München, Universiẗat der Bundeswehr, Diss., 2003.

University, Diss., 1999--Dortmund. / Dateiformat: PDF.

of the thesis: The thesis deals with the fair and equitable standard of treatment under international investment law. The author notably analyzes scholarly literature and case law of arbitral tribunals concerning the theoretical concept (approach) considering the connection to the minimum standard of treatment under customary international law, but also other approaches depending on the standard's formulation and the possibility of the standard's concept unification. The author firstly puts the fair and equitable standard of treatment into the context of the international investment law and public international law and defines the most important basic terms of the international investment law. Subsequently, the author presents the history of the standard, its basic characteristics and attempts at defining the standard. The author also shortly deals with the content, i. e. individual elements or aspects of the standard derived from the case law of arbitral tribunals. The author then deals in more detail with the standard's concept according to which the standard is equal to the minimum international standard of treatment under customary international law. In this part, the author also focuses on the distinction between minimum standard of treatment in traditional view and dynamic view, next the...

A graphene field-effect-transistor (GFET) model calibrated with extracted device parameters and a commercial 65 nm silicon MOSFET model are compared with respect to their radio frequency behavior. GFETs slightly lag behind CMOS in terms of speed despite their higher mobility. This is counterintuitive, but can be explained by the effect of a strongly nonlinear voltage-dependent gate capacitance. GFETs achieve their maximum performance only for narrow ranges of V-DS and I-DS, which must be carefully considered for circuit design. For our parameter set, GFETs require at least mu = 3000 cm(2) V-1 s(-1) to achieve the same performance as 65 nm silicon MOSFETs. / <p>QC 20130115</p>

Berlin, Techn. University, Diss., 2007.

Bochum, Univ., Diss., 2001. / URN: urn:nbn:de:hbz:294-4177.

Thesis--Brunswick. / In Periodical Room.

Thesis--Brunswick. / In Periodical Room.

Universiẗat, Diss., 2002--München.

Hannover, Universiẗat, Diss., 2002.