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Theoretical study of HfO₂ as a gate material for CMOS devicesSharia, Onise, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.
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Highly deformed rotational bands and normal deformed high spin structures in ¹⁷¹HF and ¹⁷²HFZhang, Yanci, January 2008 (has links)
Thesis (Ph.D.)--Mississippi State University. Department of Physics and Astronomy. / Title from title screen. Includes bibliographical references.
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A study of the performance and reliability characteristics of HfO₂ MOSFET's with polysilicon gate electrodesOnishi, Katsunori. January 2002 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.
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Measurement of neutron activated short-lived nuclides using a pneumatic transfer systemPaas, Alfred O. Sullivan, Robert D. January 1962 (has links) (PDF)
Thesis (M.S. in Physics)--Naval Postgraduate School, March 2010. / Thesis Advisor(s): Rodeback, G. W. "January 1962." Description based on title screen as viewed on June 2, 2010. DTIC Descriptor(s): Research Reactors, Hafnium, Half Life, Pneumatic Equipment, Measuring Instruments, Reactor Cores, Shielding, Detection, Gamma Emission, Computer Programming, Radioactive Isotopes, Radioactive Decay, Mixtures, Scintillation Counters, Isotopes, Least Squares Method. DTIC Identifier(s): AGN-201 Reactors, Fortran. Includes bibliographical references (p. 25). Also available in print.
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High-spin triaxial strongly deformed structures and quasiparticle alignments in 168HfYadav, Ram Babu, January 2009 (has links)
Thesis (Ph.D.)--Mississippi State University. Department of Physics & Astronomy. / Title from title screen. Includes bibliographical references.
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Investigation of sputtered hafnium oxides for gate dielectric applications in integrated circuits /Jaeger, Daniel J. January 2006 (has links)
Thesis (M.S.)--Rochester Institute of Technology, 2006. / Typescript. Includes bibliographical references (leaves 145-146).
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Electrical and material characteristics of hafnium-based multi-metal high-k gate dielectrics for future scaled CMOS technology physics, reliability, and process development /Rhee, Se Jong, January 1900 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Vita. Includes bibliographical references.
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Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technologyKim, Young-Hee, Lee, Jack Chung-Yeung, January 2004 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Jack C. Lee. Vita. Includes bibliographical references.
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Selective silicon and germanium nanoparticle deposition on amorphous surfacesCoffee, Shawn Stephen, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.
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Étude microstructurale de la stabilité thermique de phases métastables dans des systèmes à base de ZrO, HfO et d'oxydes de terres rares : application aux barrières thermiques /Ibégazène, Hocine. January 1996 (has links)
Th. doct.--Paris 11, 1995. / Autre forme du titre : "Étude de la métastabilité d'oxydes ultraréfractaires" Bibliogr. p. 187-195. Résumé en français et en anglais. L'ouvrage porte par erreur : ISSN 0078-3780.
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