Usando-se a técnica do triodo de corona com corrente constante estudaram-se as propriedades ferroelétricas dos copolímeros P(VDF-TrFE) contendo diferentes teores de VDF. Descrevem-se as metodologias usadas na preparação de amostras por solução, a caracterização por raios X e DSC e a determinação do grau de cristalinidade. Apresentam-se o princípio de funcionamento da técnica do triodo de corona com corrente constante e a equivalência das curvas de potencial de superfície com as curvas de histerese. Mostra-se que a condução elétrica pode ser desprezada quando as medidas são realizadas em atmosfera com baixo valor de umidade. O valor do campo coercivo e da polarização remanente foram determinados a partir das curvas de subida do potencial de superfície, sendo o valor da polarização diretamente proporcional ao grau de cristalinidade das amostras. Esses resultados foram analisados supondo-se que os filmes de P(VDF-TrFE) podem ter duas fases cristalinas. Também são discutidos os modelos teóricos usados para interpretar as curvas de subida do potencial de superfície. / Ferroelectric properties of P(VDF-TrFE) copolymers having different contents of VDF were investigated using the corona triode with constant current. The casting procedure for the sample preparation, the characterization by X rays and DSC, and the determination of the degree of crystalinity were presented. The corona triode method allowing to charge samples with a Constant current and the equivalence between the potential buildup curves and hysteresis curves are presented. The coercive field and the remanent polarization were determined from the potential buildup curves and it was found that the polarization is linearly dependent on the degree of crystalinity. Results were discussed taking into account two different crystaline phases which could exists in P(VDF-TrFE). Also, it was presented theoretical models aiming to fit the potential buildup curves.

Usando-se a técnica do triodo de corona com corrente constante estudaram-se as propriedades ferroelétricas dos copolímeros P(VDF-TrFE) contendo diferentes teores de VDF. Descrevem-se as metodologias usadas na preparação de amostras por solução, a caracterização por raios X e DSC e a determinação do grau de cristalinidade. Apresentam-se o princípio de funcionamento da técnica do triodo de corona com corrente constante e a equivalência das curvas de potencial de superfície com as curvas de histerese. Mostra-se que a condução elétrica pode ser desprezada quando as medidas são realizadas em atmosfera com baixo valor de umidade. O valor do campo coercivo e da polarização remanente foram determinados a partir das curvas de subida do potencial de superfície, sendo o valor da polarização diretamente proporcional ao grau de cristalinidade das amostras. Esses resultados foram analisados supondo-se que os filmes de P(VDF-TrFE) podem ter duas fases cristalinas. Também são discutidos os modelos teóricos usados para interpretar as curvas de subida do potencial de superfície. / Ferroelectric properties of P(VDF-TrFE) copolymers having different contents of VDF were investigated using the corona triode with constant current. The casting procedure for the sample preparation, the characterization by X rays and DSC, and the determination of the degree of crystalinity were presented. The corona triode method allowing to charge samples with a Constant current and the equivalence between the potential buildup curves and hysteresis curves are presented. The coercive field and the remanent polarization were determined from the potential buildup curves and it was found that the polarization is linearly dependent on the degree of crystalinity. Results were discussed taking into account two different crystaline phases which could exists in P(VDF-TrFE). Also, it was presented theoretical models aiming to fit the potential buildup curves.

Organic thin film transistors (TFT) are an attractive option for low cost electronic applications and may be used for active matrix displays and for RFID applications. To extend the range of applications there is a need to develop and optimise the performance of non-volatile memory devices that are compatible with the solution-processing fabrication procedures used in plastic electronics. A possible candidate is an organic TFT incorporating the ferroelectric co-polymer poly(vinylidenefluoride-trifluoroethylene)(P(VDF-TrFE)) as the gate insulator. Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) as the gate insu-lator. The capacitance spectra of MIS devices, were measured under different biases, showing the effect of charge accumulation and depletion on the Maxwell-Wagner peak. The position and height of this peak clearly indicates the lack of stable depletion behavior and the decrease of mobility when increasing the depletion zone width, i.e. upon moving into the P3HT bulk. The lack of stable depletion was further investigated with capacitance-voltage (C-V) measurements. When the structure was driven into depletion, C-V plots showed a positive flat-band voltage shift, arising from the change in polarization state of the ferroelectric insulator. When biased into accumulation, the polarization was reversed. It is shown that the two polarization states are stable i.e. no depolarization occurs below the coercive field. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flat-band voltage expected during the sweep to accumulation voltages. The measured output characteristics of the studied ferroelectric-field-effect transistors confirmed the results of the C-V plots. Furthermore, the results indicated a trapping of electrons at the positively charged surfaces of the ferroelectrically polarized P(VDF-TrFE) crystallites near the insulator/semiconductor in-terface during the first poling cycles. The study of the MIS structure by means of thermally stimulated current (TSC) revealed further evidence for the stability of the polarization under depletion voltages. It was shown, that the lack of stable depletion behavior is caused by the compensation of the orientational polarization by fixed electrons at the interface and not by the depolarization of the insulator, as proposed in several publications. The above results suggest a performance improvement of non-volatile memory devices by the optimization of the interface. / Organische Transistoren sind besonders geeignet für die Herstellung verschiedener preisgünstiger, elektronischer Anwendungen, wie zum Beispiel Radio-Frequenz-Identifikations-Anhänger (RFID). Für die Erweiterung dieser Anwendung ist es notwendig die Funktion von organischen Speicherelementen weiter zu verbessern. Das ferroelektrische Polymer Poly(vinylidene-Fluoride-Trifluoroethylene) (P(VDF-TrFE)) eignet sich besonders gut als remanent polarisierbarer Isolator in Dünnschich-Speicherelementen. Um Schalt- und Polarisationsverhalten solcher Speicherelemente zu untersuchen, wurden P(VDF-TrFE)-Kondensatoren und Metall-Halbleiter-Isolator-Proben sowie ferroelektrische Feld-Effekt-Transistoren (Fe-FET) aus dem Halbleiter Poly(3-Hexylthiophene) (P3HT) und P(VDF-TrFE) hergestellt und dielektrisch untersucht. Die Charakterisierung der MIS-Strukturen mittels spannungsabhängiger Kapazitätsspektren machte deutlich, dass es nicht möglich ist, einen stabilen Verarmungzustand (Aus-Zustand) zu realisieren. Kapazität-Spannungs-Messungen (C-V) an MIS-Proben mit uni/bi-polaren Spannungszyklen zeigten eine stabile ferroelektrische Polarisation des P(VDF-TrFE)-Films. Eine Depolarisation des Isolators durch den Mangel an Minoritäts-Ladungsträgern konnte als Grund für die Instabilität des Verarmungs-Zustandes ausgeschlossen werden. Die C-V-Kurven wiesen vielmehr auf die Existenz fixierter, negativer Ladungsträger an der Grenzfläche hin. Zusammenfassend kann festgestellt werden: die Ursache der Ladungsträgerinstabilitäten in organischen ferroelektrischen Speicherelementen ist auf die Kompensation der ferroelektrischen Orientierungspolarisation durch "getrappte"(fixierte) negative Ladungsträger zurückzuführen. Dieses Ergebnis liefert nun eine Grundlage für die Optimierung der Isolator/Halbleiter-Grenzfläche mit dem Ziel, die Zahl der Fallenzustände zu minimieren. Auf diesem Wege könnte die Stabilität des Speicherzustandes in organischen Dünnschichtspeicherelementen deutlich verbessert werden.

Organometal halide perovskite absorbers such as methylammonium lead iodide chloride (CH3NH3PbI3-xClx), have emerged as an exciting new material family for photovoltaics due to its appealing features that include suitable direct bandgap with intense light absorbance, band gap tunability, ultra-fast charge carrier generation, slow electron-hole recombination rates, long electron and hole diffusion lengths, microsecond-long balanced carrier mobilities, and ambipolarity. The standard method of preparing CH3NH3PbI3-xClx perovskite precursors is a tedious process involving multiple synthesis steps and, the chemicals being used (hydroiodic acid and methylamine) are quite expensive. This work describes a novel, single-step, simple, and cost-effective solution approach to prepare CH3NH3PbI3-xClx thin films by the direct reaction of the commercially available CH3NH3Cl (or MACl) and PbI2. A detailed analysis of the structural and optical properties of CH3NH3PbI3-xClx thin films deposited by aerosol assisted chemical vapor deposition is presented. Optimum growth conditions have been identified. It is shown that the deposited thin films are highly crystalline with intense optical absorbance. Charge carrier separation of these thin films can be enhanced by establishing a local internal electric field that can reduce electron-hole recombination resulting in increased photo current. The intrinsic ferroelectricity in nanoparticles of Barium Titanate (BaTiO3 -BTO) embedded in the solar absorber can generate such an internal field. A hybrid structure of CH3NH3PbI3-xClx perovskite and ferroelectric BTO nanocomposite FTO/TiO2/CH3NH3PbI3-xClx: BTO/P3HT/Cu as a new type of photovoltaic device is investigated. Aerosol assisted chemical vapor deposition process that is scalable to large-scale manufacturing was used for the growth of the multilayer structure. TiO2 and P3HT with additives were used as ETL and HTL respectively. The growth process of the solar absorber layer includes the nebulization of a mixture of PbI2 and CH3NH3Cl perovskite precursors and BTO nanoparticles dissolved in DMF, and injection of the aerosol into the growth chamber and subsequent deposition on TiO2. While high percentage of BTO in the film increases the carrier separation, it also leads to reduced carrier generation. A model was developed to guide the optimum BTO nanoparticle concentration in the nanocomposite films. Characterization of perovskite solar cells indicated that ferroelectric polarization of BTO nanoparticles leads to the increase of the width of depletion regions in the perovskite layer hence the photo current was increased by one order of magnitude after poling the devices. The ferroelectric polarization of BTO nanoparticles within the perovskite solar absorber provides a new perspective for tailoring the working mechanism and photovoltaic performance of perovskite solar cells.