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High resolution electroluminescent display using active matrix approachKhormaei, Iranpour 22 November 1994 (has links)
Graduation date: 1995
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Electrical and optical measurements on a.c. thin-film electro-luminescent devices /Yang, Kei-wean Calvin. January 1981 (has links)
Thesis (Ph. D.)--Oregon State University, 1982. / Typescript (photocopy). Includes bibliographical references (leaves 174-179). Also available on the World Wide Web.
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Alternating-current thin-film electroluminescent device physics and modelingDouglas, Allan A. 27 April 1993 (has links)
Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the
formation of pixels in flat panel displays. ACTFEL flat panel displays have many
advantages over other flat panel technologies. Specifically, ACTFEL panels are emissive
displays, they have high brightness, wide viewing angles, and rugged construction.
Although much is already known about the operation of ACTFEL devices, several topics
related to the device physics and modeling of these devices require further research.
In this work, existing ACTFEL device models are refined by expanding the
understanding of ACTFEL device physics and operation. Modeling is separated into three
levels of increasing complexity as follows; (1) equivalent circuit modeling, (2) device
physics or electrostatic modeling, or (3) Monte Carlo modeling. Each level of model is
addressed in this thesis. Existing equivalent circuit models are empirically refined to
account for device response to variations in the shape of the driving waveform pulse. The
device physics model is expanded by presenting evidence for the formation of space
charge in the phosphor layer and the equations prescribing device response are modified
accordingly. Also, a new technique for measuring the distribution of interface states in
ACTFEL devices is presented. This gives new insight into device operation, as the
interface state distribution is one of the most difficult parameters to estimate/measure in
the device physics model. Finally, an experiment is presented which attempts to measure
the maximum energy of hot electrons during conduction in the phosphor. This research
leads to a recommendation of the complexity of the conduction band model needed for
accurate Monte Carlo simulation of ACTFEL devices. / Graduation date: 1993
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Phosphor development for alternating-current thin-film electroluminescent applicationsNguyen, Tin T. 29 June 1993 (has links)
Graduation date: 1994
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Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devicesHitt, John C. 15 August 1997 (has links)
Graduation date: 1998
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Electro-optic characterization of SrS-based alternating current thin-film electroluminescent devicesNevers, Corey A. 30 April 1999 (has links)
Two methods of electro-optically characterizing alternating-current thin-film electroluminescent
(ACTFEL) devices are investigated: photo-induced transferred charge
(PIQ) and luminescence (PIL), and subthreshold voltage-induced transferred charge (VIQ)
techniques. Both techniques provide information related to traps within the phosphor
layer. PIQ/PIL experiments monitor the transport of electrons and holes across the phosphor
layer which are photo-injected by a UV laser pulse. VIQ experiments monitor the
optical reset of traps ionized by bipolar subthreshold voltage pulses.
PIQ/PIL experiments are performed on three different SrS ACTFEL devices: ALE-deposited
SrS:Ce, sputter-deposited SrS:Cu, and undoped MOCVD-deposited SrS. From
the PIQ/PIL experiments, two distinct electron thresholds in the luminescent impurity
doped samples at ~0.8 (weak threshold) and ~1.2 MV/cm (strong threshold) are observed.
These thresholds are independent of the phosphor thickness, indicating that they
arise from a bulk property of the phosphor. The ~0.8 MV/cm weak threshold is attributed
to field emission of relatively shallow (~0.6 eV) electron-emitting bulk traps (e.g. cerium
or oxygen for SrS:Ce; a sulfur vacancy or oxygen for SrS:Cu). The ~1.2 MV/cm strong
threshold is ascribed to the onset of trap-to-band impact ionization. In contrast to electron
transport, PIQ/PIL studies reveal no hole transport in SrS doped with luminescent
impurities, although hole transport is observed for an undoped SrS ACTFEL device. The
lack of hole transport is attributed to the efficiency of hole capture in SrS doped with
luminescent impurities.
VIQ experiments are performed on the same SrS ACTFEL devices. VIQ trap energy
depths are estimated as ~0.1 eV for SrS:Ce; ~0.9 eV for SrS:Cu (with a capture cross-section
of ,~10�������cm��), and ~0.6 eV for undoped SrS. Tenative atomic identification of
traps responsible for these VIQ trends are: chlorine or a Ce shallow donor state for
SrS:Ce, a sulfur vacancy for SrS:Cu, and a sulfur vacancy or an oxygen isoelectronic trap
for undoped SrS. / Graduation date: 2000
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Sine burst waveform aging and electro-optic characterization of ALE ZnS:Mn ACTFEL devices for head-mounted active matrix displaysMendes, James Kevin 07 March 1997 (has links)
Graduation date: 1997
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Impact excitation efficiency in AC-driven thin-film electroluminescent devicesPeter, Manuela 08 February 1996 (has links)
Graduation date: 1996
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Characterization of alternating-current thin-film SrS:Ce electroluminescent devicesThuemler, Robert L. 28 May 1997 (has links)
Graduation date: 1998
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Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphorMueller, Matthew R. 08 September 1994 (has links)
Graduation date: 1995
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