The temperature fields and resulting stress fields have been calculated for a growing GaAs crystal produced by the LEC process. The calculations are based in a finite element numerical thermoelastic stress analysis. The calculated temperature fields have been compared to reported experimental measurements with good agreement. The stress fields have been used to calculate the resolved shear stresses, in the growing crystal, from which the dislocation density and distribution were determined. Using the model the effects of a range of growth and environmental parameters on the dislocation density and distribution were determined. Theses parameters include crystal length, crystal diameter, cone taper, boron oxide thickness, gas pressure, solid/liquid interface shape, vertical temperature gradients and others. The results show that the temperature distribution in the gas surrounding the crystal, and the boron oxide thickness, were critical factors in determining the dislocation density and distribution in the crystal. The crystal radius, crystal length and interface curvature also strongly influenced the dislocation configuration. After crystal growth, the dislocation density at the end of the crystal was strongly influenced by the cooling procedure adopted. The dislocation distribution on cross-sections of the crystal exhibited two-fold, four-fold and eight-fold symmetry depending on growth and cooling conditions and position in the crystal. / Applied Science, Faculty of / Mining Engineering, Keevil Institute of / Graduate

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Aluminum is an attractive metal for use as an anode in the cathodic protection of steels in seawater due to its low cost and high current capacity. Zinc is often used for its ability to readily corrode, but it has a low current capacity and it operates at very negative voltages, leading to hydrogen generation at the steel cathode, which may cause hydrogen embrittlement. Aluminum can operate at less-negative voltages, therefore reducing hydrogen generation, but it forms a passive oxide film, preventing the anode from corroding. Ga is added to aluminum in small amounts (0.1 wt%) to destabilize this oxide film and allow for active corrosion. The mechanism of how Ga activates Al is still not well-known, though there are prevailing proposals. A previous study noted a difference in behavior between Al-Ga master heats and the alloys that were later produced by re-melting them. This study is focused on characterizing the corrosion behavior of Al-0.1 wt% Ga in synthetic seawater, with samples from a master heat and two subsequent remelts. Galvanostatic, potentiostatic, and open-circuit tests were run, as well as galvanic coupling with 1123 steel. It was found that the remelted anodes behaved more consistently and maintained stable corrosion behavior for longer times than the master heat. X-ray Photoelectron Spectroscopy analysis showed elevated concentrations of Ga inside the oxide layer. The findings support the mechanism in the literature of discrete particles of Ga forming under the oxide film but do not support the mechanism of an amalgam layer formation. This project was funded by NACE International, Virginia Tech project number 457789. / Master of Science

Thesis (Ph.D.)--University of Western Australia, 2006.

We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system. / Singapore-MIT Alliance (SMA)