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GaAs MESFET modeling and its applicationsHo, Wai. January 1993 (has links)
Thesis (M.S.)--Ohio University, November, 1993. / Title from PDF t.p.
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Computerized evaluation of parameters for HEMT, DC and microwave S parameter modelsChen, Lu. January 1995 (has links)
Thesis (M.S.)--Ohio University, November, 1995. / Title from PDF t.p.
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1/f AM and PM noise in a common source heterojunction field effect transistor amplifierCardon, Christopher Don. January 2007 (has links)
Thesis (M.S.)--University of Wyoming, 2007. / Title from PDF title page (viewed on July 28, 2008). Includes bibliographical references (p. 61-62).
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Buried-channel silicon carbide MOSFETS /Wagner, William E., January 1997 (has links)
Thesis (Ph. D.)--Lehigh University, 1997. / Includes vita. Bibliography: leaves 117-141.
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Investigation of electrical characteristics of III-V MOS devices with silicon interface passivation layerZhu, Feng, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.
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Surface and interface modification of alternative semiconductor materials for advanced transistorsJiang, Qi, January 2009 (has links)
Thesis (M.S.)--Rutgers University, 2009. / "Graduate Program in Chemistry and Chemical Biology." Includes bibliographical references (p. 29-31).
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Reliability of advanced dielectrics in gate oxide and device level packaging in MEMSRahman, Mohammad Shahriar. January 2009 (has links)
Thesis (Ph.D.)--University of Texas at Arlington, 2009.
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A study of electron transport in the inversion layer advanced silicon carbide (SiC) power MOSFETs /Zeng, Yu (Anne), January 2004 (has links)
Thesis (Ph. D.)--Lehigh University, 2004. / Includes vita. Includes bibliographical references (leaves 85-89).
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189 |
Hafnium dioxide gate dielectrics, metal gate electrodes, and phenomena occurring at their interfacesSchaeffer, James Kenyon, Ekerdt, John G. January 2004 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: John G. Ekerdt. Vita. Includes bibliographical references. Also available from UMI.
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Linearity analysis of single and double-gate silicon-on-insulator metal-oxide-semiconductor-field-effect-transistor /Ma, Wei. January 2004 (has links)
Thesis (M.S.)--Ohio University, August, 2004. / Includes bibliographical references (p. 64-66).
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