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31	Characterization and applications of low-temperature-grown MBE gallium arsenides Zhao, Pin 14 January 1994 (has links) Graduation date: 1994 Photoconductivity Gallium arsenide -- Optical properties
32	Above bandgap thermo-optic coefficient measurements for direct bandgap materials Akl, Ramsey. January 2005 (has links) Thesis (M.E.E.)--University of Delaware, 2005. / Principal faculty adviser: Keith Goossen, Dept. of Electrical & Computer Engineering. Includes bibliographical references.
33	A study of GaAs detectors for tracking in the ATLAS experiment Manolopoulos, Spyros January 1996 (has links) No description available. 530.41
34	Surface processes, morphology and reconstruction in InAs/GaAs heteroepitaxy Krzyzewski, Tomaz Jan January 2002 (has links) No description available. 546 Indium & gallium arsenide
35	GaAs optoelectronic logic devices. January 1994 (has links) She Tsz Chung William. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1994. / Includes bibliographical references (leaves 127-133). / Chapter 1. --- Introduction / Chapter 2. --- Review of Optical Logic --- p.11-28 / Chapter 2.1 --- All-Optical Approach / Chapter 2.2 --- Optoelectronic Approach / Chapter 2.3 --- Comparison of the Two Approaches / Chapter 3. --- High Speed Photodetectors applied in Optoelectronic Logic Design --- p.29-40 / Chapter 3.1 --- Photoconductive Switch / Chapter 3.2 --- Metal-Semiconductor-Metal Photodetector / Chapter 3.3 --- Design of Simple Logic Gates / Chapter 4. --- Device Fabrication and Characterization --- p.41-59 / Chapter 4.1 --- Design of Basic Structure / Chapter 4.2 --- Fabrication / Chapter 4.3 --- Mounting of Device / Chapter 4.4 --- Characterization / Chapter 5. --- Experimental Technique --- p.60-74 / Chapter 5.1 --- Measurement Procedure / Chapter 5.2 --- Optical Sources / Chapter 5.3 --- Optical Alignment / Chapter 5.4 --- Control of Optical Path Delay / Chapter 5.5 --- Measurement Automation / Chapter 6. --- Demonstration of Optoelectronic Logic Devices --- p.75-110 / Chapter 6.1 --- OR Gate / Chapter 6.2 --- Exclusive-OR Gate / Chapter 6.3 --- Exclusive-NOR Gate / Chapter 6.4 2 --- to 4 Decoder / Chapter 7. --- Discussion --- p.111-124 / Chapter 7.1 --- Improvements / Chapter 7.2 --- Extensions of this Project / Chapter 7.3 --- Prospects and Limitations of this Approach / Chapter 8. --- Conclusion --- p.125-126 / References --- p.127-133 / Appendix / Chapter I. --- List of Instruments --- p.134-136 / Chapter II. --- Properties of GaAs --- p.137 / Chapter III. --- List of Accepted and Submitted Publications during the Period of Study --- p.138 Optoelectronic devices Gallium arsenide semiconductors
36	Positron beam studies of the metal-GaAs (110) interface 凌志聰, Ling, Chi-chung, Francis. January 1994 (has links) published_or_final_version / Physics / Master / Master of Philosophy Positron annihilation. Gallium arsenide semiconductors.
37	Positron lifetime study of Zn-doped GaSb 雷美琪, Lui, Mei-ki, Pattie. January 2001 (has links) published_or_final_version / Physics / Master / Master of Philosophy Gallium arsenide semiconductors. Positron annihilation.
38	A 9-bit, pipelined GaAs analog-digital converter Breevoort, Cornelius Marius 05 1900 (has links) No description available. Integrated circuits Gallium arsenide semiconductors
39	Positron beam studies of the metal-GaAs (110) interface / Ling, Chi-chung, Francis. January 1994 (has links) Thesis (M. Phil.)--University of Hong Kong, 1994. / Includes bibliographical references (leaves 95-99).
40	Positron lifetime study of Zn-doped GaSb / Lui, Mei-ki, Pattie. January 2001 (has links) Thesis (M. Phil.)--University of Hong Kong, 2002. / Includes bibliographical references.

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