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1	Verschleißverhalten galvanisch belegter Schleifwerkzeuge bei der Bearbeitung von Hochleistungskeramik / Weber, Andreas. January 2008 (has links) Techn. Hochsch., Diss.--Aachen, 2007.
2	Anwendung von Zink-Nickel-Legierungen als Kadmiumersatz zum Korrosionsschutz hochfester Stähle Gysen, Bert. Unknown Date (has links) Universiẗat, Diss., 2000--Dortmund. / Dateiformat: PDF.
3	Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems Mueller, Steve, Waechtler, Thomas, Hofmann, Lutz, Tuchscherer, Andre, Mothes, Robert, Gordan, Ovidiu, Lehmann, Daniel, Haidu, Francisc, Ogiewa, Marcel, Gerlich, Lukas, Ding, Shao-Feng, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Zahn, Dietrich R.T., Qu, Xin-Ping 21 February 2012 (has links) (PDF) In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents. Atomlagenabscheidung ALD Ruthenium Ameisensäure Wasserstoff Reduktion ULSI Metallisierung Galvanik Spintronik Atomic Layer Deposition ALD Copper Oxide Ruthenium Formic Acid Hydrogen Reduction ULSI Interconnect Electrochemical deposition ECD Spintronics ddc:600 ddc:620 ddc:621 ddc:667 Atomlagenabscheidung Kupferoxid Ruthenium Metallisieren Galvanische Beschichtung Kupfer
4	Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems Mueller, Steve, Waechtler, Thomas, Hofmann, Lutz, Tuchscherer, Andre, Mothes, Robert, Gordan, Ovidiu, Lehmann, Daniel, Haidu, Francisc, Ogiewa, Marcel, Gerlich, Lukas, Ding, Shao-Feng, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Zahn, Dietrich R.T., Qu, Xin-Ping January 2011 (has links) In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner materials (e. g. Ru or Ni) as well as non-ferromagnetic spacer layers between ferromagnetic films in GMR sensor elements, like Ni or Co. The thermal CuxO ALD process is based on the Cu (I) β-diketonate precursor [(nBu3P)2Cu(acac)] and a mixture of water vapor and oxygen ("wet O2") as co-reactant at temperatures between 100 and 130 °C. Highly efficient conversions of the CuxO to metallic Cu films are realized by a vapor phase treatment with formic acid (HCOOH), especially on Ru substrates. Electrochemical deposition (ECD) experiments on Cu ALD seed / Ru liner stacks in typical interconnect patterns are showing nearly perfectly filling behavior. For improving the HCOOH reduction on arbitrary substrates, a catalytic amount of Ru was successful introduced into the CuxO films during the ALD with a precursor mixture of the Cu (I) β-diketonate and an organometallic Ru precursor. Furthermore, molecular and atomic hydrogen were studied as promising alternative reducing agents. info:eu-repo/classification/ddc/600 ddc:600 info:eu-repo/classification/ddc/620 ddc:620 info:eu-repo/classification/ddc/621 ddc:621 info:eu-repo/classification/ddc/667 ddc:667

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