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Analog programmable filters using floating-gate arraysKucic, Matthew R. 12 1900 (has links)
No description available.
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The mechanism of the flatband voltage shift by capping a thin layer of Me₂O₃ (Me=Gd, Y and Dy) on SiO₂ and HfO₂-based dielectricsZhang, Manhong, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.
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A study of gate dielectrics for wide-bandgap semiconductors GaN & SiC /Lin, Limin, January 2007 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2007. / Title proper from title frame. Also available in printed format.
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Theoretical study of HfO₂ as a gate material for CMOS devicesSharia, Onise, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.
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A study of the performance and reliability characteristics of HfO₂ MOSFET's with polysilicon gate electrodesOnishi, Katsunori. January 2002 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.
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III-V channel MOS devices with atomic-layer-deposited high-k gate dielectrics interface and carrier transport studies /Shahrjerdi, Davood, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.
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Metal-oxide-semiconductor devices based on epitaxial germanium layers grown selectively directly on silicon substrates by ultra-high-vacuum chemical vapor depositionDonnelly, Joseph Patrick, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2009. / Title from PDF title page (University of Texas Digital Repository, viewed on Sept. 11, 2009). Vita. Includes bibliographical references.
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Investigation of induced charge damage on self-aligned metal-gate MOS devices /Mulfinger, G. Robert. January 2006 (has links)
Thesis (M.S.)--Rochester Institute of Technology, 2006. / Typescript. Includes bibliographical references (leaves 89-90).
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A process variation tolerant self compensation sense amplifier designChoudhary, Aarti, January 2008 (has links)
Thesis (M.S.E.C.E. )--University of Massachusetts Amherst, 2008. / Includes bibliographical references (p. 84-88).
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Design of a Reconfigurable Pulsed Quad-Cell for Cellular-Automata-Based Conformal ComputingTan, Zhou January 2011 (has links)
This paper presents the design of a reconfigurable asynchronous unit, called the pulsed quad-cell (PQ-cell), for conformal computing. The conformal computing vision is to create computational materials that can conform to the physical and computational needs of an application. PQ-cells, like cellular automata, are assembled into arrays with nearest neighbor communication and are capable of general computation. They operate asynchronously to minimize power consumption and to allow sealing without the limitations imposed by a global clock. Cell operations are stimulated by pulses which use two wires to encode a data bit. Cells are individually reconfirgurable to perform logic, move and store information, and coordinate parallel activity. The PQ-cell design targets a 0.25 μm CMOS technology. Simulation results show that a PQ-cell, when pulsed at 1.3 GHz, consumes 16.9 pJ per operation. Examples of self-timed multi-cell structures include a 98 MHz ring oscillator and a 385 MHz pipeline.
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