This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of delta-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of "bottom-up" structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15nm thin SiO2 layer, which is enclosed by a 50nm poly-Si capping layer and the Si substrate, is irradiated with Si+ ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degree unattainable in common processes. A region of SiOx (x<2) - where x is a function of depth - is formed which is not stable. During annealing, the system relaxes towards equilibrium, i.e. phase separation (via spinodal decomposition and nucleation) sets in. Within a certain time window of annealing, the structure of the system matches with a structure similar to the multidot non-volatile memory device, the principal character of which is a 2D layer of Si nanoclusters of ~3nm in diameter which is embedded in a 3D SiO2 matrix at a distance of ~3nm from the Si substrate. The physical mechanisms of ion mixing of the two Si-SiOx interfaces and subsequent phase separation, which result in the desired sample structure, are elucidated from the viewpoint of computer simulation. In addition, experimental evidence is presented based on various methods, including TEM, RBS, and SIMS. Of particular importance is a novel method of Si nanocluster decoration which applies Ge as contrast enhancing element in TEM studies of tiny Si nanoclusters.

This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of delta-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of "bottom-up" structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15nm thin SiO2 layer, which is enclosed by a 50nm poly-Si capping layer and the Si substrate, is irradiated with Si+ ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degree unattainable in common processes. A region of SiOx (x<2) - where x is a function of depth - is formed which is not stable. During annealing, the system relaxes towards equilibrium, i.e. phase separation (via spinodal decomposition and nucleation) sets in. Within a certain time window of annealing, the structure of the system matches with a structure similar to the multidot non-volatile memory device, the principal character of which is a 2D layer of Si nanoclusters of ~3nm in diameter which is embedded in a 3D SiO2 matrix at a distance of ~3nm from the Si substrate. The physical mechanisms of ion mixing of the two Si-SiOx interfaces and subsequent phase separation, which result in the desired sample structure, are elucidated from the viewpoint of computer simulation. In addition, experimental evidence is presented based on various methods, including TEM, RBS, and SIMS. Of particular importance is a novel method of Si nanocluster decoration which applies Ge as contrast enhancing element in TEM studies of tiny Si nanoclusters.