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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Growth and characterization of III-nitride semiconductors for high-efficient light-emitting diodes by metalorganic chemical vapor deposition

Kim, Jeomoh 27 August 2014 (has links)
The engineering of carrier dynamics in the MQW active region by modifying the p-type layers in the III-nitride based visible LEDs is described in this dissertation. It was found that the holes are preferentially injected into the QW adjacent to the p-InxGa1-xN layer with lower Indium mole fraction. Enhanced hole transport with increasing Indium mole fraction in the p-InxGa1-xN:Mg layer has been shown by analyzing the EL spectra. The improved hole transport and corresponding uniform distribution was achieved presumably by the potential barrier near the p-type layer and the MQW active region resulting in a modified kinetic energy of holes which creates a hole-transport-favorable environment in the MQW active region. At the same time, the limited hole injection due to the potential barrier for holes can be overcome under high injection conditions. The InAlN layers are widely used as an alternative high quality electron blocking layer in InGaN/GaN based visible LED structures. However, the Ga auto-incorporation of the InAlN layers has been recently reported during the growth of epitaxial layers by both MOCVD and MBE. The possible origins and a mechanism of Ga auto-incorporation of InAlN epitaxial layers were systematically investigated in this dissertation. It was found that the Ga-containing deposition on a wafer susceptor/carrier is the most dominant precursor for Ga auto-incorporation and the deposition on surrounding surfaces of quartz parts in a growth chamber is the other dominant source, while the effect of stainless-steel parts and interdiffusion of Ga atom from GaN underlayer are not critical. In addition, Mg or Cp2Mg in the growth chamber during InAl(Ga)N layer growth facilitates the auto-incorporation of Ga by modifying deposition conditions of GaN on the surrounding surfaces and the wafer susceptor/carrier. Based on experimental data of various cases, the Ga-containing deposition on any hot surfaces, which are also exposed to Indium precursor to form a liquid phase, is believed to be major origins of Ga auto-incorporation. In an effort to enhance the light extraction efficiency (LEE) in the LEDs, the direct patterning on the top surface of a LED structure, using laser interference ablation technique, has been studied in this dissertation. The 2-dimensional hexagonal lattice array of surface patterns was generated by direct irradiation of the laser source which is the interference of three laser beams onto the top p-GaN surface, without deterioration of electrical property of p-type layer and optical properties of MQW active region. The experimental results showed approximately 20 % improved LEE of the laser-patterned LED structure compared to the conventional LED structure without surface textures. Furthermore, the theoretical calculation using Monte-Carlo ray-tracing simulation confirmed the enhancement of LEE of the laser-patterned LED structure.
2

Crescimento e caracterizacao de monoscristais de LINBO IND. 3 e suas soluções solidas oxidas / Growth and characterization of single crystals of \'LI\'\' NB\'\' IND. 3 \'and its oxide solid solutions

Octaviano, Edson Salvador 26 August 1987 (has links)
A ênfase de todo o trabalho é relacionada com a preparação de soluções sólidas, concentrando-se na matriz de niobato de lítio, LiNbO3, puro e suas soluções sólidas óxidas, onde obtemos monocristais de LiNbO3 com Cr3+, Fe3+ e Mg2+. Os monocristais de LiNbO3são obtidos pelo método de Czochralski (fusão) e a caracterização de suas propriedades está voltada para a análise da perfeição estrutural, da distribuição de dopantes na matriz cristalina, da orientação dos domínios de dipolos ferroelétricos e o estudo do comportamento do coeficiente de segregação efetivo com os parâmetros de crescimento, com a cinética de adsorção e com o efeito de facetamento / The emphasis of all this work is related to the preparation of solid solutions, concentrating on lithium niobate single crystals, LiNbO3, pure and its oxide solid solutions, where we can obtain LiNbO3 single crystals doped with Cr3+, Fe3+ and Mg2+. The LiNbO3 single crystals are obtained by the Czochralski method (fusion) and the characterization of its properties is on the analysis of the structural perfection, of the distribution of the doping in the crystal matrix, of the orientation of the domains ferroelectrics dipoles and the study of the effective segregation coefficient behavior, with the growing parameters, with the adsorption kinetic and the facet effect
3

Nanowire Synthesis and Characterization: Erbium Chloride Silicate and Two Segment CdS-CdSe Nanowires and Belts

January 2012 (has links)
abstract: In this work, I worked on the synthesis and characterization of nanowires and belts, grown using different materials, in Chemical Vapor Deposition (CVD) system with catalytic growth method. Through this thesis, I utilized the Photoluminescence (PL), Secondary Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and X-ray diffraction (XRD) analyses to find out the properties of Erbium Chloride Silicate (ECS) and two segment CdS-CdSe samples. In the first part of my research, growth of very new material, Erbium Chloride Silicate (ECS), in form of core/shell Si/ECS and pure ECS nanowires, was demonstrated. This new material has very fascinating properties for new Si based photonic devices. The Erbium density in those nanowires is which is very high value compared to the other Erbium doped materials. It was shown that the luminescence peaks of ECS nanowires are very sharp and stronger than their counterparts. Furthermore, both PL and XRD peaks get sharper and stronger as growth temperature increases and this shows that crystalline quality of ECS nanowires gets better with higher temperature. In the second part, I did a very detail research for growing two segment axial nanowires or radial belts and report that the structure type mostly depends on the growth temperature. Since our final step is to create white light LEDs using single axial nanowires which have three different regions grown with distinct materials and give red, green and blue colors simultaneously, we worked on growing CdS-CdSe nanowires or belts for the first step of our aim. Those products were successfully grown and they gave two luminescence peaks with maximum 160 nm wavelength separation depending on the growth conditions. It was observed that products become more likely belt once the substrate temperature increases. Also, dominance between VLS and VS is very critical to determine the shape of the products and the substitution of CdS by CdSe is very effective; hence, CdSe growth time should be chosen accordingly. However, it was shown two segmented products can be synthesized by picking the right conditions and with very careful analyses. We also demonstrated that simultaneous two colors lasing from a single segmented belt structures is possible with strong enough-pumping-power. / Dissertation/Thesis / M.S. Electrical Engineering 2012
4

Crescimento e caracterizacao de monoscristais de LINBO IND. 3 e suas soluções solidas oxidas / Growth and characterization of single crystals of \'LI\'\' NB\'\' IND. 3 \'and its oxide solid solutions

Edson Salvador Octaviano 26 August 1987 (has links)
A ênfase de todo o trabalho é relacionada com a preparação de soluções sólidas, concentrando-se na matriz de niobato de lítio, LiNbO3, puro e suas soluções sólidas óxidas, onde obtemos monocristais de LiNbO3 com Cr3+, Fe3+ e Mg2+. Os monocristais de LiNbO3são obtidos pelo método de Czochralski (fusão) e a caracterização de suas propriedades está voltada para a análise da perfeição estrutural, da distribuição de dopantes na matriz cristalina, da orientação dos domínios de dipolos ferroelétricos e o estudo do comportamento do coeficiente de segregação efetivo com os parâmetros de crescimento, com a cinética de adsorção e com o efeito de facetamento / The emphasis of all this work is related to the preparation of solid solutions, concentrating on lithium niobate single crystals, LiNbO3, pure and its oxide solid solutions, where we can obtain LiNbO3 single crystals doped with Cr3+, Fe3+ and Mg2+. The LiNbO3 single crystals are obtained by the Czochralski method (fusion) and the characterization of its properties is on the analysis of the structural perfection, of the distribution of the doping in the crystal matrix, of the orientation of the domains ferroelectrics dipoles and the study of the effective segregation coefficient behavior, with the growing parameters, with the adsorption kinetic and the facet effect
5

Crystal Growth, Structure and Anisotropic Magnetic Properties of Quasi-2D Materials

Selter, Sebastian 15 June 2021 (has links)
In this work, the crystal growth as well as structural and magnetic investigations of several metal trichalcogenides compounds with a general formula M2X2Ch6 are presented. M stands for a main group metal or transition metal, X is an element of the IV or V main group and Ch is a chalcogen. In particular, these compounds are the phosphorus sulfides Fe2P2S6, Ni2P2S6 as well as intermediate compounds of the substitution regime (Fe1-xNix)2P2S6, the quarternary phosphorus sulfides CuCrP2S6 and AgCrP2S6 and the germanium tellurides Cr2Ge2Te6 and In2Ge2Te6. As members of the metal trichalcogenides, all these compounds have a van der Waals layered honeycomb structure in common. This layered structure in combination with their magnetic properties makes these compounds interesting candidate materials for the production of magnetic monolayers by exfoliation from bulk crystals. Crystals of the phosphorus sulfides were grown by the chemical vapor transport technique and, for the growth of the germanium tellurides, the self-flux growth technique was used. Crystals of all phases were extensively characterized regarding their morphology, chemical composition and homogeneity as well as regarding their crystal structure. The structural analysis, especially for Ni2P2S6, yields insight into details of the stacking order and disorder of the corresponding quasi-two-dimensional layers in the bulk. Regarding the magnetic properties, both Fe2P2S6 and Ni2P2S6 order antiferromagnetically but exhibit different magnetic anisotropies (i.e. Ising-like anisotropy for Fe2P2S6 and XYZ anisotropy for Ni2P2S6). In this context, it is surprising to find that compounds in the solid solution regime of (Fe1-xNix)2P2S6 up to x = 0.9 exhibit an anisotropic magnetic behavior that is comparable to Fe2P2S6 and, thus, indicative of Ising-like anisotropy. For CuCrP2S6 and AgCrP2S6, the ordering of the two different transition elements on the honeycomb sites yields more complex magnetic structures. The magnetic Cr3+ atoms in CuCrP2S6 order in a triangular arrangement and form an antiferromagnetic ground state with notable ferromagnetic interactions. AgCrP2S6 exhibits pronounced features of low dimensional magnetism resulting from the (quasi-)one-dimensional stripe-like arrangement of magnetic Cr3+ atoms and no onset of long-range magnetic order is unambiguously observed. Cr2Ge2Te6 exhibits ferromagnetic order and an anisotropic feature in the temperature dependence of the magnetization. Based on the magnetic phase diagrams for two orientations between the magnetic field and the crystallographic directions, the temperature dependence of the magnetocrystalline anisotropy constant as well as the critical exponents of the magnetic phase transition are extracted. Concluding from this, the magnetic interactions in Cr2Ge2Te6 are dominantly of two-dimensional nature and the anisotropy is uniaxial with the before mentioned anisotropic feature resulting from the interplay between magnetocrystalline anisotropy, magnetic field, and temperature. In2Ge2Te6 is diamagnetic as to be expected for a closed-shell system. Additional to the investigations on single crystals, the quasi-binary phase diagram of (Cu1-xAgx)CrP2S6 was investigated for regimes of solid solution behavior based on polycrystalline samples. Accordingly, isostructural substitution is most likely possible in the composition range of (Cu0.25Ag0.75)CrP2S6 to AgCrP2S6, potentially allowing to tune the magnetic interactions of the Cr sublattice indirectly by substitution on the Cu/Ag sublattice.:1. Introduction 1.1. M2X2Ch6 Class of Materials 1.2. Magnetism in Solid State Materials 1.2.1. Diamagnetism 1.2.2. Paramagnetism 1.2.3. Cooperative Magnetism 1.2.4. Magnetic Anisotropy 1.2.5. Magnetism in D < 3 1.2.6. Critical Exponents 2. Methods 2.1. Synthesis and Crystal Growth 2.1.1. Solid State Synthesis 2.1.2. Crystal Growth via the Liquid Phase 2.1.3. Crystal Growth via the Vapor Phase 2.2. X-ray Diffraction 2.2.1. Single Crystal X-ray Diffraction 2.2.2. Powder X-ray Diffraction 2.3. Scanning Electron Microscopy and Energy Dispersive X-ray Spectroscopy 2.3.1. Scanning Electron Microscopy 2.3.2. Energy Dispersive X-ray Spectroscopy 2.4. Magnetometry 2.5. Nuclear Magnetic Resonance Spectroscopy 2.6. Specific Heat Capacity 3. M2P2S6 3.1. Ni2P2S6 3.1.1. Crystal Growth 3.1.2. Characterization 3.1.3. Magnetic Properties 3.1.4. 31P-NMR Spectroscopy 3.1.5. Stacking (Dis-)Order in Ni2P2S6 3.2. (Fe1-xNix)2P2S6 3.2.1. Synthesis and Crystal Growth 3.2.2. Characterization 3.2.3. Evolution of Magnetic Properties 3.3. Summary and Outlook 4. M1+CrP2S6 4.1. CuCrP2S6 4.1.1. Crystal Growth 4.1.2. Characterization 4.1.3. Magnetic Properties 4.2. AgCrP2S6 4.2.1. Crystal Growth 4.2.2. Characterization 4.2.3. Magnetic Properties 4.3. Polycrystalline (Cu1-xAgx)CrP2S6 4.3.1. Synthesis 4.3.2. Phase Analysis 4.4. Summary and Outlook 5. M2(Ge,Si)2Te6 5.1. Cr2Ge2Te6 5.1.1. Crystal Growth 5.1.2. Characterization 5.1.3. Magnetic Properties 5.1.4. Analysis of the Critical Behavior 5.2. In2Ge2Te6 5.2.1. Crystal Growth 5.2.2. Characterization 5.2.3. Magnetic Properties 5.2.4. Specific Heat 5.3. Summary and Outlook 6. Conclusion Bibliography List of Publications Acknowledgements Eidesstattliche Erklärung A. Appendix A.1. Scanning Electron Microscopic Images A.1.1. (Fe1-xNix)2P2S6 A.2. scXRD A.2.1. (Fe1-xNix)2P2S6 / In dieser Arbeit werden die Kristallzüchtung sowie strukturelle und magnetische Untersuchungen an mehreren Metalltrichalkogenid-Verbindungen mit der allgemeinen Summenformel M2X2Ch6 vorgestellt. M steht für ein Hauptgruppen- oder Übergangsmetall, X ist ein Element der IV- oder V-Hauptgruppe und Ch ein Chalkogen. Insbesondere handelt es sich bei diesen Verbindungen um die Phosphorsulfide Fe2P2S6, Ni2P2S6 sowie um Verbindungen der Substitutionsreihe (Fe1-xNix)2P2S6, die quaternären Phosphorsulfide CuCrP2S6 und AgCrP2S6 sowie die Germaniumtelluride Cr2Ge2Te6 und In2Ge2Te6. Als Mitglieder der Metalltrichalkogenide haben alle diese Verbindungen eine van-der-Waals-Schichtstruktur mit Honigwabenmotiv gemein. Diese Schichtstruktur in Kombination mit ihren magnetischen Eigenschaften macht diese Verbindungen zu interessanten Kandidaten für die Herstellung von magnetischen Monolagen durch Exfoliation aus Volumenkristallen. Kristalle der Phosphorsulfide wurden mit der chemischen Dampfphasentransporttechnik gezüchtet und für die Züchtung der Germaniumtelluride wurde die Selbstflusstechnik verwendet. Die Kristalle aller Phasen wurden sowohl hinsichtlich ihrer Morphologie, chemischen Zusammensetzung und Homogenität als auch hinsichtlich ihrer Kristallstruktur umfassend charakterisiert. Die Strukturanalyse, insbesondere für Ni2P2S6, gibt Aufschluss über Details der Stapelordnung und -unordnung der entsprechenden quasizweidimensionalen Schichten im Volumen. Bezüglich der magnetischen Eigenschaften ordnen sowohl Fe2P2S6 als auch Ni2P2S6 antiferromagnetisch, zeigen aber unterschiedliche magnetische Anisotropien (d.h. Ising-artige Anisotropie für Fe2P2S6 und XYZ-Anisotropie für Ni2P2S6). In diesem Zusammenhang ist es überraschend, dass Verbindungen im Mischkristallregime von (Fe1-xNix)2P2S6 bis x = 0.9 ein anisotropes magnetisches Verhalten zeigen, das mit dem von Fe2P2S6 vergleichbar ist und daher auf Ising-artige Anisotropie hindeutet. Bei CuCrP2S6 und AgCrP2S6 führt die Anordnung der beiden unterschiedlichen Übergangselemente auf den Gitterplätzen der Wabenstruktur zu komplexeren magnetischen Strukturen. Die magnetischen Cr3+ Atome in CuCrP2S6 ordnen sich in einer Dreiecksanordnung an und bilden einen antiferromagnetischen Grundzustand mit ausgeprägten ferromagnetischen Wechselwirkungen. AgCrP2S6 weist deutliche Merkmale von niederdimensionalem Magnetismus auf, welche aus der (quasi-)eindimensionalen, streifenartigen Anordnung der magnetischen Cr3+ Atome resultieren, und das Einsetzen von langreichweitiger magnetischer Ordnung kann nicht eindeutig beobachtet werden. Cr2Ge2Te6 weist ferromagnetische Ordnung und einen anisotropen Verlauf der Temperaturabhängigkeit der Magnetisierung auf. Anhand von magnetischen Phasendiagrammen für zwei Orientierungen zwischen Magnetfeld und kristallographischen Richtungen wurden die Temperaturabhängigkeit der magnetokristallinen Anisotropiekonstante sowie die kritischen Exponenten des magnetischen Phasenübergangs extrahiert. Hieraus ergibt sich, dass die magnetischen Wechselwirkungen in Cr2Ge2Te6 überwiegend zweidimensionaler Natur sind und die Anisotropie uniaxial ist, wobei der zuvor erwähnte anisotrope Verlauf aus dem Zusammenspiel von magnetokristalliner Anisotropie, Magnetfeld und Temperatur resultiert. In2Ge2Te6 ist diamagnetisch, wie es für ein System mit geschlossener Schale zu erwarten ist. Zusätzlich zu den Untersuchungen an Einkristallen wurde das quasibinäre Phasendiagramm von (Cu1-xAgx)CrP2S6 anhand von polykristallinen Proben auf Bereiche mit Mischkristallverhalten hin untersucht. Folglich ist eine isostrukturelle Substitution höchstwahrscheinlich im Zusammensetzungsbereich von (Cu0.25Ag0.75)CrP2S6 bis AgCrP2S6 möglich, was es erlauben könnte, die magnetischen Wechselwirkungen des Cr-Untergitters indirekt durch Substitution auf dem Cu/Ag-Untergitter zu beeinflussen.:1. Introduction 1.1. M2X2Ch6 Class of Materials 1.2. Magnetism in Solid State Materials 1.2.1. Diamagnetism 1.2.2. Paramagnetism 1.2.3. Cooperative Magnetism 1.2.4. Magnetic Anisotropy 1.2.5. Magnetism in D < 3 1.2.6. Critical Exponents 2. Methods 2.1. Synthesis and Crystal Growth 2.1.1. Solid State Synthesis 2.1.2. Crystal Growth via the Liquid Phase 2.1.3. Crystal Growth via the Vapor Phase 2.2. X-ray Diffraction 2.2.1. Single Crystal X-ray Diffraction 2.2.2. Powder X-ray Diffraction 2.3. Scanning Electron Microscopy and Energy Dispersive X-ray Spectroscopy 2.3.1. Scanning Electron Microscopy 2.3.2. Energy Dispersive X-ray Spectroscopy 2.4. Magnetometry 2.5. Nuclear Magnetic Resonance Spectroscopy 2.6. Specific Heat Capacity 3. M2P2S6 3.1. Ni2P2S6 3.1.1. Crystal Growth 3.1.2. Characterization 3.1.3. Magnetic Properties 3.1.4. 31P-NMR Spectroscopy 3.1.5. Stacking (Dis-)Order in Ni2P2S6 3.2. (Fe1-xNix)2P2S6 3.2.1. Synthesis and Crystal Growth 3.2.2. Characterization 3.2.3. Evolution of Magnetic Properties 3.3. Summary and Outlook 4. M1+CrP2S6 4.1. CuCrP2S6 4.1.1. Crystal Growth 4.1.2. Characterization 4.1.3. Magnetic Properties 4.2. AgCrP2S6 4.2.1. Crystal Growth 4.2.2. Characterization 4.2.3. Magnetic Properties 4.3. Polycrystalline (Cu1-xAgx)CrP2S6 4.3.1. Synthesis 4.3.2. Phase Analysis 4.4. Summary and Outlook 5. M2(Ge,Si)2Te6 5.1. Cr2Ge2Te6 5.1.1. Crystal Growth 5.1.2. Characterization 5.1.3. Magnetic Properties 5.1.4. Analysis of the Critical Behavior 5.2. In2Ge2Te6 5.2.1. Crystal Growth 5.2.2. Characterization 5.2.3. Magnetic Properties 5.2.4. Specific Heat 5.3. Summary and Outlook 6. Conclusion Bibliography List of Publications Acknowledgements Eidesstattliche Erklärung A. Appendix A.1. Scanning Electron Microscopic Images A.1.1. (Fe1-xNix)2P2S6 A.2. scXRD A.2.1. (Fe1-xNix)2P2S6

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