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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
11

Návrhy řešení pro snížení fluktuace zaměstnanců ve vybraném pracovním týmu / Proposals of Solutions to Reduce Employee Fluctuation in a Selected Work Team

Podzimková, Hana January 2020 (has links)
This diploma thesis is focused on the fluctuation of employees of the finance department in a selected company. The first part is devoted to the issue of employee’s fluctuation and human resources management related to this topic. Theoretical knowledge is used in the next phase to analyze and evaluate the situation in the selected company. Finally, solutions will be proposed that will reduce fluctuations in society.
12

Information, theoretic and practical considerations of cellular DS-CDMA systems

Guan, Yong Liang January 1997 (has links)
No description available.
13

A relaying scheme for the protection of major transmission lines during fast power swings

Mechraoui, Ahmed January 1996 (has links)
No description available.
14

Target voltage response in reaction to laser radiation

Harkins, Richard M. 12 1900 (has links)
Approved for public release; distribution is unlimited / A five microsecond, 15 joule, pulsed C0₂ Laser was used to irradiate polished 2024 aluminum targets. The target voltage response (TVR) was measured with respect to the incident laser radiation and showed a pulse width on the order of 30 nanoseconds. The voltage was measured at values from 22 to 140 volts with resistances varying from one ohm to two mega-ohms. The TVR was correlated to the emission and blow-off of electrons from the target surface and the possible ignition of a Laser Supported Detonation wave. The TVR, laser pulse, and flash associated with target surface breakdown were time correlated and shown to happen within the first 170 nanoseconds of the five microsecond laser pulse. Currents up to 500 amps were observed when the resistance to ground was reduced to less than 1 ohm. Also, the magnitude of the TVR was shown to be a function of background gas pressure. / http://archive.org/details/targetvoltageres00hark / Lieutenant, United States Navy
15

Government stability in Estonia: Wishful Thinking or Reality? : An evaluation of Estonia's governments from the 1992 elections up to 2003 [including a comment of the cabinet of Juhan Parts up to February 2005]

Dahlmann, Olaf January 2005 (has links)
This article examines the multiple governments of independent Estonia since 1992 referring to their stability. Confronted with the immense problems of democratic transition, the multi-party governments of Estonia change comparatively often. Following the elections of March 2003 the ninth government since 1992 was formed. A detailed examination of government stability and the example of Estonia is accordingly warranted, given that the country is seen as the most successful Central Eastern European transition country in spite of its frequent changes of government. Furthermore, this article questions whether or not internal government stability can exist within a situation where the government changes frequently. What does stability of government mean and what are the varying multi-faceted depths of the term? Before analysing the term, it has to be clarified and defined. It is presumed that government stability is composed of multiple variables influencing one another. Data about the average tenure of a government is not very conclusive. Rather, the deeper political causes for governmental change need to be examined. Therefore, this article discusses the conceptual and theoretical basics of governmental stability first. Secondly, it discusses the Estonian situation in detail up to the elections of 2003, including a short review of the 9th government since independence. In the conclusion, the author explains whether or not the governments of Estonia are stable. In the appendix, the reader finds all election results and also a list of all previous ministers of Estonian governments (all data are as of July 2002).
16

Multi-dimensional Upwind Fluctuation Splitting Scheme with Mesh Adaption for Hypersonic Viscous Flow

Wood, William Alfred 30 November 2001 (has links)
A multi-dimensional upwind fluctuation splitting scheme is developed and implemented for two-dimensional and axisymmetric formulations of the Navier-Stokes equations on unstructured meshes. Key features of the scheme are the compact stencil, full upwinding, and non-linear discretization which allow for second-order accuracy with enforced positivity. Throughout, the fluctuation splitting scheme is compared to a current state-of-the-art finite volume approach, a second-order, dual mesh upwind flux difference splitting scheme (DMFDSFV), and is shown to produce more accurate results using fewer computer resources for a wide range of test cases. The scalar test cases include advected shear, circular advection, non-linear advection with coalescing shock and expansion fans, and advection-diffusion. For all scalar cases the fluctuation splitting scheme is more accurate, and the primary mechanism for the improved fluctuation splitting performance is shown to be the reduced production of artificial dissipation relative to DMFDSFV. The most significant scalar result is for combined advection-diffusion, where the present fluctuation splitting scheme is able to resolve the physical dissipation from the artificial dissipation on a much coarser mesh than DMFDSFV is able to, allowing order-of-magnitude reductions in solution time. Among the inviscid test cases the converging supersonic streams problem is notable in that the fluctuation splitting scheme exhibits superconvergent third-order spatial accuracy. For the inviscid cases of a supersonic diamond airfoil, supersonic slender cone, and incompressible circular bump the fluctuation splitting drag coefficient errors are typically half the DMFDSFV drag errors. However, for the incompressible inviscid sphere the fluctuation splitting drag error is larger than for DMFDSFV. A Blasius flat plate viscous validation case reveals a more accurate vertical-velocity profile for fluctuation splitting, and the reduced artificial dissipation production is shown relative to DMFDSFV. Remarkably the fluctuation splitting scheme shows grid converged skin friction coefficients with only five points in the boundary layer for this case. A viscous Mach 17.6 (perfect gas) cylinder case demonstrates solution monotonicity and heat transfer capability with the fluctuation splitting scheme. While fluctuation splitting is recommended over DMFDSFV, the difference in performance between the schemes is not so great as to obsolete DMFDSFV. The second half of the dissertation develops a local, compact, anisotropic unstructured mesh adaption scheme in conjunction with the multi-dimensional upwind solver, exhibiting a characteristic alignment behavior for scalar problems. This alignment behavior stands in contrast to the curvature clustering nature of the local, anisotropic unstructured adaption strategy based upon a posteriori error estimation that is used for comparison. The characteristic alignment is most pronounced for linear advection, with reduced improvement seen for the more complex non-linear advection and advection-diffusion cases. The adaption strategy is extended to the two-dimensional and axisymmetric Navier-Stokes equations of motion through the concept of fluctuation minimization. The system test case for the adaption strategy is a sting mounted capsule at Mach-10 wind tunnel conditions, considered in both two-dimensional and axisymmetric configurations. For this complex flowfield the adaption results are disappointing since feature alignment does not emerge from the local operations. Aggressive adaption is shown to result in a loss of robustness for the solver, particularly in the bow shock/stagnation point interaction region. Reducing the adaption strength maintains solution robustness but fails to produce significant improvement in the surface heat transfer predictions. / Ph. D.
17

Fluctuation Relations for Stochastic Systems far from Equilibrium

Dorosz, Sven 28 April 2010 (has links)
Fluctuations are of great importance in systems of small length and energy scales. Measuring the pulling of single molecules or the stationary fiow of mesospheres dragged through a viscous media enables the direct analysis of work and entropy distributions. These probability distributions are the result of a large number of repetitions of the same experiment. Due to the small scale of these experiments, the outcome can vary significantly from one realization to the next. Strong theoretical predictions exist, collectively called Fluctuation Theorems, that restrict the shape of these distributions due to an underlying time reversal symmetry of the microscopic dynamics. Fluctuation Theorems are the strongest existing statements on the entropy production of systems that are out of equilibrium. Being the most important ingredient for the Fluctuation Theorems, the probability distribution of the entropy change is itself of great interest. Using numerically exact methods we characterize entropy distributions for various stochastic reaction-diffusion systems that present different properties in their underlying dynamics. We investigate these systems in their steady states and in cases where time dependent forces act on them. This study allows us to clarify the connection between the microscopic rules and the resulting entropy production. The present work also adds to the discussion of the steady state properties of stationary probabilities and discusses a non-equilibrium current amplitude that allows us to quantify the distance from equilibrium. The presented results are part of a greater endeavor to find common rules that will eventually lead to a general understanding of non-equilibrium systems. / Ph. D.
18

Molecular mechanisms of the pressure-activation of Mrr, a Type IV restriction endonuclease, and induction of SOS response in Escherichia coli / Mécanismes moléculaires de l'activation par pression de Mrr, une enzyme de restriction de Type IV, et de l'induction d'une réponse SOS chez Escherichia coli

Bourges, Anaïs 28 September 2018 (has links)
La pression rencontrée par les organismes sur Terre varie de la pression atmosphérique à 110 MPa atteinte dans la fosse la plus profonde de l'océan. Même si Escherichia. coli n’est pas naturellement résistante à la pression, elle capable d'acquérir une résistance et même supporter un choc de pression de 2 GPa (~20 000 atm). L'une des réponses intéressantes d’E. coli à un choc sous létal de pression (100 MPa) est l'induction d'une réponse SOS dépendante de RecA due à des lésions double brins de l’ADN. La pression elle-même n'est pas capable de compromettre l'intégrité covalente de l'ADN. Des criblages ont permis d’isoler des souches d’E. coli résistantes à la pression qui révèlent qu'une endonucléase de restriction (ER) de type IV, Mrr, est le seul facteur responsable du clivage de l'ADN. Cette enzyme cible uniquement l'ADN méthylé et l’expression d’une MTase étrangère, M.HhaII, est également capable d'induire une réponse SOS dans des souches de E. coli en présence de Mrr. Ici, nous démontrons en utilisant des techniques de fluctuations d’intensité de fluorescence, in vivo et in vitro que Mrr est un présent sous la forme d’un tétramère dans les cellules non stressées. La pression est capable de dissocier Mrr en dimères actifs qui peuvent lier l'ADN et cliver à certains sites cryptiques. En revanche, la MTase HhaII favorise la forme dimeric de Mrr liée à l’ADN en raison de la méthylation de nombreux sites de haute affinité. Une analyse mutationnelle et un modèle d’homologie 3D de la protéine entière révèle la base structurelle probable du changement entre la forme tétramérique inactive à la forme dimérique active. Nous avons mis en pace un système permettant de faire de la microscopie sous pression (in vitro and in vivo) et nos résultats préliminaires ont confirmé notre modèle d’activation de Mrr. / The pressure encountered by organisms on Earth varies from the atmospheric pressure to 110 MPa as reached in the deepest trench of the ocean. Although Escherichia coli is not naturally resistant to high pressure, it is capable of acquiring pressure resistance and withstanding a pressure shock up to 2 GPa (~20,000 atm). When exposed to a sub-lethal pressure shock (100 MPa) E. coli induces a RecA-dependent SOS response due to DNA double strand breaks. Pressure itself is not capable of compromising the covalent integrity of the DNA. Instead, screens for pressure-resistance E. coli mutants have revealed that a Type IV restriction endonuclease, Mrr is the only factor responsible for DNA cleavage. This enzymes targets only methylated DNA and expression of a foreign methyltransferase, M.HhaII, is also capable of inducing an SOS response in strains harboring Mrr. Here, we demonstrate using fluorescence fluctuation techniques in vivo and in vitro that Mrr is present as a tetramer in unstressed cells and that pressure dissociates Mrr into active dimers that can bind DNA and cleave at some cryptic sites. In contrast, the M.HhaII MTase pulls the Mrr tetramer-dimer equilibrium to the dimer-bound DNA form probably due to the methylation of many high-affinity sites. Mutational analysis associated with a 3D homology model of the full-length protein reveals the probable structural basis for the switch from an inactive tetramer to an active dimer. We set up a system that allows microscopy experiments (in vitro and in vivo) under pressure and preliminary results have confirmed our model of Mrr activation.
19

Advanced TCAD Simulations and Characterization of Semiconductor Devices

Ewert, Tony January 2006 (has links)
<p>Today, micro- and nano-electronic devices are becoming more complex and advanced as the dimensions are shrinking. It is therefore a very challenging task to develop new device technologies with performance that can be predicted. This thesis focuses on advanced measurement techniques and TCAD simulations in order to characterize and understand the device physics of advanced semiconductor devices. </p><p>TCAD simulations were made on a novel MOSFET device with asymmetric source and drain structures. The results showed that there exists an optimum range of implantation doses where the device has a significantly higher figure-of-merit regarding speed and voltage capability, compared to a symmetric MOSFET. Furthermore, both 2D and 3D simulations were used to develop a resistive model of the substrate noise coupling. </p><p>Of particular interest to this thesis is the random dopant fluctuation (RDF). The result of RDF can be characterized using very advance and reliable measurement techniques. In the thesis an ultra-high precision parametric mismatch measurement system was designed and implemented. The best ever reported performance on short-term repeatability of the measurements was demonstrated. A new bipolar parametric mismatch phenomenon was also revealed using the measurement system.</p><p>A complete simulation platform, called SiSPET (Simulated Statistical Parameter Extraction Tool), was developed and integrated into the framework of a commercial TCAD environment. A special program for randomization of the doping was developed and proven to provide RDF effects in agreement measurement. The SiSPET system was used to investigate how different device models were able to take RDF effects into account. The RDF effects were translated in to parameter fluctuations using the developed extraction routines. It was shown that the basic MOSFET fluctuation model could be improved by including the field dependenent mobility. However, if a precise description of the fluctuations is required an advanced compact-model, such as MOS Model 11 should be used.</p>
20

Advanced TCAD Simulations and Characterization of Semiconductor Devices

Ewert, Tony January 2006 (has links)
Today, micro- and nano-electronic devices are becoming more complex and advanced as the dimensions are shrinking. It is therefore a very challenging task to develop new device technologies with performance that can be predicted. This thesis focuses on advanced measurement techniques and TCAD simulations in order to characterize and understand the device physics of advanced semiconductor devices. TCAD simulations were made on a novel MOSFET device with asymmetric source and drain structures. The results showed that there exists an optimum range of implantation doses where the device has a significantly higher figure-of-merit regarding speed and voltage capability, compared to a symmetric MOSFET. Furthermore, both 2D and 3D simulations were used to develop a resistive model of the substrate noise coupling. Of particular interest to this thesis is the random dopant fluctuation (RDF). The result of RDF can be characterized using very advance and reliable measurement techniques. In the thesis an ultra-high precision parametric mismatch measurement system was designed and implemented. The best ever reported performance on short-term repeatability of the measurements was demonstrated. A new bipolar parametric mismatch phenomenon was also revealed using the measurement system. A complete simulation platform, called SiSPET (Simulated Statistical Parameter Extraction Tool), was developed and integrated into the framework of a commercial TCAD environment. A special program for randomization of the doping was developed and proven to provide RDF effects in agreement measurement. The SiSPET system was used to investigate how different device models were able to take RDF effects into account. The RDF effects were translated in to parameter fluctuations using the developed extraction routines. It was shown that the basic MOSFET fluctuation model could be improved by including the field dependenent mobility. However, if a precise description of the fluctuations is required an advanced compact-model, such as MOS Model 11 should be used.

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