Graphene is a two-dimensional sp2 hybridized carbon lattice that is also the fundamental building block of graphite. Graphene has attracted significant interest recently due to its distinctive electrical, optical and mechanical properties. These properties have spurred research directed at modifying graphene for use in a variety of electronic, optoelectronic, and sensor technologies. However, before graphene can be used in products, it is necessary to find methods to tune, modify, grow and integrate graphene features while substantially boosting device performance and maintaining current processing compatibility and ease of integration with existing manufacturing infrastructure. This dissertation focuses on developing techniques for controllably doping the graphene layer through scalable, industry friendly and simple chemical doping; using self-assembled monolayer compounds, photo-acid and photo-base generators, polymers and metal-organic species. We have, in fact, demonstrated simple p-n junctions fabricated in this manner. Characteristic I-V curves indicate the superposition of two separate Dirac points from the p and n regions, confirming an energy separation of neutrality points within the complementary regions; Raman studies of these methods have shown that these processes result in extremely low defect levels in the graphene. Our simple methods for producing patterned doping profiles in graphene films and devices open up a variety of new possibilities for forming complex doping profiles in a simple manner in graphene. This work can enable rapid testing, such as controlled work function tuning, complex doping profiles and simple post-fabrication tuning, of concepts for graphene that may be useful in both interconnect and transparent conductor applications. In addition to graphene doping, we also investigated approaches to the synthesis of few-layer graphene flakes, since current techniques still produce inferior materials. Exfoliation of Graphene Sheets by an Electron Donor Surfactant was demonstrated to generate few-layers graphene flakes that rival the electrical quality of reduce graphene-oxide (rGO) flakes. Last but not least, Diels-Alder adducts on silica were explored as a controllable carbon precursor for pristine graphene; these allow for a rational direct-growth-of-graphene-on-surface reaction mediated by copper catalyst, without the use of flammable precursors, such as methane, that are used in current methods of chemical vapor deposition synthesis of graphene.

Necessity is the mother of all inventions. With Si hitting the speed bottleneck, newer materials to replace Si are being sought out. The ex-foliation based experiments on graphene by Geim and Novoselov at this point was perfect as many of its physical properties were fascinating from an electronics standpoint and hence it was very soon projected as a Si replacement for logic applications. In addition, graphene is also an attractive alternative to applications such as radio frequency devices, ultra-sensitive mass/chemical sensing, high-speed optoelectronics and transparent conductors for photo-voltaic applications. While the widespread success and utility of Si can be attributed to easy availability of source material and the ability to synthesize large areas of ultra high quality material, chemical vapor deposition (CVD) is the only available method to controllably produce large area monolayer graphene. CVD graphene is however polycrystalline and therefore defective. Hence, in order to promote graphene towards large-scale commercialization, it is necessary to be able to grow spatially homogeneous graphene with tailored defect densities. Transfer of atomic layers of graphene from the substrate on which it is grown, a Cu foil typically, on to an insulating substrate for electrical measurements is typically a major defect inducing step. Hence, a direct transfer-free fabrication of suspended device using graphene grown on thin films of electro-deposited Cu was attempted and successfully reported for the first time. Though it was shown that the fabrication process itself did not introduce any additional defects, the maximum obtained mobility on such fabricated structures was 5200 cm2/V·s. This value is lower than reported values in literature and thus improvements for electronic applications warranted further optimization. However, limitations on ability of electro-deposited Cu films (melting point of 1083 ◦C) to withstand high temperatures, 1000 ◦C, impeded further optimizations. Hence, growth on Cu foils was taken up. On Cu foil, we were able to identify the roles of the growth kinetics and system thermodynamics on the final quality of graphene. Specifically, by carefully altering the conditions during appropriate growth phases, we were able to obtain graphene films of tunable defect densities with motilities ranging from 200 - 20000 cm2/V·s. Using a host of characterization Techniques like electrical transport, Raman spectroscopic measurements, TEM imaging and water permeation studies, we find that the defect densities in graphene are largely concentrated at the boundaries, while the bulk of the graphene grain remains pristine. Further investigations revealed a thermodynamic correlation between the growth conditions and quality of the grain boundary in terms of defect density and structure. In addition to the influence of defects in graphene on charge mobility as seen before, their impact on the device contact resistance and charge transport hysteresis in graphene field effect transistors were also investigated. With a careful control on the film defect density, we were able to demonstrate devices with low contact resistance (1000 Ωµm ) and tunable hysteresis behavior. Finally, alternate substrates for graphene and its impact on the carrier densities were explored. Non-polar substrate SiO2 and polar substrates such AlN and AlGaN were chosen. On AlN, we obtained higher carrier mobility due to reduced phonon-electron scattering and a higher ’P’ doping behavior due to piezo-electric effects. Hence, to leverage the previous observation, novel FET device architecture with a HEMT based substrate using AlGaN was demonstrated.

No description available.

The objective of this research was to perform a systematic investigation of the unique structural and electrical properties of epitaxial graphene at the nanoscale. As the semiconductor industry faces increasing challenges in the production of integrated circuits, due to process complexity and scaling limitations, new materials research has come to the forefront of both science and engineering disciplines. Graphene, an atomically-thin sheet of carbon, was examined as a material which may replace or become integrated with silicon nanoelectronics. Specifically, this research was focused on epitaxial graphene produced on silicon carbide. This material system, as opposed to other types of graphene, holds great promise for large-scale manufacturing, and is therefore of wide interest to the academic and industrial community. In this work, high-quality epitaxial graphene production was optimized, followed by the process development necessary to fabricate epitaxial graphene nanoribbon transistors for electrical characterization. The structural and electrical transport properties of the nanoribbons were elucidated through a series of distinct experiments. First, the size-dependent conductivity of epitaxial graphene at the nanoscale was investigated. Next, the alleviation of the detrimental effects revealed during the size-dependent conductivity study was achieved through the selective functionalization of graphene with hydrogen. Finally, two techniques were developed to allow for the complementary doping of epitaxial graphene. All of the experiments presented herein reveal new and important aspects of epitaxial graphene at the nanoscale that must be considered if the material is to be adopted for use by the semiconductor industry.

Graphene, a 2D honeycomb lattice of sp² hybridized carbons, has attracted the attention of the scientific community not only for its interesting theoretical properties but also for its myriad of possible applications. The discovery of graphene led to the Nobel Prize in physics for 2010 to be awarded to Andrei Geim and Konstantin Novoselov. Since its discovery, many methods have been developed for the synthesis of this material. Two of those methods stand out for the growth of high quality and large area graphene sheets, namely, epitaxial growth from silicon carbide (SiC) and chemical vapor deposition (CVD). As it stands today, both methods make use of high concentrations of hydrogen (10-20%) in N₂ or Ar, high temperatures, and a vacuum system. Epitaxial growth from SiC in addition requires very expensive single crystal SiC wafers. In the case of CVD, organic molecules are used as the carbon source to grow graphene on a metal substrate. Although graphene has been grown on many metal substrates, the experiments highlighted here make use of copper as the metal substrate of choice since it offers the advantage of availability, low price, and, most importantly, because this substrate is self-limiting in other words, it mostly grows single layer graphene. Because the CVD method provides with a choice as for the carbon source to use, the following question arises: can a molecule, either commercially available or synthesized, be used as a carbon source that would allow for the synthesis of graphene under low temperatures, low concentrations of hydrogen and at atmospheric pressure? This dissertation focuses on the synthesis of graphene at lower temperatures by using carbon sources with characteristics that might make this possible. It also focuses on the use of forming gas (3% H₂ and 97% N₂ or Ar) in order to make the overall process a lot safer and cost effective. This dissertation contains two chapters on the synthesis of organic molecules of interest, and observations about their reactivity are included. CVD experiments were performed at atmospheric pressure, and under vacuum. In both instances forming gas was used as the annealing and carrier gas. Results from CVD at atmospheric pressure (CVDAP), using organic solvents as carbon sources, show that at 1000℃, low quality graphene was obtained. On the other hand, CVD experiments using a vacuum in the range of 25 mTorr to 1 Torr successfully produced good quality graphene. For graphene growth under vacuum conditions, commercially available and synthesized compounds were used. Attempts at growing graphene at 600℃ from the same carbon sources only formed amorphous carbon. These results point to the fact that good quality graphene can basically be grown from any carbonaceous material as long as the growth temperature is 1000℃ and the system is under vacuum. In addition to the synthesis of graphene at low temperatures, there is a great amount of interest on the synthesis of graphene nanoribbons (GNR’s) and, as with graphene, several approaches to their synthesis have been developed. One such method is the synthesis of GNRs encapsulated in carbon nanotubes. Experiments were conducted in which aluminosilicate nanotubes were used. These nanotubes provided for an easier interpretation of the Raman spectrum since the signals from the nanotubes do not interfere with those of the GNR’s as in the case when carbon nanotubes are used. The use of aluminosilicate nanotubes also allowed for the successful synthesis of GNR’s at temperatures as low as 200℃ when perylene was used as the carbon source.

Magister Scientiae - MSc / It is well known that a lead pencil is made of graphite, a naturally form of carbon, this is important but not very exciting. The exciting part is that graphite contains stacked layers of graphene and each and every layer is one atom thick. Scientists believed that these graphene layers could not be isolated from graphite because they were thought to be thermodynamically unstable on their own and taking them out from the parent graphite crystal will lead them to collapse and not forming a layer. The question arose, how thin one could make graphite. Two scientists from University of Manchester answered this question by peeling layers from a graphite crystal by using sticky tape and then rubbing them onto a silicon dioxide surface. They managed to isolate just one atom thick layer from graphite for the first time using a method called micromechanical cleavage or scotch tape. In this thesis chemical method also known as Hummers method has been used to fabricate graphene oxide (GO) and reduced graphene oxide. GO was synthesized through the oxidation of graphite to graphene oxide in the presence of concentrated sulphuric acid, hydrochloric acid and potassium permanganate. A strong reducing agent known as hydrazine hydrate has also been used to reduce GO to rGO by removing oxygen functional groups, but unfortunately not all oxygen functional groups have been removed, that is why the final product is named rGO. GO and rGO solutions were then deposited on silicon substrates separately. Several characterization techniques in this work have been used to investigate the optical properties, the morphology, crystallography and vibrational properties of GO and rGO.

Graphene, a two dimensional monolayer carbon sheet with the atoms tightly packed in a hexagonal lattice, has exhibited so many excellent properties, which enable graphene to break several material records with regard to carrier mobility, strength yield and thermal conductivity to name a few. Therefore, graphene has been placed as a potential candidate to allow truly next-generation material. Graphene is a zero band gap material, implying that an energy band gap around the Dirac point is supposed to be open to make graphene applicable as a semiconductor. Covalent bond graphene functionalization becomes an essential enabler to open the energy gap in graphene and extend graphene applications in electronics, while the densely packed hexagonal carbon atoms as well as the strong sp2 hybridization carbon-carbon bonds jointly result in a changeling topic of allowing graphene to be decorated with functional groups. Here in this thesis, different routes to realize graphene functionalizations are implemented by using physical and chemical ways. The physical functionalization methods are the ion/electron beam induced graphene fluorination as well as local defect insertion and the chemical ways correspond to the photochemistry techniques to approach hydrogenation and hydroxypropylation of graphene. Furthermore, to incorporate graphene into devices, the tuning of mechanical properties of graphene is desired. Towards this aim, the structure modification of graphene is employed to investigate the nanometer size-effect of crystalline size of graphene on the mechanical properties, namely Young’s modulus and surface energy. In the process of the graphene hydrogenation project, we discovered a high yield way to synthesis high quality graphene nanoscroll (GNS). Interestingly, the GNS shows superadhesion property through our atomic force microscopy measurements. This superadhesion is around 6-order stronger than van der Waals interaction and even higher than the hydrogen bonding enhanced and solid/liquid interfaces.

No description available.

Nanomaterials have been studied extensively in the last decade in the context of many applications such as polymer composites, energy harvesting systems, sensors, ‘transparent’-like materials, field-effect transistors (FETs), spintronic devices, gas sensors and biomedical applications. Graphene, a recently discovered two-dimensional form of carbon has captured the interest of material scientists, and physicists alike due to its excellent electrical, mechanical and thermal properties. Graphene has also kindled a tremendous interest among chemists and cell biologists to create cellular-electronic interface in the context of bio-electronic devices as it can enable fabricating devices with enhanced potential as compared to conventional bio-electronics. Graphene’s unique electronic properties and sizes comparable with biological structures involved in cellular communication makes it a promising nanostructure for establishing active interfaces with biological systems. In the recent past Field effect transistors (FETs) have been successfully fabricated using carbon nanotubes (CNTs) and nanowires (NWs) and electrical characterization of these FETs were done by interfacing them with various cell cultures, tissues and muscle cells. In these cases, exceptionally high surface area to thickness ratio of FETs provides high percentage of collectible signals and the cells that are used for the study are typically placed on the FET. In this thesis, we examine a different approach towards forming bio-electronic interfaces by covering the graphene oxide (reduced) sheets on the yeast cells. Graphene oxide and reduced graphene oxide sheets as two-dimensional electronic materials have very high charge carrier mobility, extremely high surface area to thickness ratio, mechanical modulus and elasticity. We report the synthesis of graphene oxide using wet chemistry method, reduction of graphene oxide using different reducing agents and electrical characterization of graphene oxide’s conductivity. Micro-meter sized graphene sheets are used to encapsulate the yeast cells with the aid of calcium and gold nanoparticle chains. We also demonstrate that graphene sheets form electrically conductive layers on the yeast cells and developing an electromechanical coupling with the cell. The mechanical and electrical characteristics of graphene sheets are highly dependent on the cell volume and structure which are in turn related to the environment around the cell. Furthermore, using the same principle of electromechanical coupling we study the dynamics of cell surface stresses and cell volume modification, which are of importance in processes such as cell growth, division, and response to physiological factors such as osmotic stresses.

This master thesis report evaluatesthe lubricating effect of graphene (G)and graphene oxide (GO). Thesematerials have been added, in particlecondition, in Ag-based slidingcontacts and lubricating greases. Thework focuses on the tribologicalevaluation of these materials,especially friction, wear and contactresistance analyses. The friction andwear behaviors of Ag-based contactscontaining of a wide concentrationrange of graphene and graphene oxideare tested against pure silver using atest load of 2 and 10 N at a constantspeed of 5 cm/s. It was revealed thatsmall amounts of G and GO are able tosignificantly reduce the frictioncoefficient and wear rate. Contactresistance measurements revealed thatresults similar to pure Ag can beachieved with G content up to 10vol%.Possible mechanisms, which maycontribute to this tribologicalbehavior are the Ag-C interactions andthe lubricating nature of graphene.Friction tests with G and GOcontaining lubricating greases showinconsistent results, and both greasesand corresponding test methods forevaluation require furtheroptimization. The overall, promising,tribological behavior of G and GOholds for the implementation invarious industrial applications. Thereis no doubt that these kinds ofmaterials can play an important rolein ABBs future work. This masterthesis report shows yet anotherapplication area for theseextraordinary materials.