Necessity is the mother of all inventions. With Si hitting the speed bottleneck, newer materials to replace Si are being sought out. The ex-foliation based experiments on graphene by Geim and Novoselov at this point was perfect as many of its physical properties were fascinating from an electronics standpoint and hence it was very soon projected as a Si replacement for logic applications. In addition, graphene is also an attractive alternative to applications such as radio frequency devices, ultra-sensitive mass/chemical sensing, high-speed optoelectronics and transparent conductors for photo-voltaic applications. While the widespread success and utility of Si can be attributed to easy availability of source material and the ability to synthesize large areas of ultra high quality material, chemical vapor deposition (CVD) is the only available method to controllably produce large area monolayer graphene. CVD graphene is however polycrystalline and therefore defective. Hence, in order to promote graphene towards large-scale commercialization, it is necessary to be able to grow spatially homogeneous graphene with tailored defect densities. Transfer of atomic layers of graphene from the substrate on which it is grown, a Cu foil typically, on to an insulating substrate for electrical measurements is typically a major defect inducing step. Hence, a direct transfer-free fabrication of suspended device using graphene grown on thin films of electro-deposited Cu was attempted and successfully reported for the first time. Though it was shown that the fabrication process itself did not introduce any additional defects, the maximum obtained mobility on such fabricated structures was 5200 cm2/V·s. This value is lower than reported values in literature and thus improvements for electronic applications warranted further optimization. However, limitations on ability of electro-deposited Cu films (melting point of 1083 ◦C) to withstand high temperatures, 1000 ◦C, impeded further optimizations. Hence, growth on Cu foils was taken up. On Cu foil, we were able to identify the roles of the growth kinetics and system thermodynamics on the final quality of graphene. Specifically, by carefully altering the conditions during appropriate growth phases, we were able to obtain graphene films of tunable defect densities with motilities ranging from 200 - 20000 cm2/V·s. Using a host of characterization Techniques like electrical transport, Raman spectroscopic measurements, TEM imaging and water permeation studies, we find that the defect densities in graphene are largely concentrated at the boundaries, while the bulk of the graphene grain remains pristine. Further investigations revealed a thermodynamic correlation between the growth conditions and quality of the grain boundary in terms of defect density and structure. In addition to the influence of defects in graphene on charge mobility as seen before, their impact on the device contact resistance and charge transport hysteresis in graphene field effect transistors were also investigated. With a careful control on the film defect density, we were able to demonstrate devices with low contact resistance (1000 Ωµm ) and tunable hysteresis behavior. Finally, alternate substrates for graphene and its impact on the carrier densities were explored. Non-polar substrate SiO2 and polar substrates such AlN and AlGaN were chosen. On AlN, we obtained higher carrier mobility due to reduced phonon-electron scattering and a higher ’P’ doping behavior due to piezo-electric effects. Hence, to leverage the previous observation, novel FET device architecture with a HEMT based substrate using AlGaN was demonstrated.

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This diploma thesis concerns itself with fabrication and characterization of Schottky solar cell on the graphene/silicon interface. Schottky solar cells were manufactured using a front collector electrode from gold, silver and carbon. On the graphene/silicon interface of the Schottky solar cell an interlayer of Al2O3 or SiO2. For the purpose of IV characterization of the manufactured Schottky solar cell a measuring apparatus was assembled.

La supraconductivité induite par effet de proximité dans du graphène CVD macroscopique décoré de nanoparticules d'étain (G/Sn) est le thème central de cette thèse. Dans ce manuscrit, deux projets expérimentaux sont présentés. Le premier de ces projets a consisté à développer et étudier un nouveau matériau manipulable et flexible au sein duquel les corrélations supraconductrices s'étendent à des échelles macroscopiques. Ce matériau est un film composite qui résulte de l'empilement de trois ingrédients originaux: un film fin de parylène d'une épaisseur de quelques micromètres, une monocouche de graphène de plusieurs centimètres carrés et un film discontinu métallique obtenu par démouillage naturel de l'étain en surface du graphène.Des mesures de transport à basses températures ont permis de mettre en évidence l'émergence d'un effet de supraconductivité induite à l'échelle macroscopique. Le courant critique de la transition supraconductrice des films composites a pu être contrôlé par une tension de grille avec une sensibilité de cent nanoampères par volt. Le comportement sous champ magnétique transverse des films composites est similaire à celui des supraconducteurs comportant des joints de grains et est caractérisé, en particulier sous faible champ magnétique, par une forte sensibilité de la transition supraconductrice. Une étude approfondie a enfin montré que le matériau hybride G/Sn est un système percolant bidimensionnel qui se comporte, à l'approche de la transition supraconductrice, comme une jonction unique de taille micrométrique.Dans le cadre du second projet, des cavités supraconductrices radiofréquences (RF) ont été développées. Des pistes G/Sn ont été intégrées à ces circuits supraconducteurs dans l'optique de créer des résonateurs dont la fréquence de résonance est contrôlable par une tension de grille. Un procédé d'intégration de pistes G/Sn conjointement à plusieurs cavités à partir d'un seul transfert (pleine plaque) de graphène a été mis au point. Des mesures en transmission dans des conditions cryogéniques ont été effectuées pour caractériser ces dispositifs hybrides et étudier leur comportement dans le domaine RF. / Superconducting proximity effect in macroscopic CVD-grown graphene decorated by tin nanoparticles is the central topic of this thesis. In this manuscript, two experimental projects are presented.The first of these projects consisted in developing and studying a new easy to handle and flexible material in which superconducting correlations extend over macroscopic scales. This material is a composite film made from the stacking of three original components: a few micrometers thin plastic film in parylene, a several centimeters squares layer of graphene, and a cluster of nanoparticles achieved by natural dewetting of tin on the graphene surface.Cryogenic transport measurements highlighted an induced superconductivity on the scale of the studied composite films pieces dimensions, of the order of the centimetre square. The superconducting critical current of the composite films showed gate tunability of about one hundred nanoamperes by volt. The behaviour of the composite films under a transverse magnetic field is similar to the one of granular superconductors and is characterised, especially under weak transverse magnetic field, by a high sensitivity of the superconducting transition. An in-depth study showed that the G/Sn hybrid material is a bidimensional percolating system that, when approaching the superconducting transition, behaves like a single mesoscopic Josephson junction.Within the framework of the second project, superconducting radiofrequency (RF) cavities have been developed. G/Sn patches have been integrated into these superconducting circuits in order to build gate tunable resonators. A process allowing to integrate G/Sn patches jointly to a series of several cavities from a single graphene transfer have been developed. Transmission measurements in cryogenic conditions have been performed to characterise these hybrid devices and to study their radiofrequency response.

[pt] Neste trabalho foi obtido um sensor de gás baseado no grafeno crescido por CVD. Amostras foram transferidas usando o polímero Poliuretano (PU) como camada de sacrifício, sendo confirmada a eficácia do método proposto quando comparado com aqueles existentes na literatura. Foi confirmada a qualidade do filme monocamada transferido mediante o controle dos defeitos gerados durante a transferência e a fabricação do dispositivo. Foram depositados sobre o grafeno contatos na forma de um circuito interdigitado e estudada a mudança da resistência do sensor construído para gases de NO2 e NH3. Espectroscopia Raman foi usada também neste trabalho para investigar o impacto da densidade dos defeitos no filme de grafeno na resposta do sensor de gás. O dispositivo proposto foi capaz de detectar baixas concentrações dos gases alvo testados. / [en] In this work a gas sensor based on graphene grown by CVD was obtained. Samples were transferred using Polyurethane (PU) polymer as the sacrificial layer, and the ecacy of the proposed method was confirmed when compared with those in the literature. The quality of the transferred monolayer film was confirmed by controlling the defects generated during the transfer and fabrication of the device. Contacts were deposited on top of the transferred film in the form of an interdigitated circuit and the sensor s resistance evolution was studied in the presence of NO2 and NH3. Raman spectroscopy was also used to investigate the impact of graphene defects density on the gas sensor response. The proposed device was able to detect low concentrations of the tested target gases.

This doctoral thesis is focused on the preparation of graphene layers by Chemical Vapor Deposition (CVD) and their utilization for fabrication and characterization of field effect transistors. The theoretical part of the thesis deals with different methods of graphene production and measurement of its transport properties. In the first part of the experimental section the growth of polycrystalline graphene and individual graphene crystals with sizes up to 300 m is investigated. Further, graphene layer was also grown on an atomically flat copper foils, which were fabricated in order to achieve the growth of graphene of higher quality. Subsequently, the transport properties of field effect transistors produced from the grown layers were measured. The last two chapters deal with a doping of graphene layer by gallium atoms and X-ray radiation. Whereas the deposition of gallium atoms on the graphene surface causes chemical doping of graphene layer by charge transfer, X-ray irradiation of graphene field effect transistors induces the ionization of positively charged defects in dielectrics, which electrostatically dope a graphene layer.

This thesis focuses on the study of graphene application in electronics and technology of preparation. In addition to the basic properties of graphene, the theoretical part of the work also describes the methods of its preparation, transmission, characterization and possibilities of application in electronics. The experimental part is divided into three chapters. The first chapter deals with the production of graphene by deposition from the gaseous phase, its transmission and application in the field of solar cells. The Poly(methyl methacrylate) polymer was first used for transfer of graphene, which was later replaced by Rosin due to less contamination of graphene at the end of the transmission process. The second chapter deals with the preparation of quantum dots by exfoliation in the liquid phase from graphite and its application in voltammetry. Voltammetry was utilized in this work to detect hydrogen peroxide using a gold electrode modified by quantum dots from graphene and other dichalcogens (MoS2, MoSe2, WS2, WSe2). In the last chapter, the influence of the substrate and the deposition conditions of graphene is studied by means of a plasma-reinforced phase-out of gas to growth, while the prepared graphene was characterized by imaging and spectroscopic methods. The entire experimental growth of graphene was managed and evaluated using a planned experiment.

This diploma thesis is focused on the applications and fabrication of graphene membrane from graphene prepared by the chemical vapor deposition. Theoretical part deals with transport properties of the graphene and multiple scattering processes limiting the charge carrier mobility in this material. Included is short review of graphene membrane applications. Experimental part provides fabrication process for achieving suspended graphene device by utilizing electron beam lithography, focused ion beam, chemical etching and patterning of graphene. Graphene membrane is characterized by transport properties measurement and compared to non-suspended graphene.

<div> <div> <div> <p>Organic-inorganic halide perovskite solar cells have increased efficiencies substantially (from 3% to > 22%), within a few years. However, these solar cells degrade very rapidly due to humidity and no longer are capable of converting photons into electrons. Methylammonium Lead Triiodide (CH3NH3PbI3 or MAPbI3) is the most common type of halide perovskite solar cell and is the crystal studied in this thesis. Graphene is an effective encapsulation method of MAPbI3 perovskite to reduce degradation, while also being advantageous because of its excellent optical and conductive properties. Using a PMMA transfer method graphene was chemical vapor depostion (CVD) grown graphene was transferred onto MAPbI3 and reduced the MAPbI3 degradation rate by over 400%. The PMMA transfer method in this study is scalable for roll-to- roll manufacturing with fewer cracks, impurites, and folds improving upon dry transfer methods. To characterize degradation a fluorescent microscope was used to capture photoluminescence data at initial creation of the samples up to 528 hours of 80% humidity exposure. Atomic force microscopy was used to characterize topographical changes during degradation. The study proves that CVD graphene is an effective encapsulation method for reducing degradation of MAPbI3 due to humidity and retained 95.3% of its initial PL intensity after 384 hours of 80% humidity exposure. Furthermore, after 216 hours of 80% humidity exposure CVD graphene encapsulated MAPbI3 retained 80.2% of its initial number of peaks, and only saw a 35.1% increase in surface height. Comparatively, pristine MAPbI3 only retained 16% of its initial number of peaks and saw a 159% increase in surface height. </p> </div> </div> </div>