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Characterization of as-grown and annealed narrow band gap nitrides grown by molecular beam epitaxyReifsnider, Jason Miles, 1967- 13 July 2011 (has links)
Not available / text
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Heteroepitaxial growth of InN on GaN by molecular beam epitaxy吳誼暉, Ng, Yee-fai. January 2002 (has links)
published_or_final_version / abstract / toc / Physics / Doctoral / Doctor of Philosophy
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Growth phenomena and domain formation in ferroelectric thin filmsKwak, Byung-Sung Leo 08 1900 (has links)
No description available.
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Surface reaction kinetics of molecular beam epitaxial growth of CdTeBenson, J. David 12 1900 (has links)
No description available.
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Molecular beam epitaxial and chemical beam epitaxial growth and doping studies of (001) CdTeRajavel, Damodaran 08 1900 (has links)
No description available.
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Thermodynamics and surface kinetics of the growth and doping of HgCdTe heterostructures by metalorganic molecular beam epitaxyParikh, Ashesh 05 1900 (has links)
No description available.
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Indium Nitride: An Investigation of Growth, Electronic Structure and DopingAnderson, Phillip Alistair January 2006 (has links)
The growth, electronic structure and doping of the semiconductor InN has been explored and analysed. InN thin films were grown by plasma assisted molecular beam epitaxy. The significance of the relative fluxes, substrate temperature and buffer layers was explored and related to the electrical and structural properties of the films. An exploration of the effect of active nitrogen species on InN films found that excited molecular nitrogen was preferred for growth over atomic and ionic species. An optimised recipe for InN was developed incorporating all explored parameters. The bandgap of InN was explored using the techniques of optical absorption, photoluminescence and photoconductivity. All three techniques identified a feature near 0.67 eV as the only dominant and reproducible optical feature measurable from InN thin films. No evidence for any optical features above 1 eV was discovered. The effect of the Burstein-Moss effect is discussed and the debate over the relative impact of the effect is related to problems with precisely measuring electron concentrations. Photoluminescence from mixed phase InN films containing significant zincblende content is presented, with tentative evidence presented for a zincblende band gap near 0.61 eV. Native defects within InN were studied by near edge X-ray absorption fine structure spectroscopy. Nitrogen related defects were found to be unlikely candidates for the high as-grown n-type conductivity. The most likely candidate remains nitrogen vacancies. Ion implantation was shown to cause substantial damage to the InN lattice, which could not be fully repaired through annealing. The limitation on annealing temperatures may limit the use of implantation as a processing tool for InN. Mg was shown to exhibit great promise as a potential p-type dopant. Photoluminescence from Mg doped films was found to quench at high Mg concentrations, consistent with a depletion region near the surface. The potential dilute magnetic semiconductor In1-xCrxN was explored. All of the In1-xCrxN films were found to be ferromagnetic at room temperature and exhibited saturated magnetic moments of up to 0.7 emu/g. An interesting correlation between background electron concentration and remnant moment is presented and the consequences of theoretical exchange models discussed. The bandgap of chromium nitride was also investigated and found to be an indirect gap of 0.7 eV.
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A high resolution x-ray diffractometer for studying crystal epitaxy /Shi, Yushan January 1987 (has links)
No description available.
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The growth of epitaxial iron oxides on platinum (111) as studied by x-ray photoelectron diffraction, scanning tunneling microscopy, and low energy electron diffractionKim, Yong-ju January 1995 (has links)
Thesis (Ph. D.)--University of Hawaii at Manoa, 1995. / Includes bibliographical references. / Microfiche. / xxi, 170 leaves, bound ill. 29 cm
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GSMBE growth on V-groove patterned substrates for InP-based quantum wires /Wang, Jun. January 1997 (has links)
Thesis (Ph.D) -- McMaster University, 1997. / Includes bibliographical references (leaves 130-139). Also available via World Wide Web.
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