 3.4.1 --- Sample preparation --- p.54 / Chapter 3.4.2 --- Results and discussion --- p.56 / Chapter 3.4.3 --- Remark --- p.62 / Chapter 3.4.4 --- Summary --- p.62 / Chapter 3.5 --- Conclusion --- p.63 / References --- p.64 / Chapter Chapter 4 --- Two-colour light emitting device using UV modified MEH-PPV layer --- p.67 / Chapter 4.1 --- Introduction --- p.67 / Chapter 4.2 --- Details of fabrication procedures --- p.68 / Chapter 4.3 --- Results and Discussion --- p.70 / Chapter 4.4 --- Conclusion --- p.80 / References --- p.82 / Chapter Chapter 5 --- Concluding remarks and future works --- p.83 / Chapter 5.1 --- Concluding remarks --- p.83 / Chapter 5.2 --- Future works --- p.84

Li, Kwan Ho = 多體量子系統問題 / 李君豪. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references (leaves [243]-246). / Text in English; abstracts in English and Chinese. / Li, Kwan Ho = Duo ti liang zi xi tong wen ti / Li Junhao. / Abstract --- p.i / Acknowledgment --- p.iv / Chapter I --- Computational Quantum Mechanics and Its Applications --- p.1 / Chapter 1 --- Theoretical Methodology of Electronic Structures --- p.2 / Chapter 1.1 --- The Schrodinger Equation --- p.3 / Chapter 1.2 --- Molecular Hamiltonian and Born-Oppenheimer Approximation --- p.4 / Chapter 1.3 --- The Variational Method --- p.7 / Chapter 1.3.1 --- Rayleigh-Ritz Variation Principle --- p.7 / Chapter 1.3.2 --- Linear Variation --- p.8 / Chapter 1.4 --- Many-Electron Wavfunction --- p.9 / Chapter 1.4.1 --- Hartree-product Wavefunction --- p.9 / Chapter 1.4.2 --- Slater Determinant and the Pauli Exclusion Principle --- p.11 / Chapter 1.5 --- The Expectation Value of Total Electronic Energy --- p.13 / Chapter 1.6 --- Derivation of the Hartree-Fock Equations --- p.16 / Chapter 1.7 --- Orbital Energies and the SCF Total Electronic Energy --- p.19 / Chapter 1.8 --- Koopmans' Theorem --- p.20 / Chapter 1.9 --- The LCAO expansion and Self-Consistent Field Calculation --- p.22 / Chapter 1.10 --- AO Basis Sets --- p.23 / Chapter 1.10.1 --- Slater-Type Orbitals --- p.24 / Chapter 1.10.2 --- Gaussian Functions --- p.24 / Chapter 1.11 --- Hartree-Fock Limit --- p.25 / Chapter 1.12 --- Electron Correlation --- p.26 / Chapter 1.12.1 --- Weakness in the Single Determinantal Wavefunction --- p.26 / Chapter 1.12.2 --- Configuration Interaction --- p.26 / Chapter 1.13 --- Density Functional Theory --- p.27 / Chapter 1.13.1 --- Early approximations --- p.28 / Chapter 1.13.2 --- Hohenberg-Kohn Theorems --- p.31 / Chapter 1.13.3 --- Kohn-Sham (KS) Method --- p.33 / Chapter 1.13.4 --- Exchange-Correlation Energy Functional and B3LYP --- p.36 / Chapter 2 --- Theoretical Investigation of Oxadiazole-Triphenylamine Based Compounds --- p.40 / Chapter 2.1 --- Organic Light Emitting Diode and Oxadiazole-Triphenylamine Based Com- pounds --- p.40 / Chapter 2.2 --- Methodology --- p.42 / Chapter 2.2.1 --- Theoretical Methodology --- p.42 / Chapter 2.2.2 --- Computational Methodology --- p.46 / Chapter 2.3 --- Computational Results --- p.47 / Chapter 2.3.1 --- Molecular Structure --- p.47 / Chapter 2.3.2 --- Electronic Structure --- p.79 / Chapter 2.4 --- Absorption and Emission Energy --- p.94 / Chapter 2.5 --- Reorganization Energy and Mobility --- p.95 / Chapter 2.6 --- Summary --- p.99 / Chapter 3 --- The Transport Properties of Oligoacenes --- p.102 / Chapter 3.1 --- Introduction --- p.102 / Chapter 3.2 --- Computational Details --- p.103 / Chapter 3.3 --- Results and Discussions --- p.103 / Chapter 3.3.1 --- Molecular Configuration --- p.103 / Chapter 3.3.2 --- Reorganization Energy --- p.106 / Chapter 3.3.3 --- Coupling Matrix Element --- p.107 / Chapter 3.4 --- Conclusion --- p.133 / Chapter 4 --- The Transport Properties in Rubrene Thin Film and Crystal --- p.135 / Chapter 4.1 --- Introduction --- p.135 / Chapter 4.2 --- Computational Details --- p.137 / Chapter 4.3 --- Results and Discussions --- p.137 / Chapter 4.3.1 --- Molecular Structure --- p.137 / Chapter 4.3.2 --- Frontier Orbitals --- p.144 / Chapter 4.3.3 --- Reorganization Energy --- p.147 / Chapter 4.3.4 --- Coupling Matrix Element and Mobility --- p.147 / Chapter 4.4 --- Conclusion --- p.175 / Chapter II --- Analytical Studies of Anisotropic Spin-1/2 Heisenberg Anti-ferromagnetic Linear Chains --- p.177 / Chapter 5 --- Coupled-Cluster Approximation for Two Anisotropic Spin-1/2 Heisenberg Antiferromagnetic Linear Chains with Inter-chain Anisotropic Ferromagnetic Interaction --- p.178 / Chapter 5.1 --- Introduction --- p.178 / Chapter 5.2 --- Approximation in the Coupled-Cluster Method --- p.179 / Chapter 5.3 --- Anisotropic spin-1/2 Heisenberg Antiferromagnetic Model in One Dimension --- p.183 / Chapter 5.3.1 --- The Zeroth Level --- p.185 / Chapter 5.3.2 --- The First Level --- p.186 / Chapter 5.3.3 --- The Second Level --- p.189 / Chapter 5.4 --- Two Anisotropic Spin-1/2 Heisenberg Antiferromagnetic Linear Chains with Inter-chain Anisotropic Ferromagnetic Interaction --- p.198 / Chapter 5.4.1 --- The Zeroth Level --- p.199 / Chapter 5.4.2 --- The First Level --- p.201 / Chapter 5.4.3 --- The Second Level --- p.206 / Chapter 5.5 --- Conclusion --- p.242 / Bibliography --- p.243

Lo Loc Ping = 多體量子系統問題 / 盧樂平. / Thesis submitted in: October 2004. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2005. / Includes bibliographical references (leaves 168-171). / Text in English; abstracts in English and Chinese. / Lo Loc Ping = Duo ti liang zi xi tong wen ti / Lu Leping. / Abstract --- p.i / 摘要 --- p.ii / Acknowledgment --- p.iii / Chapter I --- Computational Quantum Mechanics and Its Applications 電算量子力學及其應用 --- p.1 / Chapter 1 --- An Overview of Quantum Mechanics and Some Important Tools of Theory --- p.2 / Chapter 1.1 --- The Schrodinger Equation --- p.2 / Chapter 1.2 --- The Variational Method --- p.4 / Chapter 1.2.1 --- Rayleigh-Ritz Approach --- p.4 / Chapter 1.2.2 --- Linear Variation --- p.5 / Chapter 2 --- Theoretical Methodology of Electronic Structures: Ab Initio Molecular Orbital Theory --- p.7 / Chapter 2.1 --- The Molecular Hamiltonian --- p.7 / Chapter 2.2 --- Hartree Description and Linear Combination of Atomic Orbitals Expan- sion --- p.8 / Chapter 2.3 --- Slater Determinant and the Pauli Exclusion Principle --- p.9 / Chapter 2.4 --- The Expansion of E in Terms of Integrals over MOs --- p.11 / Chapter 2.5 --- Derivation of the Hartree´ؤFock Equations --- p.15 / Chapter 2.6 --- The Self-Consistent Field Calculation --- p.18 / Chapter 2.7 --- Koopmans' Theorem --- p.19 / Chapter 2.8 --- Orbital and the Total SCF Electronic Energy --- p.20 / Chapter 2.9 --- AO Basic Sets --- p.21 / Chapter 2.9.1 --- Slater-Type Orbitals --- p.21 / Chapter 2.9.2 --- Gaussian Functions --- p.22 / Chapter 2.10 --- The Hartree-Fock Limit --- p.23 / Chapter 2.11 --- Electron Correlation --- p.23 / Chapter 2.11.1 --- Weakness in the Single Determinant Model --- p.23 / Chapter 2.11.2 --- Configuration Interaction --- p.24 / Chapter 2.11.3 --- The Coupled-Cluster Method --- p.25 / Chapter 2.11.4 --- Density Functional Theory --- p.26 / Chapter 2.12 --- Frontier Orbitals --- p.31 / Chapter 3 --- Theoretical Investigation of the Interaction between Metal and Tris(8- hydroxyquinoline) aluminum in Organic Light Emitting Diodes --- p.32 / Chapter 3.1 --- Organic Light Emitting Diodes and Tris(8-hydro-xyquinoline) aluminum --- p.32 / Chapter 3.2 --- Computational Methodology --- p.33 / Chapter 3.3 --- Alq3 --- p.34 / Chapter 3.3.1 --- Molecular Structure --- p.34 / Chapter 3.3.2 --- Electronic Structure --- p.36 / Chapter 3.3.3 --- Transition and Relaxation Energies --- p.44 / Chapter 3.3.4 --- Interactions with Metals --- p.45 / Chapter 3.4 --- "Li-Alq3, Na-Alq3 and K-Alq3 Complexes" --- p.46 / Chapter 3.4.1 --- Molecular Structure --- p.46 / Chapter 3.4.2 --- Ground-State Electronic Structure --- p.55 / Chapter 3.4.3 --- Transition and Relaxation Energies --- p.67 / Chapter 3.5 --- "Be-Alq3, Mg´ؤAlq3 and Ca´ؤAlq3 Complexes" --- p.68 / Chapter 3.5.1 --- Molecular Structure --- p.68 / Chapter 3.5.2 --- Ground-State Electronic Structure --- p.76 / Chapter 3.5.3 --- Transition and Relaxation Energies --- p.87 / Chapter 3.6 --- "B-Alq3, Al-Alq3 and Ga-Alq3 Complexes" --- p.87 / Chapter 3.6.1 --- Molecular Structure --- p.87 / Chapter 3.6.2 --- Ground-State Electronic Structure --- p.95 / Chapter 3.6.3 --- Transition and Relaxation Energies --- p.106 / Chapter II --- Analytical Studies of Polarons and the Electron-Phonon Interaction 極子與電子一聲子相互作用的 解析研究 --- p.107 / Chapter 4 --- Optimal Coupled-Cluster Approximation of the Ground-State Energy of the E× (α1 + α1) Jahn-Teller System --- p.108 / Chapter 4.1 --- The Jahn-Teller Effect --- p.108 / Chapter 4.2 --- Approximation in the Coupled-Cluster Method and the Jahn-Teller Hamiltonian --- p.110 / Chapter 4.3 --- Variational Coupled-Cluster Approximation --- p.112 / Chapter 4.3.1 --- The Zeroth Level --- p.113 / Chapter 4.3.2 --- The First Level --- p.113 / Chapter 4.3.3 --- The Second and the Third Levels --- p.114 / Chapter 4.4 --- An 'Optimal' Hamiltonian --- p.115 / Chapter 4.5 --- Treatment for the k> 1 Case --- p.117 / Chapter 4.6 --- Energies and Other Physical Phenomena --- p.118 / Chapter 5 --- Small-to-Large Ground-State Polaron Crossover in One-Dimension Extended E×e Jahn-Teller System Using Variational Coupled-Cluster Approximation --- p.134 / Chapter 5.1 --- Polaron Formation --- p.134 / Chapter 5.2 --- Model Hamiltonian and the MLF Transformation --- p.135 / Chapter 5.3 --- Variatonal Coupled-Cluster Approximation --- p.137 / Chapter 5.3.1 --- Zeorth Level --- p.139 / Chapter 5.3.2 --- First Level --- p.139 / Chapter 5.3.3 --- Second Level --- p.142 / Chapter 5.4 --- Energies and Static Correlation Functions --- p.142 / Chapter 5.5 --- Approximate Form of the MLF Transformation for K = 0 --- p.153 / Chapter 5.5.1 --- Zeroth Level --- p.154 / Chapter 5.5.2 --- First Level --- p.155 / Chapter 5.5.3 --- Second Level --- p.156 / Chapter 5.5.4 --- Energies and Static Correlation Functions --- p.157 / Chapter 5.6 --- Synopsis --- p.167 / Bibliography --- p.171

by Xu Mingsheng. / "October 2002." / Thesis (Ph.D.)--Chinese University of Hong Kong, 2002. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Electronic reproduction. Ann Arbor, MI : ProQuest Information and Learning Company, [200-] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web.

[Truncated abstract] Over the past decade, the group III-nitride semiconducting compounds (GaN, AlN, InN, and their alloys) have attracted tremendous research efforts due to their unique electronic and optical properties. Their low thermal carrier generation rates and large breakdown fields make them attractive for the development of robust electronic devices capable of reliable operation in extreme conditions, i.e. at high power/voltage levels, high temperatures and in radiation environments. For device applications in radiation environments, such as space electronics, GaN-based devices are expected to manifest superior radiation hardness and reliability without the need for cumber- some and expensive cooling systems and/or radiation shielding. The principle aim of this Thesis is to ascertain the level of susceptibility of current GaN-based elec- tron devices to radiation-induced degradation, by undertaking a detailed study of 60Co gamma-irradiation-induced defects and defect-related effects on the electrical characteristics of n-type GaN-based materials and devices . . . While the irradiation-induced effects on device threshold voltage could be regarded as relatively benign (taking into account that the irradiation levels employed in this study are equivalent to more than 60 years exposure at the average ionising dose rate levels present in space missions), the observed device instabilities and the degradation of gate current characteristics are deleterious effects which will have a significant impact on the performance of AlGaN/GaN HEMTs operating in radiation environments at low temperatures, a combination of conditions which are found in spaceborne electronic systems.