No description available.

Xu Chicheng = 光折变掺铁铌酸锂晶体中的二波耦合和光伏空间孤子 / 徐赤诚. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2004. / Includes bibliographical references (leaves 113-114). / Text in English; abstracts in English and Chinese. / Xu Chicheng = guang zhe bian shan tie ni suan li jing ti zhong de er bo ou he he guang fu kong jian gu zi / Xu Chicheng. / Acknowledgements --- p.i / Abstract --- p.ii / Table of Contents --- p.v / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Background --- p.5 / Chapter 2.1 --- Band Transport Model --- p.5 / Chapter 2.2 --- Two-wave Mixing --- p.9 / Chapter 2.3 --- Fanning --- p.12 / Chapter 2.4 --- Photovoltaic Effect --- p.16 / Chapter 2.5 --- Spatial Solitons --- p.19 / References --- p.22 / Appendix Refractive Index perturbation in LiNb03 crystal --- p.25 / Chapter Chapter 3 --- Single Laser Beam Interactions with Fe:LiNb03 Crystals / Chapter 3.1 --- Fe:LiNb03 Crystals --- p.30 / Chapter 3.2 --- Interferometric Studies of Refractive Index Perturbations --- p.32 / Chapter 3.3 --- Fanning --- p.47 / Chapter 3.4 --- Self-defocusing --- p.53 / Chapter 3.5 --- Surface Charge Recombination --- p.58 / References --- p.67 / Chapter Chapter 4 --- Photovoltaic Spatial Soliton in Fe:LiNb03 Crystal --- p.69 / Chapter 4.1 --- Introduction --- p.69 / Chapter 4.2 --- Experimental Setup --- p.73 / Chapter 4.3 --- Results and Discussion --- p.75 / Chapter 4.4 --- Conclusion --- p.82 / References --- p.83 / Chapter Chapter 5 --- Two-wave Mixing in Fe:LiNbO3 Crystals --- p.84 / Chapter 5.1 --- Introduction --- p.84 / Chapter 5.2 --- Experimental Setup --- p.87 / Chapter 5.3 --- Results and Discussion I - Without Background Beam --- p.89 / Chapter 5.4 --- Result and Discussion II - With Background Beam --- p.96 / Chapter 5.5 --- Origin of Temporal oscillations during TWM in Fe:LiNb03 Crystal --- p.100 / Chapter 5.6 --- Conclusion --- p.108 / References --- p.109 / Chapter Chapter 6 --- Conclusion and Future Outlook --- p.111

published_or_final_version / Mechanical Engineering / Doctoral / Doctor of Philosophy

No description available.

Thesis (Ph. D.)--Lehigh University, 2004. / Includes vita. Includes bibliographical references (leaves 148-154).

Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references. Available also in a digital version from Dissertation Abstracts.

Thesis (Ph. D.)--Drexel University, 2003. / Includes abstract and vita. Includes bibliographical references (leaves 145-152).

Solar cells have been traditionally developed for optimizing three key steps for charge carriers: generation, separation, and transport. Conventional solar cells are essentially PN junction based, and utilize the internal electric field near the junction interface for realizing charge carrier separation. However, this kind of structure limits material choices and device fabrication to form a working junction due to issues such as lattice mismatch, doping, and band alignment. Ferroelectric photovoltaic devices with typical capacitor structure have been developed to overcome the junction caused disadvantage but suffer from the poor charge transport issue. In this work, novel ferroelectric-semiconductor photovoltaic devices were developed and investigated in detail with experimental results and theoretical simulation. This type of solar cell is fundamentally different with traditional PN junction based solar cells, utilizing ferroelectric polarization for charge separation in semiconductor layer. Systematical works have been conducted on: (1) device working principle and mechanism study; (2) effect of electrode; (3) influence of device key dimension parameters. The new cells showed the rectifying behavior and effective photovoltaic effect after specific asymmetric polarization. Furthermore, the device performance has been improved through adjusting electrode design and semiconductor layer thickness, which is mainly due to the optimized electric field strength and distribution resulting from polarization. As low cost commercial semiconductor, the multicrystalline silicon (mc-Si) has great potential application in the novel ferroelectric-semiconductor photovoltaic devices. However, the grain boundaries with high density of defects limit the material electric properties. In order to improve the multicrystalline silicon transport property, a polar molecules system was developed to play the role in grain boundaries passivation. The small polar molecule composition and solution passivation process were carried out to optimize the passivation effect. The result showed the developed ZK series solutions reduced the Rsheet across large-angle grain boundaries by up to more than one order to be close to the bulk Rsheet. Also, the correlation between the grain misorientation and passivation effectiveness was built up. / published_or_final_version / Mechanical Engineering / Doctoral / Doctor of Philosophy

Thesis (Ph.D.)--University of Nebraska-Lincoln, 2008. / Title from title screen (site viewed Apr. 9, 2009). PDF text: xvii, 113 p. : ill. (some col.) ; 3 Mb. UMI publication number: AAT 3339351. Includes bibliographical references. Also available in microfilm and microfiche formats.

Two types of devices employing ferroelectric modulation of a semiconductor thin-film have been realized and studied. The first consists of a cadmium selenide film with electrodes deposited on a barium titanate substrate together with a switching electrode on the other side of the substrate. This gives a two-valued resistor; in effect, a nondestructive readout of the state of the ferroelectric crystal which is regarded as a storage element. The second device is a thin-film transistor (TFT) deposited on a barium titanate crystal. A fourth counterelectrode - on the other side of the crystal allows changing between two opposite polarization directions in the crystal, thus giving a TFT with two sets of characteristics, roughly equivalent to a two-valued built-in gate bias. The read-in, or switching time, of the device is substantially determined by the barium titanate crystal and can be in the microsecond range for high switching fields. Readout of the devices can be continuous or not, as desired. Characteristics of the TFT, which is considered equivalent to a two-gate device, are analyzed in terms of the gradual channel approximation. Experimental results of the two devices are presented and discussed in relation to the predicted behaviour. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate