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11	Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors Winkler, Felix, Pešić, Milan, Richter, Claudia, Hoffmann, Michael, Mikolajick, Michael, Bartha, Johann W. 25 January 2022 (has links) So far, only CMOS compatible and scalable hafnia-zirconia (HZO) based ferroelectric (FE) n-FeFETs have been reported. To enable the full ferroelectric hierarchy [1] both p- and n-type devices should be available. Here we report a p-FeFET with a large memory window (MW) for the first time. Moreover, we propose different integration schemes comprising structures with and without internal gate resulting in metal-FE-insulator-Si (MFIS) and metal-FE-metal-insulator-Si (MFMIS) devices which could be used to tackle the problem of interface (IF) degradation and possibly decrease the power consumption of the devices. info:eu-repo/classification/ddc/621.3 ddc:621.3
12	ELECTRONIC AND OPTICAL PROPERTIES OF FIRST-ROW TRANSITION METALS IN 4H-SIC FOR PHOTOCONDUCTIVE SWITCHING Timothy Sean Wolfe (11203593) 29 July 2021 (has links) <div>Photoconductive Semiconductor Switches (PCSS) are metal-semiconductor-metal devices used to switch an electrical signal through photoconduction. Rapidly switched PCSS under high bias voltages have shown remarkable potential for high power electronic and electromagnetic wave generation, but are dependent on precise optoelectronic material parameters such as defect ionization energy and optical absorption. These properties can be measured but are difficult to attribute definitively to specific defects and materials without the aid of high-accuracy, predictive modeling and simulation. This work combines well-established methods for first principles electronic structure calculations such as Density Functional Theory (DFT) with novel modern approaches such as Local Moment Counter Charge (LMCC) boundary conditions to adequately describe charge states and Maximally Localized Wannier Functions (MLWF) to render the summation of optical excitation paths as computationally tractable. This approach is demonstrated to overcome previous barriers to obtaining reliable qualitative or quantitative results, such as DFT band gap narrowing and the prohibitive computational cost of coupled electron-phonon processes. This work contributes electronic structure calculations of 4H-SiC doped with first-row transition metals (V through Ni) that are consistent with prior published work where applicable and add new possibilities for prospective semi-insulating metal-semiconductor systems where investigating new dopant possibilities. The results indicate a spectrum of highly localized, mid-gap, spin-dependent defect energy levels which suggest a wider range of potential amphoteric dopants suitable for producing semi-insulating material. Additionally, this work contributes MLWF-based calculations of phonon-resolved optical properties in 3C and 4H-SiC, indirect gap semiconductors, which accurately produce the expected onset of optical absorption informed by experiment. These results were further expanded upon with small V-doped cells of 4H-SiC, which while not fully converged in terms of cell size still provided a qualitative point of comparison to the ground state results for determining the true optical excitation energy required for substantial photoconductivity. The subsequent speculative analysis suggests the importance of anisotropic absorption and alternative metal defects for optimizing high current optoelectronic devices such as PCSS.</div> Condensed Matter Physics Elemental Semiconductors Optical Properties of Materials Theory and Design of Materials Nanomaterials electrical engineering semiconductor physics optical properties modeling and simulation density functional theory Wannier functions Transition Metal Atoms
13	Self organized formation of Ge nanocrystals in multilayers Zschintzsch-Dias, Manuel 05 June 2012 (has links) (PDF) The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated. Mostly the focus of this work is on the determination of the proper deposition conditions for tuning the composition of the systems investigated. For the GeOx/SiO2 multilayers this involves changing the GeOx composition between elemental Ge (x = 0) and GeO2 (x = 2), whereas for the Ge:SiOx~ 2/SiO2 multilayers this involves changing the stoichiometry of the Ge:SiOx~ 2 sublayers in the vicinity of stochiometric silica (x = 2). The deposition conditions are controlled by the variation of the deposition rate, the deposition temperature and the oxygen partial pressure. A convenient process window has been found which allows the sequential deposition of GeOx/SiO2 or Ge:SiOx ~2/SiO2 without changing the oxygen partial pressure during deposition. For stoichiometry determination Rutherford back-scattering spectrometry has been applied extensively. The phase separation in the spatially confined GeOx and Ge:SiOx ~2 sublayers was investigated by X-ray absorption spectroscopy at the Ge K-edge. The Ge sub-oxides content of the as-deposited multilayers diminishes with increasing annealing temperature, showing complete phase separation at approximately 450° C for both systems (using inert N2 at ambient pressure). With the use of chemical reducing H2 in the annealing atmosphere, the temperature regime where the GeOx phase separation occurs is lowered by approximately 100 °C. At temperatures above 400° C the sublayer composition, and thus the density of the Ge nanocrystals, can be altered by making use of the reduction of GeO2 by H2. The Ge nanocrystal formation after subsequent annealing was investigated with X-ray scattering, Raman spectroscopy and electron microscopy. By these methods the existence of 2 - 5 nm Ge nanocrystals at annealing temperatures of 550 (GeOx) - 700° C (Ge:SiOx ~2) has been confirmed which is within the multilayer stability range. The technique used allows the production of extended multilayer stacks (50 periods ~ 300 nm) with very smooth interfaces (roughness ~ 0.5 nm). Thus it was possible to produce Ge nanocrystal layers with ultra-thin SiO2 separation layers (thickness ~ 1 nm) which offers interesting possibilities for charge transport via direct tunneling. Photovoltaik Strukturaufklärung Raman-Spektroskopie Rutherford Back Scattering XANES Röntgendiffraktometrie Nanokristall Mehrschichtsystem Germanium Siliciumdioxid Silicium Reaktives Sputtern Entmischung Tunneleffekt Durchstrahlungselektronenmikroskop Quantenpunkt Tempern annealing elemental semiconductors germanium germanium compounds nanofabrication nanoparticle nanocrystal quantum dot phase separation Raman spectra semiconductor growth semiconductor thin films silicon compounds silica reactive sputter deposition superlattice multilayer transmission electron microscopy tunnelling x-ray scattering photovoltaics rutherford back scattering XANES ddc:530 rvk:UM 3300 rvk:UQ 2000 Photovoltaik Strukturaufklärung Raman-Spektroskopie Rutherford Back Scattering XANES Röntgendiffraktometrie Nanokristall Mehrschichtsystem Germanium Siliciumdioxid Silicium Reaktives Sputtern Entmischung Tunneleffekt Durchstrahlungselektronenmikroskop Quantenpunkt Tempern
14	Self organized formation of Ge nanocrystals in multilayers Zschintzsch-Dias, Manuel 27 April 2012 (has links) The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated. Mostly the focus of this work is on the determination of the proper deposition conditions for tuning the composition of the systems investigated. For the GeOx/SiO2 multilayers this involves changing the GeOx composition between elemental Ge (x = 0) and GeO2 (x = 2), whereas for the Ge:SiOx~ 2/SiO2 multilayers this involves changing the stoichiometry of the Ge:SiOx~ 2 sublayers in the vicinity of stochiometric silica (x = 2). The deposition conditions are controlled by the variation of the deposition rate, the deposition temperature and the oxygen partial pressure. A convenient process window has been found which allows the sequential deposition of GeOx/SiO2 or Ge:SiOx ~2/SiO2 without changing the oxygen partial pressure during deposition. For stoichiometry determination Rutherford back-scattering spectrometry has been applied extensively. The phase separation in the spatially confined GeOx and Ge:SiOx ~2 sublayers was investigated by X-ray absorption spectroscopy at the Ge K-edge. The Ge sub-oxides content of the as-deposited multilayers diminishes with increasing annealing temperature, showing complete phase separation at approximately 450° C for both systems (using inert N2 at ambient pressure). With the use of chemical reducing H2 in the annealing atmosphere, the temperature regime where the GeOx phase separation occurs is lowered by approximately 100 °C. At temperatures above 400° C the sublayer composition, and thus the density of the Ge nanocrystals, can be altered by making use of the reduction of GeO2 by H2. The Ge nanocrystal formation after subsequent annealing was investigated with X-ray scattering, Raman spectroscopy and electron microscopy. By these methods the existence of 2 - 5 nm Ge nanocrystals at annealing temperatures of 550 (GeOx) - 700° C (Ge:SiOx ~2) has been confirmed which is within the multilayer stability range. The technique used allows the production of extended multilayer stacks (50 periods ~ 300 nm) with very smooth interfaces (roughness ~ 0.5 nm). Thus it was possible to produce Ge nanocrystal layers with ultra-thin SiO2 separation layers (thickness ~ 1 nm) which offers interesting possibilities for charge transport via direct tunneling.:Contents 1 Introduction and motivation 1 2 Basic aspects 6 2.1 Microstructure of sub-stoichiometric oxides (SiOx, GeOx) 6 2.2 Phase transformations 9 2.3 Quantum confinement effect in nanocrystals 12 2.4 Applications of nanostructures in 3rd generation photovoltaics 17 3 Experimental setup 21 3.1 The magnetron deposition chamber 21 3.2 (Reactive) dc sputtering 22 3.3 Annealing processing 26 3.4 X-ray facilities 26 4 Analytical methods 30 4.1 Rutherford backscattering spectrometry (RBS) 30 4.2 Raman scattering 33 4.3 (Grazing incidence) X-ray diffraction (GIXRD) 35 4.4 X-ray reflectivity (XRR) 39 4.5 X-ray absorption near edge structure (XANES) 41 4.6 Transmission electron microscopy (TEM) 42 5 Properties of reactive dc magnetron sputtered Si-Ge-O (multi)layers 44 5.1 Deposition rate and film stoichiometry investigations 44 5.2 Stoichiometry dependent properties of GeOx/SiO2 multilayers 47 5.3 Lateral intercluster distance of the Ge nanocrystals in multilayers 51 6 Confined Ge nanocrystal growth in GeOx/SiO2 multilayers 54 6.1 Phase separation in GeOx single layers and GeOx/SiO2 multilayers 54 6.2 Crystallization in GeOx single layers and GeOx/SiO2 multilayers 58 6.3 Multilayer stability and smallest possible Ge nanocrystal size 60 6.4 Stacked Ge NC films with ultra thin SiO2 separation layers 66 7 Confined Ge nanocrystal growth in Ge:SiOx/SiO2 multilayers 71 7.1 Phase separation in Ge:SiOx/SiO2 multilayers 72 7.2 Crystallisation in Ge:SiOx/SiO2 multilayers 76 8 Summary and conclusions 79 List of Figures 83 List of Tables 85 Bibliography 86 info:eu-repo/classification/ddc/530 ddc:530

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