This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of delta-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of "bottom-up" structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15nm thin SiO2 layer, which is enclosed by a 50nm poly-Si capping layer and the Si substrate, is irradiated with Si+ ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degree unattainable in common processes. A region of SiOx (x<2) - where x is a function of depth - is formed which is not stable. During annealing, the system relaxes towards equilibrium, i.e. phase separation (via spinodal decomposition and nucleation) sets in. Within a certain time window of annealing, the structure of the system matches with a structure similar to the multidot non-volatile memory device, the principal character of which is a 2D layer of Si nanoclusters of ~3nm in diameter which is embedded in a 3D SiO2 matrix at a distance of ~3nm from the Si substrate. The physical mechanisms of ion mixing of the two Si-SiOx interfaces and subsequent phase separation, which result in the desired sample structure, are elucidated from the viewpoint of computer simulation. In addition, experimental evidence is presented based on various methods, including TEM, RBS, and SIMS. Of particular importance is a novel method of Si nanocluster decoration which applies Ge as contrast enhancing element in TEM studies of tiny Si nanoclusters.

This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of delta-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of "bottom-up" structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15nm thin SiO2 layer, which is enclosed by a 50nm poly-Si capping layer and the Si substrate, is irradiated with Si+ ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degree unattainable in common processes. A region of SiOx (x<2) - where x is a function of depth - is formed which is not stable. During annealing, the system relaxes towards equilibrium, i.e. phase separation (via spinodal decomposition and nucleation) sets in. Within a certain time window of annealing, the structure of the system matches with a structure similar to the multidot non-volatile memory device, the principal character of which is a 2D layer of Si nanoclusters of ~3nm in diameter which is embedded in a 3D SiO2 matrix at a distance of ~3nm from the Si substrate. The physical mechanisms of ion mixing of the two Si-SiOx interfaces and subsequent phase separation, which result in the desired sample structure, are elucidated from the viewpoint of computer simulation. In addition, experimental evidence is presented based on various methods, including TEM, RBS, and SIMS. Of particular importance is a novel method of Si nanocluster decoration which applies Ge as contrast enhancing element in TEM studies of tiny Si nanoclusters.

Ce travail contribue à l’évaluation de la technique de génération de seconde harmonique induite par un champ électrique quasi statique, ou technique EFISHG, appliquée au domaine de la microélectronique. Une description du principe de la technique EFISHG, basé sur l’optique non linéaire, permet d’appréhender l’origine physique de cette méthode. Un état de l’art a permis d’identifier deux champs d’applications liés à la microélectronique : l’analyse de défaillance, via la mesure en temps de réelle des variations de champs électriques internes dans les circuits intégrés, et la fiabilité par l’étude du piégeage de charges à l’interface Si/SiO2 et de la dégradation dite de « Negative Bias Temperature Instability » ou NBTI. Ce manuscrit présente les différentes étapes qui ont permis l’élaboration d’un banc de test en vue de l’évaluation de l’applicabilité de la technique EFISHG à ces problématiques. Les résultats expérimentaux obtenus avec ce montage ont permis de mettre en avant les possibilités qu’offre la technique EFISHG à caractériser et à accélérer le vieillissement NBTI. / This work concerns the elaboration of an industrial method for Single Event Effect (SEE) sensitivity testing on integrated circuits. The concerned SEEs are those produced by heavy ions and are mainly Single Event Upset (SEU) and Single Event Latchup (SEL). The original test approach chosen in this study relies on the use of infrared laser pulses striking the backside of the tested device. Laser pulse and heavy ion interaction with semiconductor materials are described and a presentation of the particle accelerator test and some former laser test methods is also given. Advantages and drawbacks of those two techniques are discussed. The developed experimental setup uses a near infrared fiber coupled Neodyme/YAG pulsed laser. Its different elements are described. Using this tool to characterise the SEU sensitivity of several modern SRAMs has allowed to define a test methodology. Its efficiency is discussed and illustrated by different experimental results.