Amorphous metals have been studied extensively recently and possess many interesting electronic properties. This thesis aims to examine some of these, with particular reference to the conductivity and Hall effect in such alloys. In an extensive review of recent theoretical and experimental work, the author attempts to examine (i) whether the data can be explained using the 'semi-classical' theory of transport, with the inbuilt assumption that the electron loses memory of all collisions before that immediately preceding the time of observation, or whether 'quantum interference' and 'electron correlation phenomena must be considered, and (ii) whether it is possible to provide a simple physical picture of such quantum interference phenomena which leads to results commensurate with those of formal theories and with experimental results. A good probe of electron correlation effects is the temperature dependence of the Hall coefficient. In conjunction with the conductivity a good idea of the importance of such phenomena can be obtained. The succeeding chapters discuss the rebuilding of a radio frequency sputtering system suitable for production of thin amorphous metal films, and the methods used in making high precision measurements of the properties mentioned, between 1.25 and 300K. A results chapter reports data taken on the Cu-Ti and Ni-Zr systems, which were chosen as representative transition metal - transition metal alloy systems showing a wide range of behaviour. Extensive analysis of these data is undertaken, in terms of quantum interference and other theories. The effects of clustering of magnetic centres, and of superconductivity, in Ni-Zr films, is discussed. It is shown that the results are in broad agreement with these theories and first evidence is presented that electron correlation phenomena may be affected by inelastic electron scattering at intermediate temperatures. Confirmation of a simple relationship between the change in Hall coefficient and of conductivity due to electron correlation, predicted by theory, is provided. A short conclusion makes suggestions for future experimental work.

No description available.

by So Koon Chong. / Bibliography: leaves 86-88 / Thesis (M.Ph.)--Chinese University of Hong Kong, 1984

The development of the conductivity coefficients is reviewed for both highly degenerate metals, having an energy dependent relaxation time, and semiconductors, obeying Boltzmann statistics and having a relaxation time varying as the energy to the λ power.

We discussed the electronic properties in AlxGa1-xN/GaN heterostructures. There are six different samples of AlxGa1-xN/GaN we prepared for this experiment, three of them are undoped AlxGa1-xN/GaN with different x values which is 0.17, 0.29 and 0.33, respectively. The others are Fe-doped AlxGa1-xN/GaN which the x value is 0.18, 0.19 and 0.21 for each sample. Comparing these two types¡¦ materials¡¦ results, we tried to confirm the impurity¡¦s characteristic in our samples. From the Hall measurement results, carrier concentration of Fe-doped AlxGa1-xN/GaN were pretty lower than undoped AlxGa1-xN/GaN, and the mobility at 4.2 K are almost two times to undoped AlxGa1-xN/GaN. At the same time, we performed Shubnikov-de Hass measurement, and two subbands of the 2DEG were populated on the samples for x value is 0.29 and 0.33. The energy separation for first two subbands is 109meV. We also observed obvious beat pattern in the SdH oscillations due to the spin splitting on the samples and the greatest spin-splitting energy is 5.96meV in our measurement. Furthermore, we observed evident PPC effect on the samples of Fe-doped AlxGa1-xN/GaN, the carrier concentrations increased at least 23% after illumination. Meanwhile the samples of undoped AlxGa1-xN/GaN can just produce 10.7% increment at most.

Thesis (M.S.)--University of Wisconsin--Madison, 1966. / Typescript. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references (leaves 40-41)

The quantum Hall effect occurs when a conductor carrying a current is placed in a perpendicular magnetic field. If certain conditions are met, such as strong magnetic field and low temperature, the resistivity becomes quantised, taking values of integer or fractional multiples of h/e2. By analysing the movement of electrons in a magnetic field classically and quantum mechanically information about the integer quantum Hall effect and the fractional quantum Hall effect can be gathered, using the two different gauge potentials of Landau gauge and Symmetric gauge. Resistance Metrology is one field of study that the quantum Hall effect has greatly impacted by providing a way to universally maintain the ohm, with significantly less uncertainty than previously. / Den kvantmekaniska hall-effekten uppstår när en strömbärande ledare placeras i ett vinkelrätt magnetfält. Om vissa villkor är uppfyllda, såsom starkt magnetfält och låg temperatur, blir resistiviteten kvantiserad. Given av heltal (integer) eller fraktions-(fractional) multiplar av h/e2. Genom att analysera elektroners rörelse i ett magnetfält klassiskt och kvantmekaniskt fås information om Hall-effekterna; integer quantum Hall effect och fractional quantum Hall effect, med hjälp av de två gauge potentialerna Landau gauge och Symmetrisk gauge. Resistansmetrologi är ett forskningsområde som kvant Hall-effekten har starkt påverkat genom att tillhandahålla ett sätt att universellt upprätthålla ohm-enheten med betydligt mindre osäkerhet än tidigare.

published_or_final_version / Physics / Master / Master of Science

published_or_final_version / Physics / Master / Master of Science

published_or_final_version / Physics / Master / Master of Philosophy