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Simulation study of deep sub-micron and nanoscale semiconductor transistorsXia, Tongsheng, Banerjee, Sanjay, Register, Leonard F., January 2005 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Supervisors: Sanjay K. Banerjee and Leonard F. Register. Vita. Includes bibliographical references.
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Scalable voltage reference for ultra deep submicron technologiesCave, Michael David. Davis, John H., January 2005 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Supervisor: John Davis. Vita. Includes bibliographical references.
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Zinc oxide MESFET transistors : a thesis submitted in partial fulfilment of the requirements of the dgree of Master of Engineering at the University of Canterbury /Turner, Gary Chandler. January 2009 (has links)
Thesis (M.E.)--University of Canterbury, 2009. / Typescript (photocopy). "November 2009." Includes bibliographical references (leaves 73-78). Also available via the World Wide Web.
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Silicon-on-sapphire MOSFET parameter extraction by small-signal measurement /Kong, Frederick. January 2002 (has links) (PDF)
Thesis (Ph.D.) - University of Queensland, 2003. / Includes bibliography.
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Process development, characterization, transient relaxation, and reliability study of HfO₂ and HfSi(x)O(y) gate oxide for 45nm technology and beyondAkbar, Mohammad Shahariar. Lee, Jack Chung-Yeung, January 2005 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Supervisor: Jack C. Lee. Vita. Includes bibliographical references.
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An analysis on the simulation of the leakage currents of independent double gate SOI MOSFET transistors a thesis presented to the faculty of the Graduate School, Tennessee Technological University /Moolamalla, Himaja Reddy, January 2009 (has links)
Thesis (M.S.)--Tennessee Technological University, 2009. / Title from title page screen (viewed on June 29, 2010). Bibliography: leaves 56-66.
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On the inversion and accumulation layer mobilities in N-channel trench DMOSFETS /Ng, Chun Wai. January 2005 (has links)
Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2005. / Includes bibliographical references. Also available in electronic version.
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Enhanced device performance of III-nitride HEMTs on sapphire substrates by MOCVD /Feng, Zhihong. January 2006 (has links)
Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2006. / Includes bibliographical references. Also available in electronic version.
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Three dimensional multi-gates devices and circuits fabrication, characterization, and modeling /Wu, Xu Sheng. January 2005 (has links)
Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2005. / Includes bibliographical references. Also available in electronic version.
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Linearity analysis of single and double-gate silicon-on-insulator metal-oxide-semiconductor-field-effect-transistorMa, Wei. January 2004 (has links)
Thesis (M.S.)--Ohio University, August, 2004. / Title from PDF t.p. Includes bibliographical references (p. 64-66)
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