The motivation of this study is based on integrated passive filter dielectric thin films with thin layers. Reducing the area of integrated passive filter in a circuit by enhancing dielectric constant with same capacitance and thickness is the purpose which has been expected. To fabricate the thin film MIM structure capacitors, RF magnetron sputtering method was selected and BaNd2Ti5O14 composed materials treated as the target to grow the thin film dielectric layer in MIM structure capacitors. In this study the MIM structure capacitors were deposited on alumina substrates with Pt electrodes. In the thin film experiments, various operation parameters of sputtering deposition and post thermal process at different temperature were used to perform the desired thin film dielectric layers. In order to obtain the optimal performance of the dielectric thin films, ¡§Taguchi Method¡¨ was used as a experimental tool. The primary investigation focused on the electric characteristics of the thin film capacitors in this article. In the arranged ranges of the parameters, the optimal dielectric thin films were deposited under RF power 100W with deposition temperatures at 400¢J, chamber pressure is 10mtorr. The dielectric constant of deposited thin films is 39.2 at 1MHz, the dissipation factor is 1.38¢H at 10kHz, leakage current is 2.61X10-7A/cm2 at 5V operating voltage and breakdown electric field of 0.29MV/cm is observed. The crystalline structures of deposited thin films were characterized by XRD and found amorphous structure. Film roughness was measured by Atomic Force Microscope (AFM) with 0.263 nm.

Submitted by PPG Engenharia e Tecnologia de Materiais (engenharia.pg.materiais@pucrs.br) on 2018-10-11T17:16:47Z No. of bitstreams: 1 Disserta??o Rafael Bitello Silva.pdf: 3894988 bytes, checksum: cf3a5e12050e0f5509ae1930f1b89181 (MD5) / Approved for entry into archive by Sheila Dias (sheila.dias@pucrs.br) on 2018-10-17T12:16:39Z (GMT) No. of bitstreams: 1 Disserta??o Rafael Bitello Silva.pdf: 3894988 bytes, checksum: cf3a5e12050e0f5509ae1930f1b89181 (MD5) / Made available in DSpace on 2018-10-17T12:23:40Z (GMT). No. of bitstreams: 1 Disserta??o Rafael Bitello Silva.pdf: 3894988 bytes, checksum: cf3a5e12050e0f5509ae1930f1b89181 (MD5) Previous issue date: 2018-07-16 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior - CAPES / In this study the influence of different commercial curing agents of epoxy resin on film capacitors encapsulation was evaluated. A formulation with DGEBA epoxy resin was used with three different curing agent types: anhydride base, aliphatic amine base and polyamidoamine base. The curing reaction kinetic analysis of each epoxy system was performed by Osawa dynamic method by DSC according ASTM E968. The thermal properties of the epoxy systems were checked by TGA and DSC while the mechanical properties were measured by Shore D hardness and IZOD impact strength, also the a characterization by SEM was performed. The epoxy systems performance in capacitor was verified by qualification tests for film capacitors for automotive application based in AEC-Q200 D, as: exposure to the maximum capacitor operating temperture, exposure to thermal cycles and exposure to humidity. The capacitors were characterized by the capacitance variation while the effects in the epoxy systems were checked by their thermal and mechanical properties change. The systems based on aliphatic amine and polyamidoamine had lower activation energy and higher reaction velocity than the anhydride system. The performance of the capacitor against humidity was similar between the evaluated systems showing low loss of capacitance after the test, whereas against thermal cycles, even the aliphatic amine and polyamidoamine base systems were not affected by reduction of mechanical properties, they had their performance affected by cracks arising. Regarding the performance under exposure to the maximum operating temperature, the anhydride system presented the lowest capacitance loss in the capacitor, followed by the samples with polyamidoamine and aliphatic amine, respectively, which showed a significant reduction of the mechanical properties after prolonged exposure to the temperature of the test. / Neste estudo avaliou-se a influ?ncia de diferentes agentes de cura comerciais de resina ep?xi no encapsulamento de capacitores de filme. Foi utilizado uma formula??o de resina ep?xi DGEBA (diglicidil ?ter de bisfenol-A) com tr?s tipos diferentes de agente de cura: base anidrido, base amina alif?tica e base poliamidoamina. A an?lise da cin?tica da rea??o de cura de cada sistema ep?xi foi realizada pelo m?todo din?mico de Osawa, por DSC conforme ASTM E968. As propriedades t?rmicas dos sistemas ep?xi foram determinadas por TGA e DSC enquanto que as propriedades mec?nicas foram medidas atrav?s de dureza Shore D e resist?ncia ao impacto IZOD, al?m disto foi realizado caracteriza??o por MEV. O desempenho dos sistemas ep?xi no capacitor foi verificado pelos ensaios de qualifica??o de capacitores de filme para aplica??o automotiva baseados na norma AEC-Q200 D, sendo estes: exposi??o a temperatura m?xima do capacitor, exposi??o a ciclos t?rmicos e exposi??o a umidade. Os capacitores foram caracterizados pela varia??o de capacit?ncia enquanto que os efeitos nos sistemas ep?xi foram acompanhados pela altera??o em suas propriedades t?rmicas e mec?nicas. Os sistemas a base de amina alif?tica e poliamidoamina apresentaram menor energia de ativa??o e maior velocidade de rea??o que o sistema anidrido. O desempenho do capacitor frente a umidade foi similar entre os sistemas avaliados com baixa perda de capacit?ncia ap?s o ensaio, enquanto que frente aos ciclos t?rmicos, mesmo n?o apresentando redu??o de propriedades mec?nicas os sistemas base amina alif?tica e poliamidoamina tiveram seu desempenho afetado pelo aparecimento de trincas. Em rela??o ao desempenho sob exposi??o ? temperatura m?xima o sistema anidrido foi o que apresentou menor perda de capacit?ncia no capacitor, seguido das amostras com poliamidoamina e amina alif?tica, respectivamente, sendo que estas apresentaram redu??o significativa das propriedades mec?nicas ap?s exposi??o prolongada a temperatura do ensaio.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / This work presents an analysis and design of two Light Emitting Diode (LED) drivers topologies based on static switched converters aiming to avoid using electrolytic capacitors. Considering the low lifetime of electrolytic capacitors compared to LEDs, the topologies aims for reducing the storage capacitance and replaces it by a longer lifetime capacitor, increasing the overall system life span. A Proportional Integral controller is designed to reduce the output current ripple. Consequently, it reduces the bus voltage ripple which allows working with reduced bus capacitances. The input current harmonic distortion limit must be observed. The power factor correction stage is based on a Single Ended Primary Inductance Converter (SEPIC) operating under discontinuous conduction mode (MCD) for both topologies. The power control (PC) stage is performed by a Buck converter for the SEPIC-Buck topology and by a Ćuk converter for the SEPIC-Ćuk topology. These PC converters present output current source behavior, suitable for LED application. Two LED driver prototypes are implemented and the results present high efficiency and a 50% current ripple on the LED. Furthermore a simple dimming strategy is proposed and implemented. / Este trabalho apresenta uma análise e projeto para duas topologias de circuito de acionamento para Diodos Emissores de Luz (LED) utilizando conversores estáticos integrados com o objetivo de evitar a utilização de capacitores eletrolíticos. Considerando a baixa vida útil dos capacitores eletrolíticos, se comparada à dos LEDs, as topologias buscam reduzir a capacitância de barramento tornando possível a utilização de capacitores de maior vida útil, aumentando a vida útil do sistema como um todo. Um controlador Proporcional Integral é projetado para reduzir a ondulação na corrente de saída. Consequentemente, a ondulação da tensão de barramento é reduzida permitindo o uso de capacitâncias de barramento reduzidas. O limite da distorção harmônica da corrente de entrada deve ser observado. O estágio de correção do fator de potência é baseado no Conversor com Indutância Simples no Primário (SEPIC) operando no modo de condução descontínuo (MCD) para ambas as topologias. O estágio de controle de potência (PC) é realizado por um conversor Buck para a topologia SEPIC-Buck e por um conversor Ćuk para a topologia SEPIC-Ćuk. Os conversores do estágio PC apresentam característica de fonte de corrente na saída, conveniente para a utilização de LEDs. Dois protótipos para circuitos de acionamento para LEDs são implementados e os resultados apresentam alta eficiência e uma ondulação de 50% na corrente dos LEDs. Além disso, um circuito de controle da intensidade luminosa de bastante simplicidade é proposto e implementado.

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