Photovoltaic (PV) modules based on thin film systems of CuInSe2 (CIS) and its alloys on low cost substrates are promising candidates to meet the long term efficiency, reliability and manufacturing cost goals. The attention to the CIS solar cell technology is because of the high absorption coefficient of the solar cell absorber layer. Solar cells and PV modules are conventionally assessed by measuring the currentvoltage characteristic of the device. This thesis presents an assessment procedure developed capable of assessing the device parameters with reference to I-V measurements. This thesis then characterizes the performance of the CIS based solar cells and modules in conjunction with other PV modules of different technologies such as crystalline Silicon modules by analyzing the light and dark I-V measurements of the devices. The light and dark I-V characteristics of PV devices were investigated and device parameters were extracted from the I-V data. The extraction and interpretation of these device parameters has a variety of important applications. It has been proven that the device parameters can be used for quality control during production and to provide insights into the operation of the PV devices, thereby improving the efficiency of the devices. The assessment comprises light I-V measurements at standard test conditions (STC), irradiance dependence measurements, parasitic series and shunt resistances measurements and the dark I-V measurements of the PV devices. The PV modules assessed comprise different technologies, namely, thin film based modules (CIS and a-Si) and multicrystalline Si and Edged-defined Film-fed Growth Si (EFG-Si). The dark I-V measurements results showed that the EFG-Si module has acceptable shunt (900 W) and series (0.4 W) resistances, thereby leading to the higher power output depicted from the light I-V measurements. The low quality cells of a-Si module were so low that the fill factor was the smallest (43%). In addition, the dark I-V measurements results revealed that CIS modules are less dependent to temperature at high voltages.

The increasing interest in non-fossil fuel based electricity generation has caused a prominent boost for the renewable energy sector, especially the field of Photovoltaics (PV) with one of the main reasons being the decrease in cost of PV electricity generation. However, over the last few years a saturation in the efficiency of solar cells have been reached leading into a renewed search for other means to further reduce the cost of electricity generation from photovoltaic sources. One of the technologies that has attracted a lot of attention is low concentration photovoltaics (LCPV). LCPV investigates an alternative strategy to replace costly semiconductor material with relatively cheap optical materials by developing a Low Concentration Photovoltaic (LCPV) module. A LCPV module is divided into three subsystems, namely, the optical, electrical and thermal subsystem. This study focussed on the design, construction and characterisation of an optical subsystem accompanied by a thorough investigation into the design of an electrical subsystem. A facetted parabolic concentrator using a vertical receiver was modelled and a first prototype was constructed having a geometric concentration factor of 6.00 X. Upon electrical characterisation of this first vertical receiver LCPV prototype a concentration of only 4.53 X (receiver 1) and 4.71 X (receiver 2) was obtained. The first vertical receiver LCPV prototype did not reach the expected concentration factor due to optical losses and misalignment of optical elements. The illumination profile obtained from the reflector element was investigated and an undesirable non-uniform illumination profile was discovered. A second vertical receiver LCPV prototype was constructed in an attempt to improve on the first prototype, this second vertical receiver prototype had a geometrical concentration factor of 5.80 X. The results indicated a much improved illumination profile, yet still containing a number of non-uniformities. The second vertical receiver LCPV module yielded an operational concentration factor of 5.34 X. From the preliminary results obtained it was discovered that under concentrated illumination there was a limitation on the maximum power that could be obtained from the receiver. Upon further investigation it was discovered that this limitation was due to the higher current levels under concentrated illumination accompanied by a high series resistance of the receiver. This lead to the construction of new PV receivers, where this limitation could be minimised. 3 cell, 4 cell, 6 cell and 8 cell string configurations were constructed and used for the electrical characterisation of the prototypes. Due to non-uniformity of the illumination profile obtained from the second LCPV prototype a third vertical receiver LCPV prototype was constructed. This vertical receiver design illustrated more uniformity in the obtained illumination distribution and had a geometrical concentration factor of 4.61 X, although under operation only 4.26 X could be obtained. It is important to note that the geometric concentration factor does not account for reflective losses of the reflective material. One of the main reasons for the difficulty in obtaining a uniform illumination profile with the vertical receiver design is that the facetted reflector element is far away from the PV receiver. This enhances the effect of the slightest misalignment of any of the optical elements. This large distance also increases the effect of lensing from each facet. These factors lead to the consideration of a second design, which would counteract these factors. A horizontal receiver LCPV module design implementing a facetted parabolic reflector was considered to counteract these effects. From a mathematical model a horizontal receiver LCPV prototype was constructed having a geometrical concentration factor 5.3 X. The optical characterisation of the illumination profile showed a much improved illumination profile, which was much more uniform than the previous illumination profiles obtained from the other LCPV prototypes. The uniformity of the illumination profile could be seen in results obtained from the electrical characterisation where the concentrator reached operational concentration factor of 5.01 X. The reliability of the third vertical receiver LCPV prototype and the horizontal receiver LCPV prototype as well as the receivers were investigated by placing each receiver under stressed operational conditions for 60 sun hours. I-V characteristics were obtained after every five sun hours to investigate any signs of degradation. After 60 sun hours none of the receiver displayed any signs of degradation or reduction in electrical performance.

High concentration photovoltaics (HCPV) promise a more efficient, higher power output than traditional photovoltaic modules. This is achieved by concentrating sunlight onto a small 1 cm2 triple junction (CTJ) InGaP/InGaAs/Ge cell by using precision optics. In order to achieve high performance, careful and informed design decisions must be made in the development of a HCPV module . This project investigated the design of a HCPV module and is divided into sections that concentrate on the optical design, thermal dissipation and electrical characterization of a concentration triple junction cell. The first HCPV module (Module I) design was based on the Sandia III Baseline Fresnel module which comprised of a Fresnel lens and truncated reflective secondary as the optical elements. The parameters of the CTJ cell in Module I increased with increased concentration. This included the short circuit current, open circuit voltage, power and efficiency. The best performance achieved was at 336 times operational concentration which produced 10.3 W per cell, a cell efficiency of 38.4 percent, and module efficiency of 24.2 percent Investigation of the optical subsystem revealed that the optics played a large role in the operation of the CTJ cell. Characterization of the optical elements showed a transmission loss of 15 percent of concentrated sunlight for the irradiance of which 66 percent of the loss occurred in wavelength region where the InGaP subcell is active. Characterization of the optical subsystem indicated regions of non-uniform irradiance and spectral intensity across the CTJ cell surface. The optical subsystem caused the InGaP subcell of the series monolithic connected CTJ cell to be current limiting. This was confirmed by the CTJ cell having the same short circuit current as the InGaP subcell. The performance of the CTJ cell decreased with an increase in operational temperature. A form of thermal dissipation was needed as 168 times more heat needs to be dissipated when compared to a flat plate photovoltaic module. The thermal dissipation was achieved by passive means with a heat sink which reduced the operational temperature of the CTJ cell from 50 oC to 21 oC above ambient. Cell damage was noted in Module I due to bubbles in the encapsulation epoxy bursting from a high, non-uniform intensity distribution. The development of the second module (Module II) employed a pre-monitoring criteria that characterized the CTJ cells and eliminated faulty cells from the system. These criteria included visual inspection of the cell, electroluminescence and one sun current-voltage (I-V) characteristic curves. Module II was designed as separate units which comprised of a Fresnel lens, refractive secondary, CTJ cell and heatsink. The optimal configuration between the two modules were compared. The CTJ cells in module II showed no form of degradation in the I-V characteristics and in the detected defects. The units under thermal and optical stress showed a progressive degradation. A feature in the I-V curve at V > Vmax was noted for the thermally stressed unit. This feature in the I-V curve may be attributed to the breakdown of the Ge subcell in the CTJ cell. Based on the results obtained from the two experimental HCPV modules, recommendations for an optimal HCPV module were made.

No description available.

Single crystal silicon solar cells for use under high concentration sunlight presently exhibit the highest conversion efficiencies. The following paper represents further work done to improve the efficiency of crystalline silicon solar cells through improved design. Design features and processing to address the loss mechanisms encountered in silicon solar cells are discussed. An improved solar cell structure has resulted from this work along with a practical processing sequence. Experiments were performed to show the practicality of pattern formation on the walls of the V-groove structures using conventional photolithography and masking techniques. Also, new beam processing techniques are discussed to improve processing.

No description available.

Photovoltaics is currently the fastest growing energy source in the world. Increasing the conversion efficiency towards the thermodynamic limits is the trend in research development. ???Third generation??? photovoltaics involves the investigation of ideas that may achieve this goal. Among the third generation concepts, the tandem cell structure has experimentally proven to have conversion efficiencies higher than a standard p-n junction solar cell. The alternative hot carrier solar cell design is one of the most elegant approaches. Energy selective contacts are crucial elements for the operation of hot carrier solar cells. Besides the carrier cooling problem within the absorber, carrier extraction has to be done through a narrow range of energy to minimise the interaction between the hot carriers in the absorber and the cooler carriers in the contacts. Resonant tunnelling through localised states, such as associated with atomic defects or with quantum dots in a dielectric matrix, may provide the required energy selectivity. A new model in studying the properties of resonant tunnelling through defects in an insulator is proposed and investigated. The resulting calculations are simple and useful in obtaining physical insight into the underlying tunneling processes. It is found that defects having a normal distribution along the tunnelling direction do not reduce the transmission coefficient dramatically, which increases the engineering prospects for fabrication. Silicon quantum dots embedded in an oxide provide the required deep energy confinement for room temperature resonant tunnelling operation. A single layer of silicon quantum dots in the centre of an oxide matrix are prepared by RF magnetron sputtering. The method has the advantage of controlling the dot size and the dot spatial position along the tunnelling direction. The presence of these crystalline silicon dots in the oxide is confirmed by high resolution transmission electron microscopy (HRTEM). A negative-differential resistance characteristic has been measured at room temperature on such structures fabricated on an N-type degenerated silicon wafer, a feature that can be explained by the desired resonant tunnelling process. A silicon quantum dot superlattice can be made by stacking multiple layers of silicon quantum dots. A model is proposed for calculating the band structure of such a silicon quantum dot superlattice, with the anisotropic silicon effective mass being taken into account. It suggests a high density of silicon quantum dots in a carbide matrix may provide the bandgap and required mobility for the top cell in the stacks for the recently proposed all-silicon tandem solar cell. The resonant tunnelling modeling and silicon quantum dot experiments developed have demonstrated new results relevant to energy selective contacts for hot carrier solar cells. Building on this work, the modeling study on silicon quantum dots may provide the theoretical basis for bandgap engineering of all-silicon tandem cells.

The wide spread adoption of solar photovoltaic cells is impeded by a number of factors, the primary one of which is the cost. The technology behind the most used cells today is based on bulk single crystalline silicon wafers. These wafers subsequently undergo numerous processesto produce a finished module capableo f delivering usable direct current electricity. Even with all these processes, the single biggest contributor to production costs is the starting wafer - estimated to account for some 50% of manufacturing costs. Removing these costs by replacing the wafer is the leading topic in solar cell research today. Glass is the most convenient starting point for replacing silicon wafers - it is benign, both from an environmental and manufacturing viewpoint, and is considerably less expensive than silicon wafers for a given quantity. As an amorphous material, glass is well suited to acting as a substrate for amorphous silicon layers used in low cost cells. Amorphous silicon cells suffer from stability issues and can degrade in performance substantially over the operational lifetime of the solar cell. To overcomethese problems the amorphous silicon can be replaced with crystalline silicon material. Generally, the deposition of suitable crystalline material occurs at a temperature in excess of the softening point of glass. So however useful glass is as a substrate it is incompatible with simple, low temperature formation of crystalline silicon using most techniques. There are two outstanding issues relating to the manufacture of thin film silicon solar cells that have been researched for this thesis. One is the deposition of silicon layers at a growth rate high enough to allow for a reasonable throughput of material. The second is the production of material suited to the task i.e. structurally and electrically. In this thesis the direct deposition of high quality polycrystalline silicon( near-single orientation with suitable electrical characteristics) using electron cyclotron resonance plasma enhanced chemical vapour deposition(E CR PECVD) onto glass is demonstrated. A new visualisation of the magnetic field used in E R PECVD has given an insight into the optimisation of the deposition process using this technique. By adjusting the magnetic field appropriately, an increase in growth rate for deposition of polycrystalline silicon of 2- 25 times that reported in the literature was found. In addition to the characterisation of the deposited material, the process parameters have been fully investigated by analysing the process plasma characteristics using a Langmuir probe. An amorphous incubation layer 1 micron thick is seen when the polycrystalline material is deposited directly on glass, however this layer can be substantially reduced by depositing on a thin layer of silicon (on the glass) which has been crystallised by excimer laser irradiation. This indicatesa possible direction in combining these two approaches in future manufacturing processes for the growth of low-temperature polycrystalline silicon layers on glass to form photovoltaic devices.

No description available.

No description available.